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公开(公告)号:TW201603933A
公开(公告)日:2016-02-01
申请号:TW104117827
申请日:2015-06-02
Applicant: 賀利氏德國有限責任兩合公司 , HERAEUS DEUTSCHLAND GMBH & CO. KG
Inventor: 沙佛 麥克 , 史密特 渥夫岡 , SCHMITT, WOLFGANG , 希爾曼 亞伯特 , HEILMANN, ALBERT , 納崔那 偵斯 , NACHREINER, JENS
CPC classification number: B22F1/0062 , B22F7/064 , B22F2001/0066 , B23K35/025 , B23K35/34 , B23K35/3602 , B23K35/3618 , B23K35/365 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/2731 , H01L2224/27312 , H01L2224/2732 , H01L2224/27422 , H01L2224/29294 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29369 , H01L2224/29386 , H01L2224/2939 , H01L2224/2949 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/83055 , H01L2224/83075 , H01L2224/83192 , H01L2224/83203 , H01L2224/83211 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83464 , H01L2224/83469 , H01L2224/8384 , H01L2924/0541 , H01L2924/13055 , H01L2924/00 , H01L2924/00014 , H01L2924/01013 , H01L2924/01028 , H01L2924/01108 , H01L2924/01047 , H01L2924/01029 , H01L2924/01079 , H01L2924/0549 , H01L2924/0544 , H01L2924/01006 , H01L2924/00012
Abstract: 本發明係關於一種金屬膠,其包含(A)75至90重量%之至少一種呈包含含有至少一種有機化合物之塗層之顆粒形式存在之金屬、及(B)6至20重量%之有機溶劑,其中該金屬膠進一步包含(C)2至10重量%之至少一種由式(NHR1R2R3)+(BF4)-表示之四氟硼酸銨,藉此,殘基R1、R2、及R3係相同或不同的選自H及各具有12個C原子之烴基之殘基。
Abstract in simplified Chinese: 本发明系关于一种金属胶,其包含(A)75至90重量%之至少一种呈包含含有至少一种有机化合物之涂层之颗粒形式存在之金属、及(B)6至20重量%之有机溶剂,其中该金属胶进一步包含(C)2至10重量%之至少一种由式(NHR1R2R3)+(BF4)-表示之四氟硼酸铵,借此,残基R1、R2、及R3系相同或不同的选自H及各具有12个C原子之烃基之残基。
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公开(公告)号:TW201517181A
公开(公告)日:2015-05-01
申请号:TW103133087
申请日:2014-09-24
Applicant: 日東電工股份有限公司 , NITTO DENKO CORPORATION
Inventor: 福井章洋 , FUKUI, AKIHIRO , 高本尚英 , TAKAMOTO, NAOHIDE , 花園博行 , HANAZONO, HIROYUKI
CPC classification number: H01L21/563 , H01L21/4853 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2021/60135 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/16225 , H01L2224/16227 , H01L2224/27003 , H01L2224/271 , H01L2224/27436 , H01L2224/2919 , H01L2224/29191 , H01L2224/2929 , H01L2224/29291 , H01L2224/293 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29387 , H01L2224/29393 , H01L2224/29398 , H01L2224/32225 , H01L2224/73104 , H01L2224/81011 , H01L2224/81193 , H01L2224/81815 , H01L2224/83191 , H01L2224/83203 , H01L2224/83211 , H01L2224/83856 , H01L2224/83862 , H01L2224/8388 , H01L2224/83885 , H01L2224/83906 , H01L2224/83907 , H01L2224/83948 , H01L2224/92 , H01L2224/9211 , H01L2224/9212 , H01L2224/92125 , H01L2224/94 , H01L2924/3841 , H01L2224/81 , H01L2224/83 , H01L2924/014 , H01L2924/05442 , H01L2924/0549 , H01L2924/095 , H01L2924/053 , H01L2924/06 , H01L2924/00012 , H01L2924/05432 , H01L2924/0532 , H01L2924/01004 , H01L2924/04642 , H01L2924/05042 , H01L2924/00014 , H01L2924/013 , H01L2924/01006 , H01L2924/01082 , H01L2924/01049 , H01L2924/01083 , H01L2924/0105 , H01L2924/01029 , H01L2924/01051 , H01L2924/01047 , H01L2224/27 , H01L21/304 , H01L2221/68368 , H01L21/78
Abstract: 一種半導體裝置之製造方法,其特徵在於包括如下步驟:準備於半導體晶片之凸塊形成面貼附有片狀樹脂組合物之附片狀樹脂組合物的晶片之步驟A;準備形成有電極之安裝用基板之步驟B;以片狀樹脂組合物作為貼合面而將附片狀樹脂組合物之晶片貼附於安裝用基板上,並使形成於半導體晶片上之凸塊與形成於安裝用基板上之電極相對向之步驟C;於步驟C後,加熱片狀樹脂組合物而使之半硬化之步驟D;於步驟D後,於高於步驟D中之加熱之溫度下進行加熱而使凸塊與電極接合並且使片狀組合物硬化之步驟E。
Abstract in simplified Chinese: 一种半导体设备之制造方法,其特征在于包括如下步骤:准备于半导体芯片之凸块形成面贴附有片状树脂组合物之附片状树脂组合物的芯片之步骤A;准备形成有电极之安装用基板之步骤B;以片状树脂组合物作为贴合面而将附片状树脂组合物之芯片贴附于安装用基板上,并使形成于半导体芯片上之凸块与形成于安装用基板上之电极相对向之步骤C;于步骤C后,加热片状树脂组合物而使之半硬化之步骤D;于步骤D后,于高于步骤D中之加热之温度下进行加热而使凸块与电极接合并且使片状组合物硬化之步骤E。
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公开(公告)号:TWI527119B
公开(公告)日:2016-03-21
申请号:TW100146953
申请日:2011-12-16
Applicant: 甲骨文股份有限公司 , ORACLE AMERICA, INC.
Inventor: 安基瑞帝 賽夏沙伊 , ANKIREDDI, SESHASAYEE , 爵廷 維丁 , GEKTIN, VADIM , 瓊斯 詹姆斯A , JONES, JAMES A. , 史丹 瑪格利特B , STERN, MARGARET B.
IPC: H01L21/3205 , H01L21/324
CPC classification number: H01L23/3675 , H01L21/50 , H01L23/42 , H01L24/27 , H01L24/83 , H01L2224/0345 , H01L2224/0401 , H01L2224/04026 , H01L2224/0508 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05644 , H01L2224/16225 , H01L2224/16227 , H01L2224/27334 , H01L2224/27849 , H01L2224/29109 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2224/73253 , H01L2224/75 , H01L2224/75251 , H01L2224/75252 , H01L2224/75755 , H01L2224/75756 , H01L2224/83011 , H01L2224/83013 , H01L2224/83014 , H01L2224/83101 , H01L2224/83191 , H01L2224/83211 , H01L2224/83815 , H01L2924/01029 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/16171 , H01L2924/16251 , H01L2924/16747 , H01L2924/19041 , H01L2924/19105 , H01L2924/00 , H01L2924/00014 , H01L2924/01074 , H01L2924/01023 , H01L2924/00012 , H01L2924/01032
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公开(公告)号:TWI392557B
公开(公告)日:2013-04-11
申请号:TW099129327
申请日:2010-08-31
Applicant: 村田製作所股份有限公司 , MURATA MANUFACTURING CO., LTD.
Inventor: 中野公介 , NAKANO, KOSUKE , 高岡英清 , TAKAOKA, HIDEKIYO
CPC classification number: B23K35/025 , B23K1/00 , B23K1/0016 , B23K35/262 , B23K35/3613 , B23K35/362 , B23K2201/40 , C22C9/05 , C22C9/06 , C22C13/00 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05644 , H01L2224/1132 , H01L2224/1329 , H01L2224/13294 , H01L2224/13311 , H01L2224/13347 , H01L2224/16503 , H01L2224/16507 , H01L2224/2732 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/29311 , H01L2224/29347 , H01L2224/32503 , H01L2224/32507 , H01L2224/81192 , H01L2224/81211 , H01L2224/81447 , H01L2224/81815 , H01L2224/83192 , H01L2224/83211 , H01L2224/83447 , H01L2224/83815 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H05K3/3484 , H05K2201/0215 , H05K2201/0272 , Y10T403/479 , Y10T428/31678 , H01L2924/01028 , H01L2924/00014 , H01L2924/00 , H01L2924/01014 , H01L2924/01015 , H01L2924/01026 , H01L2924/01027 , H01L2924/01046 , H01L2924/01083 , H01L2924/00015 , H01L2924/00012
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5.用於高功率密度晶片之金屬熱接合物 METALLIC THERMAL JOINT FOR HIGH POWER DENSITY CHIPS 审中-公开
Simplified title: 用于高功率密度芯片之金属热接合物 METALLIC THERMAL JOINT FOR HIGH POWER DENSITY CHIPS公开(公告)号:TW201246386A
公开(公告)日:2012-11-16
申请号:TW100146953
申请日:2011-12-16
Applicant: 甲骨文股份有限公司
IPC: H01L
CPC classification number: H01L23/3675 , H01L21/50 , H01L23/42 , H01L24/27 , H01L24/83 , H01L2224/0345 , H01L2224/0401 , H01L2224/04026 , H01L2224/0508 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05644 , H01L2224/16225 , H01L2224/16227 , H01L2224/27334 , H01L2224/27849 , H01L2224/29109 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2224/73253 , H01L2224/75 , H01L2224/75251 , H01L2224/75252 , H01L2224/75755 , H01L2224/75756 , H01L2224/83011 , H01L2224/83013 , H01L2224/83014 , H01L2224/83101 , H01L2224/83191 , H01L2224/83211 , H01L2224/83815 , H01L2924/01029 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/16171 , H01L2924/16251 , H01L2924/16747 , H01L2924/19041 , H01L2924/19105 , H01L2924/00 , H01L2924/00014 , H01L2924/01074 , H01L2924/01023 , H01L2924/00012 , H01L2924/01032
Abstract: 本發明給出一種用於一半導體封裝之裝配的方法,該方法包含藉由反向濺鍍來清潔一晶片之一表面及一熱移除裝置之一表面。該方法包含在一目標接合區域上方用一黏合劑層、一障壁層及一保護層順序地塗佈該晶片之該表面及該熱移除裝置之該表面。將該晶片及該熱移除裝置放置至載體固定件中並預加熱至一目標溫度。接著將一金屬熱界面材料(TIM)預製件機械地軋輥至該晶片之該表面上且使第一載體固定件與第二載體固定件附接在一起,使得透過一無銲劑製程使該晶片之該表面上之金屬TIM層接合至該熱移除裝置之經塗佈表面。該方法包含在一回流爐中加熱該等經接合之載體固定件。
Abstract in simplified Chinese: 本发明给出一种用于一半导体封装之装配的方法,该方法包含借由反向溅镀来清洁一芯片之一表面及一热移除设备之一表面。该方法包含在一目标接合区域上方用一黏合剂层、一障壁层及一保护层顺序地涂布该芯片之该表面及该热移除设备之该表面。将该芯片及该热移除设备放置至载体固定件中并预加热至一目标温度。接着将一金属热界面材料(TIM)预制件机械地轧辊至该芯片之该表面上且使第一载体固定件与第二载体固定件附接在一起,使得透过一无焊剂制程使该芯片之该表面上之金属TIM层接合至该热移除设备之经涂布表面。该方法包含在一回流炉中加热该等经接合之载体固定件。
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公开(公告)号:TW201124224A
公开(公告)日:2011-07-16
申请号:TW099129327
申请日:2010-08-31
Applicant: 村田製作所股份有限公司
CPC classification number: B23K35/025 , B23K1/00 , B23K1/0016 , B23K35/262 , B23K35/3613 , B23K35/362 , B23K2201/40 , C22C9/05 , C22C9/06 , C22C13/00 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05644 , H01L2224/1132 , H01L2224/1329 , H01L2224/13294 , H01L2224/13311 , H01L2224/13347 , H01L2224/16503 , H01L2224/16507 , H01L2224/2732 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/29311 , H01L2224/29347 , H01L2224/32503 , H01L2224/32507 , H01L2224/81192 , H01L2224/81211 , H01L2224/81447 , H01L2224/81815 , H01L2224/83192 , H01L2224/83211 , H01L2224/83447 , H01L2224/83815 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H05K3/3484 , H05K2201/0215 , H05K2201/0272 , Y10T403/479 , Y10T428/31678 , H01L2924/01028 , H01L2924/00014 , H01L2924/00 , H01L2924/01014 , H01L2924/01015 , H01L2924/01026 , H01L2924/01027 , H01L2924/01046 , H01L2924/01083 , H01L2924/00015 , H01L2924/00012
Abstract: 本發明係提供一種焊膏及使用其之接合可靠性高之接合方法及接合結構,該焊膏於焊接步驟中第1金屬與第2金屬之擴散性良好,於低溫且短時間生成熔點高之金屬間化合物,焊接後第1金屬幾乎不殘留,且耐熱強度優良。本發明之焊膏具備下述要件而構成:包含金屬成份與助熔劑成份,該金屬成份包含第1金屬粉末與比該第1金屬熔點高之第2金屬粉末,第1金屬係Sn或含Sn之合金,第2金屬係金屬或合金,與第1金屬生成顯現310℃以上熔點之金屬間化合物,且前述金屬間化合物之晶格常數與前述第2金屬成份之晶格常數之差即晶格常數差為50%以上。另,第2金屬在金屬成份中所占比率為30體積%以上。作為第2金屬,使用Cu-Mn合金或Cu-Ni合金。
Abstract in simplified Chinese: 本发明系提供一种焊膏及使用其之接合可靠性高之接合方法及接合结构,该焊膏于焊接步骤中第1金属与第2金属之扩散性良好,于低温且短时间生成熔点高之金属间化合物,焊接后第1金属几乎不残留,且耐热强度优良。本发明之焊膏具备下述要件而构成:包含金属成份与助熔剂成份,该金属成份包含第1金属粉末与比该第1金属熔点高之第2金属粉末,第1金属系Sn或含Sn之合金,第2金属系金属或合金,与第1金属生成显现310℃以上熔点之金属间化合物,且前述金属间化合物之晶格常数与前述第2金属成份之晶格常数之差即晶格常数差为50%以上。另,第2金属在金属成份中所占比率为30体积%以上。作为第2金属,使用Cu-Mn合金或Cu-Ni合金。
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