Abstract:
Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.
Abstract:
Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.
Abstract:
Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.
Abstract:
Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more lifting fingers attached to the hoop. The three or more lifting fingers are configured to support a substrate outside the inner volume of the confinement ring.
Abstract:
Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.
Abstract:
Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.