公开(公告)号：US20160322242A1

公开(公告)日：2016-11-03

申请号：US15144736

申请日：2016-05-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew NGUYEN ,  Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG

IPC: H01L21/67 ,  C23C16/505 ,  H01L21/683 ,  H01J37/32

CPC classification number: C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32715 ,  H01L21/68742 ,  H01L21/68785

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，用于处理衬底的设备包括具有设置在处理室的电介质盖下方的内部处理容积的处理室; 设置在所述处理室中并具有用于支撑衬底的支撑表面的衬底支撑件; 感应线圈，设置在所述电介质盖的上方，以将RF能量感应地耦合到所述内部处理容积中以在所述衬底支撑件上方形成等离子体; 以及耦合到提升机构以将所述第一感应敷料器环定位在所述内部处理容积内的第一感应式施加器环。

公开(公告)号：US20160372307A1

公开(公告)日：2016-12-22

申请号：US14742142

申请日：2015-06-17

Applicant: Applied Materials, Inc.

Inventor： YANG YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32 ,  C23C14/48 ,  C23C16/458 ,  C23C16/505

CPC classification number: H01J37/32715 ,  H01J37/32165 ,  H01J37/32568 ,  H01J37/3299

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Abstract translation: 本文所述的实施方案提供了能够调整等离子体室内的等离子体的衬底支撑组件。 在一个实施例中，提供了一种用于调谐腔室中的等离子体的方法。 该方法包括向衬底支撑组件中的第一电极提供第一射频功率和直流电力，在与第一电极不同的位置处向衬底支撑组件中的第二电极提供第二射频功率，监测参数 的第一和第二射频功率，并且基于所监视的参数来调整第一和第二射频功率中的一个或两个。

公开(公告)号：US20200006036A1

公开(公告)日：2020-01-02

申请号：US16391263

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN

IPC: H01J37/305 ,  H01J37/32 ,  H01L21/3065

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

公开(公告)号：US20150371824A1

公开(公告)日：2015-12-24

申请号：US14310969

申请日：2014-06-20

Applicant: Applied Materials, Inc.

Inventor： Steven LANE ,  Yang YANG ,  Kartik RAMASWAMY ,  Lawrence WONG

IPC: H01J37/32 ,  C23F4/00 ,  C23C16/513

CPC classification number: H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/334

Abstract: Implementations described herein inject feedstock gases into multiple zones of an inductively coupled plasma processing reactor with minimal or no effect on process skew. In one embodiment, an integrated gas and coil assembly is provided that includes an upper surface and a lower surface, a first RF field applicator coil bounded at the upper surface and the lower surface, a second RF field applicator coil circumscribed by the first RF field applicator coil and bounded at the upper surface and the lower surface and an RF shield disposed between the first and second RF field generator wherein the RF shield extends from the lower surface and past the upper surface. The RF shield may have at least one gas channel disposed therethrough.

Abstract translation: 本文所述的实施方案将原料气体注入到电感耦合等离子体处理反应器的多个区域中，对工艺偏差具有最小或没有影响。 在一个实施例中，提供集成的气体和线圈组件，其包括上表面和下表面，在上表面和下表面界定的第一RF场施加器线圈，由第一RF场限定的第二RF场施加器线圈 施加器线圈并且在上表面和下表面处限定，并且RF屏蔽设置在第一和第二RF场发生器之间，其中RF屏蔽件从下表面延伸并且经过上表面。 RF屏蔽件可以具有穿过其中布置的至少一个气体通道。

公开(公告)号：US20190221437A1

公开(公告)日：2019-07-18

申请号：US16239170

申请日：2019-01-03

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01J37/305 ,  H01L21/67

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

公开(公告)号：US20190057862A1

公开(公告)日：2019-02-21

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Eswaranand VENKATASUBRAMANIAN ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/52

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20180366306A1

公开(公告)日：2018-12-20

申请号：US16113736

申请日：2018-08-27

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

公开(公告)号：US20230162996A1

公开(公告)日：2023-05-25

申请号：US18100063

申请日：2023-01-23

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/67 ,  H01L21/311 ,  C23C16/02 ,  C23C16/517 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01L21/31116 ,  C23C16/0245 ,  C23C16/517 ,  H01J37/32091 ,  H01J37/32568 ,  H01J2237/3151 ,  H01J2237/3137

Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

公开(公告)号：US20190393053A1

公开(公告)日：2019-12-26

申请号：US16441579

申请日：2019-06-14

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/67 ,  H01L21/311 ,  C23C16/517 ,  C23C16/02

Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

公开(公告)号：US20190228970A1

公开(公告)日：2019-07-25

申请号：US16371802

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/26 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/56 ,  C01B32/25 ,  H01L21/3213 ,  C23C16/509

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.