公开(公告)号：US20180209037A1

公开(公告)日：2018-07-26

申请号：US15820777

申请日：2017-11-22

Applicant: Applied Materials, Inc.

Inventor： Bhargav CITLA ,  Jingjing LIU ,  Zhong Qiang HUA ,  Chentsau YING ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/06 ,  C23C14/00 ,  C23C14/58 ,  C23C16/26 ,  C23C16/503 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally describe methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a high power impulse magnetron sputtering (HiPIMS) process, and in particular, biasing of the substrate during the deposition process and flowing a nitrogen source gas and/or a hydrogen source gas into the processing chamber in addition to an inert gas to improve the morphology and film stress of the deposited amorphous carbon layer.

公开(公告)号：US20150315707A1

公开(公告)日：2015-11-05

申请号：US14267865

申请日：2014-05-01

Applicant: Applied Materials, Inc.

Inventor： Jun XUE ,  Jingjing LIU ,  Yongmei CHEN ,  Ludovic GODET ,  Chentsau YING ,  Shambhu N. ROY

IPC: C23C16/56 ,  C23C16/505 ,  C23C16/455 ,  C23C16/27 ,  C23C16/46

CPC classification number: C23C16/56 ,  C23C16/27 ,  C23C16/272 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/505

Abstract: Methods for making a nanocrystalline diamond layer are disclosed herein. A method of forming a layer can include activating a deposition gas comprising an alkane and a hydrogen containing gas at a first pressure, delivering the activated deposition gas to the substrate at a second pressure which is less than the first pressure, forming a nanocrystalline diamond layer, treating the layer with an activated hydrogen containing gas to remove one or more polymers from the surface and repeating the cycle to achieve a desired thickness.

Abstract translation: 本文公开了制备纳米晶体金刚石层的方法。 形成层的方法可以包括在第一压力下激活包括烷烃和含氢气体的沉积气体，在小于第一压力的第二压力下将活化的沉积气体输送到衬底，形成纳米晶体金刚石层 用活化的含氢气体处理层以从表面去除一种或多种聚合物并重复该循环以达到所需的厚度。

公开(公告)号：US20170062216A1

公开(公告)日：2017-03-02

申请号：US15348170

申请日：2016-11-10

Applicant: Applied Materials, Inc.

Inventor： Yongmei CHEN ,  Christopher S. NGAI ,  Jingjing LIU ,  Jun XUE ,  Chentsau YING ,  Ludovic GODET

IPC: H01L21/033 ,  H01L27/115

CPC classification number: H01L21/0332 ,  C23C16/26 ,  C23C16/27 ,  C23C16/274 ,  C23C16/279 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/49 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/518

Abstract: A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.

Abstract translation: 本文公开了一种用于形成半导体器件的纳米晶体金刚石层及其使用方法。 该器件可以包括具有处理表面和支撑表面的衬底，形成在处理表面上的器件层和形成在处理层上的纳米晶体金刚石层，该纳米晶体金刚石层的平均晶粒尺寸在2nm和5nm之间 。 该方法可以包括将衬底定位在处理室中，在处理表面上沉积器件层，在器件层上沉积纳米晶体金刚石层，平均晶粒尺寸在2nm和5nm之间的纳米晶体金刚石层，图案化和 蚀刻纳米晶体金刚石层，蚀刻器件层以形成特征并从器件层的表面灰化纳米晶体金刚石层。

公开(公告)号：US20140187038A1

公开(公告)日：2014-07-03

申请号：US14145434

申请日：2013-12-31

Applicant: Applied Materials, Inc.

Inventor： Joshua COLLINS ,  Murali K. NARASIMHAN ,  Jingjing LIU ,  Sang-Hyeob LEE ,  Kai WU ,  Avgerinos V. GELATOS

IPC: H01L21/768

CPC classification number: H01L21/76876 ,  H01L21/743 ,  H01L21/76814 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53266 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层 含有氮化钨和碳。 该方法还包括在热退火过程中（例如，从约700℃至小于1000℃的温度）通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料） ）。 随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。

公开(公告)号：US20180209035A1

公开(公告)日：2018-07-26

申请号：US15857384

申请日：2017-12-28

Applicant: Applied Materials, Inc.

Inventor： Jingjing LIU ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Yongmei CHEN ,  Anantha K. SUBRAMANI

IPC: C23C14/34 ,  H01L21/265 ,  H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/35 ,  C23C14/48

Abstract: Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

公开(公告)号：US20180044781A1

公开(公告)日：2018-02-15

申请号：US15349433

申请日：2016-11-11

Applicant: Applied Materials, Inc.

Inventor： Michael STOWELL ,  Viachslav BABAYAN ,  Jingjing LIU ,  Zhong Qiang HUA

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  H01L21/683

Abstract: Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.

公开(公告)号：US20160064500A1

公开(公告)日：2016-03-03

申请号：US14833858

申请日：2015-08-24

Applicant: Applied Materials, Inc.

Inventor： Yongmei CHEN ,  Christopher S. NGAI ,  Jingjing LIU ,  Chentsau YING ,  Ludovic GODET

IPC: H01L29/423 ,  H01L21/311 ,  H01L29/51 ,  H01L21/02 ,  H01L29/49 ,  H01L27/115

CPC classification number: H01L21/0332 ,  C23C16/26 ,  C23C16/27 ,  C23C16/274 ,  C23C16/279 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/49 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/518

Abstract: A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.

Abstract translation: 本文公开了用于形成半导体器件的纳米晶体金刚石层及其使用方法。 该器件可以包括具有处理表面和支撑表面的衬底，形成在处理表面上的器件层和形成在处理层上的纳米晶体金刚石层，该纳米晶体金刚石层的平均晶粒尺寸在2nm和5nm之间 。 该方法可以包括将衬底定位在处理室中，在处理表面上沉积器件层，在器件层上沉积纳米晶体金刚石层，平均晶粒尺寸在2nm和5nm之间的纳米晶体金刚石层，图案化和 蚀刻纳米晶体金刚石层，蚀刻器件层以形成特征并从器件层的表面灰化纳米晶体金刚石层。

公开(公告)号：US20190228970A1

公开(公告)日：2019-07-25

申请号：US16371802

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/26 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/56 ,  C01B32/25 ,  H01L21/3213 ,  C23C16/509

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

公开(公告)号：US20170372899A1

公开(公告)日：2017-12-28

申请号：US15195640

申请日：2016-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  C23C16/26 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3213 ,  C23C16/56 ,  H01L21/762

CPC classification number: H01L21/0332 ,  C01B32/25 ,  C23C16/26 ,  C23C16/505 ,  C23C16/509 ,  C23C16/56 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3255 ,  H01J37/32623 ,  H01J37/3266 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76224

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.