公开(公告)号：US20170352726A1

公开(公告)日：2017-12-07

申请号：US15173234

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Jie ZHOU ,  Zhong Qiang HUA ,  Chentsau YING ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L29/08 ,  H01L29/66 ,  H01L21/308 ,  H01L21/324 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/78 ,  H01L29/04

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67742 ,  H01L21/67766 ,  H01L29/045 ,  H01L29/66795 ,  H01L29/7851

Abstract: Methods for forming fin structures with desired profile and dimensions for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. The methods include a structure reshaping process to reshape a shaped structure, such as a diamond like structure formed on a fin structure. In one embodiment, a method for forming a structure on a substrate includes performing an epitaxial deposition process to form a shaped structure on a fin structure disposed on a substrate, performing a mask layer deposition process to form a mask layer having a first width on the shaped structure, and performing a mask trimming process to trim the mask layer from the first width from a second width.

公开(公告)号：US20190228970A1

公开(公告)日：2019-07-25

申请号：US16371802

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/26 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/56 ,  C01B32/25 ,  H01L21/3213 ,  C23C16/509

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

公开(公告)号：US20170372899A1

公开(公告)日：2017-12-28

申请号：US15195640

申请日：2016-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  C23C16/26 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3213 ,  C23C16/56 ,  H01L21/762

CPC classification number: H01L21/0332 ,  C01B32/25 ,  C23C16/26 ,  C23C16/505 ,  C23C16/509 ,  C23C16/56 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3255 ,  H01J37/32623 ,  H01J37/3266 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76224

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.