公开(公告)号：US20150114295A1

公开(公告)日：2015-04-30

申请号：US14521588

申请日：2014-10-23

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon KIM ,  Dae Youn KIM ,  Dong Rak JUNG ,  Young Seok CHOI ,  Sang Wook LEE

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/44 ,  C23C16/46

CPC classification number: C23C16/4412 ,  C23C16/452 ,  C23C16/45508

Abstract: An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support. A plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied onto the substrate without contacting other parts of the reactor.

Abstract translation: 本发明的示例性实施例提供了一种沉积设备，包括：用于支撑衬底的衬底支撑件; 反应室壁，其限定反应室并接触所述基板支撑件; 连接到反应室壁的多个气体入口; 连接到所述多个气体入口中的至少一个的远程等离子体单元; 以及连接到所述多个气体入口并且与所述衬底支撑件一起限定反应区域的气体供应路径。 通过多个气体入口的多个气体沿气体供应路径移动，以直接供应到基板上，而不与反应器的其它部分接触。

公开(公告)号：US20200224308A1

公开(公告)日：2020-07-16

申请号：US16834283

申请日：2020-03-30

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo JANG ,  Dae Youn KIM ,  Jeong Ho LEE ,  Young Hoon KIM ,  Seung Seob LEE ,  Woo Chan KIM

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US20170044665A1

公开(公告)日：2017-02-16

申请号：US15208114

申请日：2016-07-12

Applicant: ASM IP Holding B.V.

Inventor： Jong Won SHON ,  Dae Youn KIM ,  Sang Don Lee ,  Hyun Soo JANG

IPC: C23C16/458 ,  C23C16/50 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4412 ,  C23C16/4401 ,  C23C16/45544 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32834

Abstract: A deposition apparatus includes: a substrate support having a main surface on which a substrate is placed; a body disposed on the main surface and including a hollow portion having an exposed upper portion; a plasma electrode unit provided at a inner circumferential surface of the body to separate the hollow portion into an upper space and a lower space; and a gas supply unit supplying process gas to the plasma electrode unit, wherein a gas exhaust channel extending from the lower space to an exhaust outlet provided at a top of the body is formed in the body.

Abstract translation: 沉积设备包括：具有其上放置基板的主表面的基板支撑件; 主体，其设置在所述主表面上并且包括具有暴露的上部的中空部; 设置在所述主体的内周面的等离子体电极单元，以将所述中空部分分离成上部空间和下部空间; 以及气体供给单元，其向所述等离子体电极单元供给处理气体，其中，在所述体内形成有从所述下部空间延伸到设置在所述体的顶部的排气口的排气通道。

公开(公告)号：US20190341283A1

公开(公告)日：2019-11-07

申请号：US16516499

申请日：2019-07-19

Applicant: ASM IP Holding B.V.

Inventor： Soo Hyun KIM ,  Dae Youn KIM ,  Izumi ARAI

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

Abstract: Provided is a substrate processing apparatus including a load-lock chamber; a transfer chamber connected to the load-lock chamber; and one or more processing chambers connected to the transfer chamber. The transfer chamber includes a transfer arm that transfers a substrate between the load-lock chamber and the one or more processing chambers, the load-lock chamber includes a plurality of load-lock stations for accommodating a plurality of substrates as a matrix of m×n. According to the substrate processing apparatus, a time taken to transfer substrates may be reduced greatly, and productivity may be improved.

公开(公告)号：US20180066359A1

公开(公告)日：2018-03-08

申请号：US15807896

申请日：2017-11-09

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

公开(公告)号：US20170040204A1

公开(公告)日：2017-02-09

申请号：US15211538

申请日：2016-07-15

Applicant: ASM IP Holding B.V.

Inventor： Soo Hyun KIM ,  Dae Youn KIM ,  Izumi ARAI

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67201 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67742 ,  H01L21/67754 ,  H01L21/68742

Abstract: Provided is a substrate processing apparatus including a load-lock chamber; a transfer chamber connected to the load-lock chamber; and one or more processing chambers connected to the transfer chamber. The transfer chamber includes a transfer arm that transfers a substrate between the load-lock chamber and the one or more processing chambers, the load-lock chamber includes a plurality of load-lock stations for accommodating a plurality of substrates as a matrix of m×n. According to the substrate processing apparatus, a time taken to transfer substrates may be reduced greatly, and productivity may be improved.

Abstract translation: 提供了一种基板处理装置，其包括装载锁定室; 连接到所述装载锁定室的传送室; 以及连接到传送室的一个或多个处理室。 传送室包括传送臂，其在负载锁定室和一个或多个处理室之间传送衬底，负载锁定室包括多个负载锁定站，用于容纳多个衬底作为矩阵m× n。 根据基板处理装置，可以大大降低转印基板所花费的时间，可以提高生产率。

公开(公告)号：US20150125628A1

公开(公告)日：2015-05-07

申请号：US14285831

申请日：2014-05-23

Applicant: ASM IP Holding B.V.

Inventor： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/308 ,  C23C16/45523 ,  C23C16/50

Abstract: Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

Abstract translation: 公开了一种沉积薄膜的方法，该方法包括将净化气体和源气体在第一时段内供应到多个反应器中，停止源气体的供应，以及将净化气体和反应气体供应到多个 反应器第二期，并将反应气体和等离子体供应到多个反应器中第三期。