公开(公告)号：US12154824B2

公开(公告)日：2024-11-26

申请号：US17399049

申请日：2021-08-11

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US20210327714A1

公开(公告)日：2021-10-21

申请号：US17233382

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US20250038048A1

公开(公告)日：2025-01-30

申请号：US18912027

申请日：2024-10-10

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US20250029829A1

公开(公告)日：2025-01-23

申请号：US18770973

申请日：2024-07-12

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  Sungdae Woo ,  JuSeok Jeon ,  SeungRyul Lee ,  Hyunchul Kim ,  Yujin Kim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/033

Abstract: Provided is a substrate processing method using a PEALD method in which an amorphous TiN film is formed on the substrate. The substrate processing method comprises providing the substrate to a reaction chamber, supplying a first gas to the reaction chamber, supplying a second gas to the reaction chamber, and applying a power to the reaction chamber, wherein a frequency of the power is a variable frequency, wherein the second gas is activated by the power.

公开(公告)号：US12020934B2

公开(公告)日：2024-06-25

申请号：US17233384

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0228 ,  H01L21/31144

Abstract: A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.

公开(公告)号：US20240145236A1

公开(公告)日：2024-05-02

申请号：US18383109

申请日：2023-10-24

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  Ryu Nakano ,  KiHun Kim ,  Rin Ha

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02274

Abstract: Provided is a method for improving the inhibiting characteristics in the upper portion of the gap. In one embodiment of the disclosure, a first inhibitor and a second inhibitor are supplied, therefore more inhibiting radicals may be generated and remove more reaction activation sites from the upper portion of the gap and improve the inhibiting characteristics in the upper portion compared to in the lower portion. The substrate processing method of the disclosure may facilitate further filling the gap with negative slope and complex structure.

公开(公告)号：US11658035B2

公开(公告)日：2023-05-23

申请号：US17358860

申请日：2021-06-25

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/305

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01L21/308

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.

公开(公告)号：US20220013358A1

公开(公告)日：2022-01-13

申请号：US17233384

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

Abstract: A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.

公开(公告)号：US12243742B2

公开(公告)日：2025-03-04

申请号：US17233382

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： Seunghyun Lee ,  Hyunchul Kim ,  Seungwoo Choi ,  Yeahyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US20230395372A1

公开(公告)日：2023-12-07

申请号：US18236654

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada ,  Kai Matsuhisa ,  YouJin Choi ,  Hyunchul Kim ,  Eunji Bae ,  SeungRyul Lee ,  Naoki Inoue ,  Ryu Nakano ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/50

CPC classification number: H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32165 ,  H01J37/3244 ,  C23C16/04 ,  C23C16/50 ,  H01J2237/332

Abstract: Methods of forming patterned structures suitable for a multiple patterning process and manipulating film properties are disclosed. Exemplary methods include forming a layer overlying the substrate, followed by treating the layer, wherein the layer is formed by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency. Exemplary methods can further include a step of treating the deposited material.