公开(公告)号：US20140021636A1

公开(公告)日：2014-01-23

申请号：US14033673

申请日：2013-09-23

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Yuan-Chang Su ,  Shih-Fu Huang ,  Chia-Cheng Chen ,  Tzu-Hui Chen ,  Kuang-Hsiung Chen ,  Pao-Ming Hsieh ,  Ming Chiang Lee ,  Bernd Karl Appelt

IPC: H01L23/522

CPC classification number: H01L24/14 ,  H01L21/4857 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/28 ,  H01L23/296 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/5226 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48237 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83385 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  Y10T29/49155 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A multilayer substrate includes a first outer conductive patterned layer, a first insulating layer exposing a portion of the first outer conductive patterned layer to define a first set of pads, a second outer conductive patterned layer, and a second insulating layer exposing a portion of the second outer conductive patterned layer to define a second set of pads. The multilayer substrate further includes inner layers each with an inner conductive patterned layer, multiple inner conductive posts formed adjacent to the inner conductive patterned layer, and an inner dielectric layer, where the inner conductive patterned layer and the inner conductive posts are embedded in the inner dielectric layer, and a top surface of each of the inner conductive posts is exposed from the inner dielectric layer.

Abstract translation: 多层衬底包括第一外部导电图案化层，暴露第一外部导电图案化层的一部分以限定第一组焊盘的第一绝缘层，第二外部导电图案化层和暴露部分第一绝缘层的第二绝缘层 第二外导电图案层以限定第二组焊盘。 多层基板还包括内层，每层具有内部导电图案层，邻近内部导电图案化层形成的多个内部导电柱和内部电介质层，其中内部导电图案层和内部导电柱嵌入内部 电介质层和每个内部导电柱的顶表面从内部电介质层露出。

公开(公告)号：US10083902B2

公开(公告)日：2018-09-25

申请号：US15208569

申请日：2016-07-12

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yuan-Chang Su ,  Chih-Cheng Lee ,  Cheng-Lin Ho

IPC: H01L23/498 ,  H05K1/18 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K1/188 ,  H01L2924/00

Abstract: Disclosed is a semiconductor package structure and manufacturing method. The semiconductor package structure includes a first dielectric layer, a second dielectric layer, a component, a patterned conductive layer and at least two conductive vias. The first dielectric layer has a first surface and a second surface opposite the first surface. The second dielectric layer has a first surface and a second surface opposite the first surface. The second surface of the first dielectric layer is attached to the first surface of the second dielectric layer. A component within the second dielectric layer has at least two electrical contacts adjacent to the second surface of the first dielectric layer. The patterned conductive layer within the first dielectric layer is adjacent to the first surface of the first dielectric layer. The conductive vias penetrate the first dielectric layer and electrically connect the electrical contacts with the patterned conductive layer.

公开(公告)号：US09420695B2

公开(公告)日：2016-08-16

申请号：US14548118

申请日：2014-11-19

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yuan-Chang Su ,  Chih-Cheng Lee ,  Cheng-Lin Ho

IPC: H01L23/552 ,  H05K1/18 ,  H01L23/498 ,  H01L21/48 ,  H05K3/30 ,  H05K3/46 ,  H05K3/10 ,  H05K3/18

CPC classification number: H01L23/49827 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K1/188 ,  H01L2924/00

Abstract: Disclosed is a semiconductor package structure and manufacturing method. The semiconductor package structure includes a first dielectric layer, a second dielectric layer, a component, a patterned conductive layer and at least two conductive vias. The first dielectric layer has a first surface and a second surface opposite the first surface. The second dielectric layer has a first surface and a second surface opposite the first surface. The second surface of the first dielectric layer is attached to the first surface of the second dielectric layer. A component within the second dielectric layer has at least two electrical contacts adjacent to the second surface of the first dielectric layer. The patterned conductive layer within the first dielectric layer is adjacent to the first surface of the first dielectric layer. The conductive vias penetrate the first dielectric layer and electrically connect the electrical contacts with the patterned conductive layer.

Abstract translation: 公开了半导体封装结构和制造方法。 半导体封装结构包括第一电介质层，第二电介质层，部件，图案化导电层和至少两个导电通孔。 第一电介质层具有与第一表面相对的第一表面和第二表面。 第二电介质层具有与第一表面相对的第一表面和第二表面。 第一电介质层的第二表面附着到第二电介质层的第一表面。 第二电介质层内的部件具有与第一电介质层的第二表面相邻的至少两个电触点。 第一介电层内的图案化导电层与第一介电层的第一表面相邻。 导电通孔穿透第一电介质层并将电触点与图案化的导电层电连接。

公开(公告)号：US09196597B2

公开(公告)日：2015-11-24

申请号：US14453139

申请日：2014-08-06

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Yuan-Chang Su ,  Shih-Fu Huang ,  Chia-Cheng Chen ,  Tzu-Hui Chen ,  Kuang-Hsiung Chen ,  Pao-Ming Hsieh ,  Ming Chiang Lee ,  Bernd Karl Appelt

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/522 ,  H01L23/28

CPC classification number: H01L24/14 ,  H01L21/4857 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/28 ,  H01L23/296 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/5226 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48237 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83385 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  Y10T29/49155 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A multilayer substrate includes a first outer conductive patterned layer, a first insulating layer exposing a portion of the first outer conductive patterned layer to define a first set of pads, a second outer conductive patterned layer, and a second insulating layer exposing a portion of the second outer conductive patterned layer to define a second set of pads. The multilayer substrate further includes inner layers each with an inner conductive patterned layer, multiple inner conductive posts formed adjacent to the inner conductive patterned layer, and an inner dielectric layer, where the inner conductive patterned layer and the inner conductive posts are embedded in the inner dielectric layer, and a top surface of each of the inner conductive posts is exposed from the inner dielectric layer.

Abstract translation: 多层衬底包括第一外部导电图案化层，暴露第一外部导电图案化层的一部分以限定第一组焊盘的第一绝缘层，第二外部导电图案化层和暴露部分第一绝缘层的第二绝缘层 第二外导电图案层以限定第二组焊盘。 多层基板还包括内层，每层具有内部导电图案层，邻近内部导电图案化层形成的多个内部导电柱和内部电介质层，其中内部导电图案层和内部导电柱嵌入内部 电介质层和每个内部导电柱的顶表面从内部电介质层露出。

公开(公告)号：US09659853B2

公开(公告)日：2017-05-23

申请号：US14696355

申请日：2015-04-24

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： You-Lung Yen ,  Chih-Cheng Lee ,  Yuan-Chang Su

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L21/683 ,  H01L23/544

CPC classification number: H01L23/49838 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5385 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68345 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/73204

Abstract: An interposer substrate includes a first circuit pattern embedded at a first surface of a dielectric layer and a second circuit pattern embedded at a second surface of the dielectric layer; a middle patterned conductive layer in the dielectric layer between the first circuit pattern and the second circuit pattern; first conductive vias, where each first conductive via includes a first end adjacent to the first circuit pattern and a second end adjacent to the middle patterned conductive layer, wherein a width of the first end is greater than a width of the second end; second conductive vias, where each second conductive via including a third end adjacent to the second circuit pattern and a fourth end adjacent to the middle patterned conductive layer, wherein a width of the third end is greater than a width of the fourth end.

公开(公告)号：US09117697B2

公开(公告)日：2015-08-25

申请号：US14303371

申请日：2014-06-12

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chun-Che Lee ,  Yuan-Chang Su ,  Wen-Chi Cheng ,  Guo-Cheng Liao ,  Yi-Chuan Ding

IPC: H01L23/52 ,  H01L21/44 ,  H01L23/00

CPC classification number: H01L24/11 ,  H01L23/13 ,  H01L23/498 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L2224/11019 ,  H01L2224/11622 ,  H01L2224/1163 ,  H01L2224/13147 ,  H01L2224/14104 ,  H01L2224/16225 ,  H01L2924/12042 ,  H05K3/108 ,  H05K3/3436 ,  H05K3/4007 ,  H05K3/4682 ,  H05K2201/0376 ,  H05K2201/09045 ,  H05K2201/10674 ,  H05K2203/0723 ,  H05K2203/1461 ,  H01L2924/00

Abstract: The present disclosure relates to a semiconductor substrate and a method for making the same. The semiconductor substrate includes an insulation layer, a first circuit layer, a second circuit layer, a plurality of conductive vias and a plurality of bumps. The first circuit layer is embedded in a first surface of the insulation layer, and exposed from the first surface of the insulation layer. The second circuit layer is located on a second surface of the insulation layer and electrically connected to the first circuit layer through the conductive vias. The bumps are directly located on part of the first circuit layer, where the lattice of the bumps is the same as that of the first circuit layer.

Abstract translation: 本公开涉及一种半导体衬底及其制造方法。 半导体衬底包括绝缘层，第一电路层，第二电路层，多个导电通孔和多个凸块。 第一电路层嵌入绝缘层的第一表面，并从绝缘层的第一表面露出。 第二电路层位于绝缘层的第二表面上，并通过导电通孔与第一电路层电连接。 凸块直接位于第一电路层的一部分上，其中凸块的晶格与第一电路层的晶格相同。

公开(公告)号：US10424547B2

公开(公告)日：2019-09-24

申请号：US15691053

申请日：2017-08-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chih Cheng Lee ,  Yuan-Chang Su

IPC: H05K1/03 ,  H05K1/11 ,  H01L23/00 ,  H01L23/498 ,  H01L21/683 ,  H01L21/48 ,  H05K1/02

Abstract: A substrate for packaging a semiconductor device is disclosed. The substrate includes a first dielectric layer having a first surface and a second surface opposite to the first surface, a first patterned conductive layer adjacent to the first surface of the first dielectric layer, and a second patterned conductive layer adjacent to the second surface of the first dielectric layer. The first dielectric layer includes a first portion adjacent to the first surface, a second portion adjacent to the second surface, and a reinforcement structure between the first portion and the second portion. A thickness of the first portion of the first dielectric layer is different from a thickness of the second portion of the first dielectric layer.

公开(公告)号：US10181438B2

公开(公告)日：2019-01-15

申请号：US14523733

申请日：2014-10-24

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Chun-Che Lee ,  Ming-Chiang Lee ,  Yuan-Chang Su ,  Tien-Szu Chen ,  Chih-Cheng Lee ,  You-Lung Yen

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H05K1/11 ,  H05K3/00 ,  H01L21/48 ,  H05K3/46

Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a dielectric layer, a circuit layer, a first protection layer and a plurality of conductive posts. The dielectric layer has a first surface and a second surface that are opposite to each other. The circuit layer is embedded in the dielectric layer and is exposed from the first surface. The first protection layer covers a portion of the first circuit layer and defines a plurality of holes that expose a remaining portion of the first circuit layer. The conductive posts are formed in the holes.

公开(公告)号：US10096542B2

公开(公告)日：2018-10-09

申请号：US15439752

申请日：2017-02-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chih Cheng Lee ,  Yuan-Chang Su

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L21/683 ,  H01L23/00

Abstract: A substrate includes a first dielectric structure, a first circuit layer, a second dielectric structure and a second circuit layer. The first circuit layer is embedded in the first dielectric structure, and does not protrude from a first surface of the first dielectric structure. The second dielectric structure is disposed on the first surface of the first dielectric structure. The second circuit layer is embedded in the second dielectric structure, and is electrically connected to the first circuit layer. A first surface of the second circuit layer is substantially coplanar with a first surface of the second dielectric structure, and a surface roughness value of a first surface of the first circuit layer is different from a surface roughness value of the first surface of the second circuit layer.

公开(公告)号：US09564346B2

公开(公告)日：2017-02-07

申请号：US15088683

申请日：2016-04-01

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yuan-Chang Su ,  Shih-Fu Huang ,  Chia-Cheng Chen

IPC: H01L21/48 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68345 ,  H01L2224/27013 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: A package carrier includes: (1) a dielectric layer; (2) a first electrically conductive pattern, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer, and including a plurality of first pads; (3) a plurality of first electrically conductive posts, extending through the dielectric layer, wherein each of the first electrically conductive posts includes a first electrically conductive post segment connected to at least one of the first pads and a second electrically conductive post segment connected to the first electrically conductive post segment, and a lateral extent of the first electrically conductive post segment is different from a lateral extent of the second electrically conductive post segment; and (4) a second electrically conductive pattern, disposed adjacent to a second surface of the dielectric layer, and including a plurality of second pads connected to respective ones of the second electrically conductive post segments.

Abstract translation: 包装载体包括：（1）电介质层; （2）第一导电图案，其嵌入在所述电介质层中并且邻近所述电介质层的第一表面设置，并且包括多个第一焊盘; （3）延伸穿过介电层的多个第一导电柱，其中每个第一导电柱包括连接到至少一个第一焊盘的第一导电柱段和连接到第一导电柱段的第二导电柱段 第一导电柱段和第一导电柱段的横向范围不同于第二导电柱段的横向范围; 以及（4）第二导电图案，其邻近所述电介质层的第二表面设置，并且包括连接到所述第二导电柱段中的相应一个的多个第二焊盘。