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公开(公告)号：US20180219145A1
公开(公告)日：2018-08-02
申请号：US15747447
申请日：2016-07-20
发明人： Martin Unterburger
IPC分类号： H01L33/62 , H01L33/54 , H01L33/44 , H01L33/64 , H01L33/48 , H01L23/00 , H01L21/56 , H01L21/683
CPC分类号： H01L33/62 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L24/13 , H01L24/24 , H01L24/82 , H01L33/44 , H01L33/486 , H01L33/54 , H01L33/647 , H01L2221/68359 , H01L2221/68377 , H01L2224/04105 , H01L2224/11602 , H01L2224/1163 , H01L2224/12105 , H01L2224/13147 , H01L2224/19 , H01L2224/2402 , H01L2224/82101 , H01L2224/82106 , H01L2924/18162 , H01L2933/0025 , H01L2933/005 , H01L2933/0066 , H01L2933/0075
摘要： A method for producing a component having a semiconductor body includes providing the semiconductor body including a radiation passage surface and a rear side facing away from the radiation passage surface, wherein the semiconductor body comprises on the rear side a connection location for the electrical contacting of the semiconductor body, providing a composite carrier including a carrier layer and a partly cured connecting layer, applying the semiconductor body on the composite carrier, such that the connection location penetrates into the partly cured connecting layer, curing the connecting layer to form a solid composite, applying a molded body material on the composite carrier after curing the connecting layer, wherein the molded body covers side surfaces of the semiconductor body, forming a cutout through the carrier layer and the connecting layer in order to expose the connection location, and filling the cutout with an electrically conductive material.
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公开(公告)号：US09117697B2
公开(公告)日：2015-08-25
申请号：US14303371
申请日：2014-06-12
发明人： Chun-Che Lee , Yuan-Chang Su , Wen-Chi Cheng , Guo-Cheng Liao , Yi-Chuan Ding
CPC分类号： H01L24/11 , H01L23/13 , H01L23/498 , H01L23/49827 , H01L24/13 , H01L24/14 , H01L24/16 , H01L2224/11019 , H01L2224/11622 , H01L2224/1163 , H01L2224/13147 , H01L2224/14104 , H01L2224/16225 , H01L2924/12042 , H05K3/108 , H05K3/3436 , H05K3/4007 , H05K3/4682 , H05K2201/0376 , H05K2201/09045 , H05K2201/10674 , H05K2203/0723 , H05K2203/1461 , H01L2924/00
摘要： The present disclosure relates to a semiconductor substrate and a method for making the same. The semiconductor substrate includes an insulation layer, a first circuit layer, a second circuit layer, a plurality of conductive vias and a plurality of bumps. The first circuit layer is embedded in a first surface of the insulation layer, and exposed from the first surface of the insulation layer. The second circuit layer is located on a second surface of the insulation layer and electrically connected to the first circuit layer through the conductive vias. The bumps are directly located on part of the first circuit layer, where the lattice of the bumps is the same as that of the first circuit layer.
摘要翻译： 本公开涉及一种半导体衬底及其制造方法。 半导体衬底包括绝缘层，第一电路层，第二电路层，多个导电通孔和多个凸块。 第一电路层嵌入绝缘层的第一表面，并从绝缘层的第一表面露出。 第二电路层位于绝缘层的第二表面上，并通过导电通孔与第一电路层电连接。 凸块直接位于第一电路层的一部分上，其中凸块的晶格与第一电路层的晶格相同。
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公开(公告)号：US08877323B2
公开(公告)日：2014-11-04
申请号：US12956209
申请日：2010-11-30
申请人： Tsung-Chieh Chang , Ching-Hung Ko , Mu-Jia Liu
发明人： Tsung-Chieh Chang , Ching-Hung Ko , Mu-Jia Liu
CPC分类号： B32B7/14 , B32B17/06 , B32B37/12 , B32B2313/00 , B32B2457/14 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L2224/10135 , H01L2224/11436 , H01L2224/1163 , H01L2224/13082 , H01L2224/13099 , H01L2224/1319 , H01L2224/1601 , H01L2224/16225 , H01L2224/16227 , H01L2224/81139 , H01L2224/81191 , H01L2224/81201 , H01L2224/8134 , H01L2224/94 , Y10T156/10 , Y10T428/24562 , Y10T428/24744 , Y10T428/24826 , H01L2224/81 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor structure is provided. The semiconductor structure includes a first substrate, a second substrate opposite to the first substrate, a plurality of spacers disposed between the first substrate and the second substrate, and an adhesive material bonded with the first substrate and the second substrate within the two adjacent spacers. The invention also provides a method for fabricating the semiconductor structure.
摘要翻译： 提供半导体结构。 半导体结构包括第一基板，与第一基板相对的第二基板，设置在第一基板和第二基板之间的多个间隔件，以及在两个相邻间隔件内与第一基板和第二基板结合的粘合材料。 本发明还提供了一种制造半导体结构的方法。
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公开(公告)号：US20240105670A1
公开(公告)日：2024-03-28
申请号：US17952348
申请日：2022-09-26
申请人： CYNTEC CO., LTD.
发明人： Chi-Hung Su
CPC分类号： H01L24/73 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/27 , H01L24/29 , H01Q1/48 , H01Q9/0407 , H01L24/16 , H01L24/32 , H01L2224/0332 , H01L2224/0363 , H01L2224/05552 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/1132 , H01L2224/1163 , H01L2224/11825 , H01L2224/13012 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/13582 , H01L2224/13609 , H01L2224/13611 , H01L2224/13613 , H01L2224/13616 , H01L2224/13618 , H01L2224/13639 , H01L2224/13647 , H01L2224/13655 , H01L2224/16227 , H01L2224/27462 , H01L2224/2763 , H01L2224/29012 , H01L2224/29034 , H01L2224/29082 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29118 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/32227 , H01L2224/73103 , H01L2924/0132 , H01L2924/014 , H01L2924/1421 , H01L2924/1423
摘要： An electronic component with high coplanarity, including a body with a functional circuit and a mounting plane, a first electrode with a first area deposited on the mounting plane, and a second electrode with a second area deposited on the mounting plane, wherein the first area is larger than the second area, and the first electrode and the second electrode includes a conductive layer and at least one first plating layer over the conductive layer, and a thickness of the conductive layer of the first electrode is smaller than a thickness of the conductive layer of the second electrode, and a thickness of the first plating layer of the first electrode is larger than a thickness of the first plating layer of the second electrode.
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公开(公告)号：US20140367837A1
公开(公告)日：2014-12-18
申请号：US14303371
申请日：2014-06-12
发明人： Chun-Che LEE , Yuan-Chang SU , Wen-Chi CHENG , Guo-Cheng LIAO , Yi-Chuan DING
IPC分类号： H01L23/00
CPC分类号： H01L24/11 , H01L23/13 , H01L23/498 , H01L23/49827 , H01L24/13 , H01L24/14 , H01L24/16 , H01L2224/11019 , H01L2224/11622 , H01L2224/1163 , H01L2224/13147 , H01L2224/14104 , H01L2224/16225 , H01L2924/12042 , H05K3/108 , H05K3/3436 , H05K3/4007 , H05K3/4682 , H05K2201/0376 , H05K2201/09045 , H05K2201/10674 , H05K2203/0723 , H05K2203/1461 , H01L2924/00
摘要： The present disclosure relates to a semiconductor substrate and a method for making the same. The semiconductor substrate includes an insulation layer, a first circuit layer, a second circuit layer, a plurality of conductive vias and a plurality of bumps. The first circuit layer is embedded in a first surface of the insulation layer, and exposed from the first surface of the insulation layer. The second circuit layer is located on a second surface of the insulation layer and electrically connected to the first circuit layer through the conductive vias. The bumps are directly located on part of the first circuit layer, where the lattice of the bumps is the same as that of the first circuit layer.
摘要翻译： 本公开涉及一种半导体衬底及其制造方法。 半导体衬底包括绝缘层，第一电路层，第二电路层，多个导电通孔和多个凸块。 第一电路层嵌入绝缘层的第一表面，并从绝缘层的第一表面露出。 第二电路层位于绝缘层的第二表面上，并通过导电通孔与第一电路层电连接。 凸块直接位于第一电路层的一部分上，其中凸块的晶格与第一电路层的晶格相同。
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公开(公告)号：US20120135201A1
公开(公告)日：2012-05-31
申请号：US12956209
申请日：2010-11-30
申请人： Tsung-Chieh Chang , Ching-Hung Ko , Mu-Jia Liu
发明人： Tsung-Chieh Chang , Ching-Hung Ko , Mu-Jia Liu
CPC分类号： B32B7/14 , B32B17/06 , B32B37/12 , B32B2313/00 , B32B2457/14 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L2224/10135 , H01L2224/11436 , H01L2224/1163 , H01L2224/13082 , H01L2224/13099 , H01L2224/1319 , H01L2224/1601 , H01L2224/16225 , H01L2224/16227 , H01L2224/81139 , H01L2224/81191 , H01L2224/81201 , H01L2224/8134 , H01L2224/94 , Y10T156/10 , Y10T428/24562 , Y10T428/24744 , Y10T428/24826 , H01L2224/81 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor structure is provided. The semiconductor structure includes a first substrate, a second substrate opposite to the first substrate, a plurality of spacers disposed between the first substrate and the second substrate, and an adhesive material bonded with the first substrate and the second substrate within the two adjacent spacers. The invention also provides a method for fabricating the semiconductor structure.
摘要翻译： 提供半导体结构。 半导体结构包括第一基板，与第一基板相对的第二基板，设置在第一基板和第二基板之间的多个间隔件，以及在两个相邻间隔件内与第一基板和第二基板结合的粘合材料。 本发明还提供了一种制造半导体结构的方法。
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