公开(公告)号：US20240310819A1

公开(公告)日：2024-09-19

申请号：US18679298

申请日：2024-05-30

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  Elizabeth Neville ,  Umesh Madhav Kelkar ,  Mark R. Denome ,  Prashanth Kothnur ,  Karthik Ramanathan ,  Kartik Shah ,  Orlando Trejo ,  Sergey Meirovich

IPC: G05B19/418 ,  G05B13/02 ,  H01L21/67

CPC classification number: G05B19/41885 ,  G05B13/027 ,  G05B2219/32335 ,  G05B2219/32359 ,  G05B2219/45031 ,  H01L21/67276

Abstract: A first selection of a first fabrication process and/or first manufacturing equipment to perform manufacturing operations of the first fabrication process is received. The first selection is input into a digital replica of the first manufacturing equipment, where the digital replica outputs physical conditions of the first fabrication process. Environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process is determined. A modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment is determined. Applying the modification to the first fabrication and/or providing the modification for display by a graphical user interface (GUI) is performed.

公开(公告)号：US10790121B2

公开(公告)日：2020-09-29

申请号：US15947393

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Kumar ,  Prashanth Kothnur ,  Sidharth Bhatia ,  Anup Kumar Singh ,  Vivek Bharat Shah ,  Ganesh Balasubramanian ,  Changgong Wang

IPC: H01J37/32

Abstract: Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. The apparatus for reduced particle contamination includes a chamber body, a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip. To avoid depositing the particles on the substrate being processed when the plasma is de-energized, the edge ring shifts the high plasma density zone away from the edge area of the substrate.

公开(公告)号：US09831074B2

公开(公告)日：2017-11-28

申请号：US14062627

申请日：2013-10-24

Applicant: Applied Materials, Inc.

Inventor： Joung Joo Lee ,  Guojun Liu ,  Wei W. Wang ,  Prashanth Kothnur

IPC: H01J37/34 ,  C23C14/22 ,  C23C14/04 ,  C23C14/34

CPC classification number: H01J37/3447 ,  C23C14/042 ,  C23C14/22 ,  C23C14/3471 ,  H01J37/3426

Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.

公开(公告)号：US20250053715A1

公开(公告)日：2025-02-13

申请号：US18927112

申请日：2024-10-25

Applicant: Applied Materials, Inc.

Inventor： Preetham Prahallada Rao ,  Prashanth Kothnur

IPC: G06F30/27 ,  G06F18/214 ,  G06F111/06 ,  G06N20/20 ,  H01L21/67

Abstract: A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.

公开(公告)号：US11505863B2

公开(公告)日：2022-11-22

申请号：US16854893

申请日：2020-04-21

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Roey Shaviv ,  Prashanth Kothnur ,  Satish Radhakrishnan ,  Xiaozhou Che

IPC: C23C16/448 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  C23C14/00 ,  C23C16/00

Abstract: Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

公开(公告)号：US20210017639A1

公开(公告)日：2021-01-21

申请号：US16930794

申请日：2020-07-16

Applicant: Applied Materials, Inc.

Inventor： Alexander Jansen ,  Keith A. Miller ,  Prashanth Kothnur ,  Martin Riker ,  David Gunther ,  Emily Schooley

IPC: C23C14/35 ,  C23C14/34

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

公开(公告)号：US09620339B2

公开(公告)日：2017-04-11

申请号：US13836328

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Anantha K. Subramani ,  Tza-Jing Gung ,  Prashanth Kothnur ,  Hanbing Wu

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC classification number: C23C14/3414 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/345

Abstract: Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

公开(公告)号：US20150279635A1

公开(公告)日：2015-10-01

申请号：US14606367

申请日：2015-01-27

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Deepak Jadhav ,  Ashish Goel ,  Hanbing Wu ,  Prashanth Kothnur ,  Chi Hong Ching

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3408 ,  C23C16/34 ,  C23C16/405 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447

Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Abstract translation: 沉积系统及其操作方法包括：阴极; 阴极下方的护罩; 在阴极下面的旋转屏蔽件，用于使阴极暴露于护罩并通过旋转屏蔽的屏蔽孔; 以及用于产生在所述旋转底座上形成载体的材料的旋转底座，其中所述材料具有小于所述材料和所述阴极的厚度的1％的不均匀约束，所述材料和所述阴极在所述阴极和所述载体之间具有角度。

公开(公告)号：US12131105B2

公开(公告)日：2024-10-29

申请号：US17476408

申请日：2021-09-15

Applicant: Applied Materials, Inc.

Inventor： Preetham Prahallada Rao ,  Prashanth Kothnur

IPC: G06F30/27 ,  G06F18/214 ,  G06N20/20 ,  H01L21/67 ,  G06F111/06

CPC classification number: G06F30/27 ,  G06F18/214 ,  G06N20/20 ,  H01L21/67011 ,  H01L21/67248 ,  G06F2111/06

Abstract: A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.

公开(公告)号：US12043895B2

公开(公告)日：2024-07-23

申请号：US18072711

申请日：2022-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Lerner ,  Prashanth Kothnur ,  Roey Shaviv ,  Satish Radhakrishnan

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45525 ,  C23C16/4557 ,  C23C16/45574

Abstract: Methods of introducing precursors through a segmented showerhead are provided herein. In some embodiments, a method of introducing precursors through a segmented showerhead having a plurality of gas delivery portions that are fluidly isolated includes heating a first gas delivery portion to a first temperature; and simultaneously heating a second gas delivery portion to a second temperature different than the first temperature, wherein each of the first and second gas delivery portions (i) have a wedge shaped body that defines a plenum, (ii) are coplanar, and (iii) together form a showerhead having a circular shape.