公开(公告)号：US20120196047A1

公开(公告)日：2012-08-02

申请号：US13016912

申请日：2011-01-28

Applicant: Cheng-Hui Shen ,  Zhimin Wan

Inventor： Cheng-Hui Shen ,  Zhimin Wan

IPC: C23C14/48 ,  G06G7/62 ,  G06F17/10 ,  B05C11/00

CPC classification number: H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

Abstract: To select a relative velocity profile to be used in scanning an actual work piece with an ion implant beam of an ion implantation tool, the implantation of a virtual work piece is simulated. A dose distribution is calculated across the virtual work piece based on an implant beam profile and a relative velocity profile. A new relative velocity profile is then determined based on the calculated dose distribution and the relative velocity profile used in calculating the dose distribution. A new dose distribution is then calculated using the new relative velocity profile. A new relative velocity profile is determined and a corresponding new dose distribution is calculated iteratively until the new dose distribution meets one or more predetermined criteria. The new relative velocity profile is stored as the selected relative velocity profile when the new dose distribution meets the one or more predetermined criteria.

Abstract translation: 为了选择用离子注入工具的离子注入光束扫描实际工件所使用的相对速度分布，模拟了虚拟工件的注入。 基于植入物轮廓和相对速度分布，跨虚拟工件计算剂量分布。 然后基于计算的剂量分布和用于计算剂量分布的相对速度分布来确定新的相对速度分布。 然后使用新的相对速度分布计算新的剂量分布。 确定新的相对速度分布，并且迭代地计算相应的新剂量分布，直到新的剂量分布满足一个或多个预定标准。 当新剂量分布满足一个或多个预定标准时，新的相对速度分布被存储为所选择的相对速度分布。

公开(公告)号：US07750323B1

公开(公告)日：2010-07-06

申请号：US12465189

申请日：2009-05-13

Applicant: Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

Inventor： Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

IPC: H01J37/317 ,  H01J37/08 ,  H01L21/265

CPC classification number: H01J37/3172 ,  H01J37/3023 ,  H01J2237/043 ,  H01J2237/045 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The first doping density is larger than the second doping density. Thereafter, the first portion is scanned by an ion beam with a first scanning parameter value, and the second portion is scanned by the ion beam with a second scanning parameter value. The first scanning parameter value can be a first scan velocity, and the second scanning parameter value can be a second scan velocity different than the first scan velocity. Alternatively, the first scanning parameter value can be a first beam current, and the second scanning parameter value can be a second beam current different than the first beam current.

Abstract translation: 提供一种用于植入晶片的离子注入机和方法，其中该方法包括以下步骤。 首先，晶片至少具有需要第一掺杂密度的第一部分，并且提供需要第二掺杂密度的第二部分。 第一掺杂密度大于第二掺杂密度。 此后，通过具有第一扫描参数值的离子束扫描第一部分，并且用第二扫描参数值用离子束扫描第二部分。 第一扫描参数值可以是第一扫描速度，并且第二扫描参数值可以是不同于第一扫描速度的第二扫描速度。 或者，第一扫描参数值可以是第一束电流，并且第二扫描参数值可以是不同于第一束电流的第二束电流。

公开(公告)号：US08890506B2

公开(公告)日：2014-11-18

申请号：US13227425

申请日：2011-09-07

Applicant: Peter M. Kopalidis ,  Zhimin Wan

Inventor： Peter M. Kopalidis ,  Zhimin Wan

IPC: G01N27/00 ,  G01R19/00 ,  G01N27/62

CPC classification number: G01N27/62 ,  G01R19/0061

Abstract: Techniques for measuring ion beam current, especially for measuring low energy ion beam current, are disclosed. The technique may be realized as an ion beam current measurement apparatus having at least a planar Faraday cup and a voltage assembly. The planar Faraday cup is located close to an inner surface of a chamber wall, and intersects an ion beam path. The voltage assembly is located outside a chamber having the chamber wall. Therefore, by properly adjusting the electric voltage applied on the planar Faraday cup by the voltage assembly, some undesired charged particles may be adequately suppressed. Further, the planar Faraday cup may surround an opening of a non-planar Faraday cup which may be any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of the planar Faraday cup on the ion beam path.

Abstract translation: 公开了用于测量离子束电流的技术，特别是用于测量低能量离子束电流的技术。 该技术可以被实现为具有至少一个平面法拉第杯和电压组件的离子束电流测量装置。 平面法拉第杯位于靠近室壁的内表面并与离子束路相交。 电压组件位于具有室壁的室外。 因此，通过适当地调整通过电压组件施加在平面法拉第杯上的电压，可以充分抑制一些不期望的带电粒子。 此外，平面法拉第杯可以围绕可以是任何常规法拉第杯的非平面法拉第杯的开口。 因此，可以通过离子束路径上的平面法拉第杯的较大的横截面面积良好地接收和测量整个离子束。

公开(公告)号：US06918351B2

公开(公告)日：2005-07-19

申请号：US10133140

申请日：2002-04-26

Applicant: Jiong Chen ,  Zhimin Wan

Inventor： Jiong Chen ,  Zhimin Wan

IPC: H01J37/317 ,  C23C16/00 ,  H01G37/317

CPC classification number: H01J37/3171 ,  H01J2237/0041

Abstract: This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.

Abstract translation: 本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。 离子注入装置包括紧邻离子提取装置设置的离子束扫掠和偏转装置。 离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。 质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。 施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。

公开(公告)号：US08669539B2

公开(公告)日：2014-03-11

申请号：US12748877

申请日：2010-03-29

Applicant: Zhimin Wan ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

Inventor： Zhimin Wan ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

IPC: H01J37/317 ,  H01J37/02

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US08304330B2

公开(公告)日：2012-11-06

申请号：US13351334

申请日：2012-01-17

Applicant: John D. Pollock ,  Zhimin Wan ,  Erik Collart

Inventor： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC: H01L21/425

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract translation: 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始注入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US09009939B2

公开(公告)日：2015-04-21

申请号：US12479288

申请日：2009-06-05

Applicant: Peter Mok ,  Ko-Chuan Jen ,  Zhimin Wan

Inventor： Peter Mok ,  Ko-Chuan Jen ,  Zhimin Wan

IPC: B25B27/14 ,  H01J37/08 ,  H01L21/687 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67

CPC classification number: H01L21/68764 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/204 ,  H01L21/67213 ,  Y10T29/53961

Abstract: A system and a method for moving a wafer during scanning the wafer by an ion beam. The proposed system includes an extendable/retractable arm, a holding apparatus and a driving apparatus. At least a length of the extendable/retractable arm is adjustable. The holding apparatus is capable of holding a wafer and is fixed on a specific portion of the extendable/retractable arm. Furthermore, the driving apparatus is capable of extending and/or retracting the extendable/retractable arm, such that the holding apparatus is moved together with the specific portion. In addition, the proposed method includes the following steps. First, hold the wafer by a holding apparatus fixed on a specific portion of an extendable/retractable arm. After that, adjust a length of the extendable/retractable. Therefore, the holding apparatus, i.e. the wafer, can be moved by the extension/retraction of the extendable/retractable arm.

Abstract translation: 一种用于在通过离子束扫描晶片期间移动晶片的系统和方法。 所提出的系统包括可伸缩臂，保持装置和驱动装置。 可伸缩臂的至少一段长度是可调节的。 保持装置能够保持晶片并固定在可伸缩臂的特定部分上。 此外，驱动装置能够延伸和/或缩回可伸缩臂，使得保持装置与特定部分一起移动。 此外，所提出的方法包括以下步骤。 首先，通过固定在可伸缩臂的特定部分上的保持装置来保持晶片。 之后，调整可伸缩的长度。 因此，保持装置即晶片可以通过伸缩臂的伸缩来移动。

公开(公告)号：US08039374B2

公开(公告)日：2011-10-18

申请号：US12727573

申请日：2010-03-19

Applicant: John D. Pollock ,  Zhimin Wan ,  Erik Collart

Inventor： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC: H01L21/425

CPC classification number: H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

Abstract translation: 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。

公开(公告)号：US07745804B1

公开(公告)日：2010-06-29

申请号：US12371182

申请日：2009-02-13

Applicant: Zhimin Wan

Inventor： Zhimin Wan

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/3023 ,  H01J2237/20214 ,  H01J2237/24528 ,  H01J2237/3045 ,  H01J2237/31701 ,  H01L21/265

Abstract: An ion implantation method for achieving angular uniformity throughout a workpiece and application thereof are provided. The ion beam has at least one beamlet striking the workpiece surface with corresponding incident angles. The workpiece is mapped to an imaginary planar coordinate system. The incident angle of a center beamlet of the ion beam has a projection on the coordinate system forming a projection angle with an axis thereof. A workpiece orientation of the workpiece is adjusted based on the projection angle such that the contribution of each beamlet to the overall ion beam intensity upon striking the workpiece surface is rendered substantially the same from respective directions of each of the coordinate axes.

Abstract translation: 提供了一种用于实现整个工件的角均匀性的离子注入方法及其应用。 离子束具有至少一个小射束以相应的入射角撞击工件表面。 工件被映射到虚拟平面坐标系。 离子束的中心子束的入射角在坐标系上具有与其轴的投影角度的投影。 基于投影角度来调整工件的工件取向，使得每个子束对冲击工件表面的整个离子束强度的贡献从每个坐标轴的各个方向变得基本相同。

公开(公告)号：US06806479B1

公开(公告)日：2004-10-19

申请号：US10641219

申请日：2003-08-13

Applicant: Zhimin Wan ,  Jiong Chen ,  John D. Pollock

Inventor： Zhimin Wan ,  Jiong Chen ,  John D. Pollock

IPC: H01J3720

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/201 ,  H01J2237/20214

Abstract: A method to rotate individual pad of a batch disk to an implant angle and lock them in place, with the pad surface having conical or near conical surface to minimize the implant angle variation across a wafer on the pad for both tilt angle and twist angle, at large tilt angle implant. The implanter includes a disk with multiple attached pads that can hold substrates securely when the hub is at rest or rotates. The disk rotates around its spin axis, which moves laterally at a programmed speed profile so that all substrates on the hub can get evenly touched by the fixed ion beam. The pad rotation axis is at an angle with the disk spin axis, and the angle is preferable 90 degrees. The nominal of the pad surface is at an angle, i.e., a tilt angle, relative to the incident ion beam. A rotation mechanism is applied to each individual pad to rotate the pad to the desired tilt angle. A locking mechanism is applied to each individual pad assembly to lock the pad at the desired tilt angle with minimum angle variation under high centrifugal force during fast disk spin. The locking mechanism includes: a) add brake to the rotation mechanism in the pad assembly so that the pad cannot rotate due to mechanical friction force or lock-key. B) use motor to hold the pad assembly. The sum of the friction torque and the motor holding torque should be larger than the centrifugal torque. A torque balancing mechanism is applied to pad mechanical design to minimize the total pad rotation torque under centrifugal force during fast disk spin by adding mass to counter balance the original wafer pad mass.

Abstract translation: 一种将批盘的单个垫片旋转到植入角度并将其锁定在适当位置的方法，其中垫表面具有圆锥形或近圆锥形表面，以最小化用于倾斜角度和扭转角度的衬垫上的晶片上的植入角度变化， 在大倾角植入。 注入机包括具有多个附接垫的盘，当轮毂处于静止或转动时，该盘可以牢固地保持衬底。 磁盘围绕其旋转轴旋转，其以编程的速度轮廓横向移动，使得轮毂上的所有基底可以被固定的离子束均匀地接触。 衬垫旋转轴与盘旋转轴成一定角度，该角度优选为90度。 焊盘表面的标称是相对于入射离子束成一定角度，即倾斜角。 旋转机构被施加到每个单独的垫以将垫旋转到期望的倾斜角。 将锁定机构应用于每个单独的垫组件，以在快速盘旋转期间在高离心力下以最小的角度变化将垫锁定在期望的倾斜角度。 该锁定机构包括：a）向衬垫组件中的旋转机构添加制动器，使得垫片由于机械摩擦力或锁定键不能旋转。 B）使用马达来固定垫组件。 摩擦转矩和电机保持转矩的总和应大于离心力矩。 应用扭矩平衡机构进行垫片机械设计，以通过增加质量来平衡原始晶片垫块，从而在快速盘旋转期间在离心力下最小化总垫片旋转扭矩。