公开(公告)号：US11825286B2

公开(公告)日：2023-11-21

申请号：US17764742

申请日：2020-12-22

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Benjamin Wickham ,  Ian Friel

IPC: C23C16/27 ,  H04R7/12 ,  C23C16/01 ,  H04R31/00

CPC classification number: H04R7/127 ,  C23C16/01 ,  C23C16/271 ,  C23C16/272 ,  C23C16/274 ,  H04R31/003 ,  H04R2207/021 ,  H04R2307/023

Abstract: A non-planar chemical vapour deposition polycrystalline diamond body has a dome body having an apex and an outer periphery. The dome body has an average radius of curvature in a range of 4 mm to 25 mm and a maximum linear dimension at the outer periphery of the dome body of no more than 26 mm. The average radius of curvature is no less than 0.6 times the maximum linear dimension at the outer periphery. A method of fabricating the non-planar diamond body is also disclosed.

公开(公告)号：US20150240382A1

公开(公告)日：2015-08-27

申请号：US14426727

申请日：2013-09-13

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Harpreet Kaur Dhillon ,  Ian Friel ,  Daniel James Twitchen ,  Sarah Louise Geoghegan ,  Helen Jennifer Gallon ,  Neil Perkins ,  Philip Maurice Martineau

IPC: C30B29/04 ,  C30B25/16

CPC classification number: C30B29/04 ,  C30B25/02 ,  C30B25/165 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/26

Abstract: A coloured single crystal CVD synthetic diamond material comprising: a plurality of layers, wherein the plurality of layers includes at least two sets of layers which differ in terms of their defect composition and colour, wherein defect type, defect concentration, and layer thickness for each of the at least two sets of layers is such that if the coloured single crystal CVD diamond material is fabricated into a round brilliant cut diamond comprising a table and a culet, and having a table to culet depth greater than 1 mm, the round brilliant cut diamond comprises a uniform colour as viewed by naked human eye under standard ambient viewing conditions in at least a direction through the table to the culet.

Abstract translation: 一种着色的单晶CVD合成金刚石材料，包括：多个层，其中所述多个层包括至少两组在其缺陷组成和颜色方面不同的层，其中每个层的缺陷类型，缺陷浓度和层厚度 所述至少两组层是这样的，即如果着色的单晶CVD金刚石材料制成圆形明亮的切割金刚石，其包括台和底部，并且具有大于1mm的底部深度的台面，则圆形切割 金刚石在标准环境观察条件下至少在通过工作台至底部的方向上由裸眼观察到均匀的颜色。

公开(公告)号：US11746436B2

公开(公告)日：2023-09-05

申请号：US14426727

申请日：2013-09-13

Applicant: Element Six Technologies Limited

Inventor： Harpreet Kaur Dhillon ,  Ian Friel ,  Daniel James Twitchen ,  Sarah Louise Geoghegan ,  Helen Jennifer Gallon ,  Neil Perkins ,  Philip Maurice Martineau

IPC: C30B29/04 ,  C30B25/16 ,  C30B25/02

CPC classification number: C30B29/04 ,  C30B25/02 ,  C30B25/165 ,  Y10T428/2495 ,  Y10T428/24942 ,  Y10T428/26

Abstract: A coloured single crystal CVD synthetic diamond material comprising: a plurality of layers, wherein the plurality of layers includes at least two sets of layers which differ in terms of their defect composition and colour, wherein defect type, defect concentration, and layer thickness for each of the at least two sets of layers is such that if the coloured single crystal CVD diamond material is fabricated into a round brilliant cut diamond comprising a table and a culet, and having a table to culet depth greater than 1 mm, the round brilliant cut diamond comprises a uniform colour as viewed by naked human eye under standard ambient viewing conditions in at least a direction through the table to the culet.

公开(公告)号：US20220369038A1

公开(公告)日：2022-11-17

申请号：US17764742

申请日：2020-12-22

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Benjamin Wickham ,  Ian Friel

IPC: H04R7/12 ,  H04R31/00 ,  C23C16/01 ,  C23C16/27

Abstract: A non-planar chemical vapour deposition polycrystalline diamond body has a dome body having an apex and an outer periphery. The dome body has an average radius of curvature in a range of 4 mm to 25 mm and a maximum linear dimension at the outer periphery of the dome body of no more than 26 mm. The average radius of curvature is no less than 0.6 times the maximum linear dimension at the outer periphery. A method of fabricating the non-planar diamond body is also disclosed.

公开(公告)号：US10734198B2

公开(公告)日：2020-08-04

申请号：US15304366

申请日：2015-06-10

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： John Robert Brandon ,  Ian Friel ,  Michael Andrew Cooper ,  Geoffrey Alan Scarsbrook ,  Ben Llewlyn Green

IPC: H01J37/32 ,  C30B29/04 ,  C23C16/27 ,  C23C16/511 ,  C30B25/10 ,  C23C16/458 ,  C30B25/20

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

公开(公告)号：US10011491B2

公开(公告)日：2018-07-03

申请号：US14685553

申请日：2015-04-13

Applicant: Element Six Technologies Limited

Inventor： Chee-Leong Lee ,  Erdan Gu ,  Geoffrey Alan Scarsbrook ,  Ian Friel ,  Martin David Dawson

IPC: C23C16/27 ,  C01B31/06 ,  C30B25/10 ,  C30B25/20 ,  C30B29/04 ,  G01N27/30 ,  H01L21/02 ,  H01L21/04 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  G01N21/87 ,  G01N21/95 ,  H01J37/32 ,  C01B32/28

CPC classification number: C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

Abstract: A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.

公开(公告)号：US12065756B2

公开(公告)日：2024-08-20

申请号：US18143557

申请日：2023-05-04

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Ian Friel ,  Katharine Louise Atkinson ,  Daniel James Twitchen

IPC: C30B25/16 ,  C30B25/10 ,  C30B25/20 ,  C30B29/04

CPC classification number: C30B25/205 ,  C30B25/105 ,  C30B25/16 ,  C30B29/04

Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

公开(公告)号：US11643750B2

公开(公告)日：2023-05-09

申请号：US17258080

申请日：2019-07-05

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Ian Friel ,  Katharine Louise Atkinson ,  Daniel James Twitchen

IPC: C30B25/16 ,  C30B25/20 ,  C30B25/10 ,  C30B29/04

CPC classification number: C30B25/205 ,  C30B25/105 ,  C30B25/16 ,  C30B29/04

Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.