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公开(公告)号：US10734198B2
公开(公告)日：2020-08-04
申请号：US15304366
申请日：2015-06-10
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor： John Robert Brandon , Ian Friel , Michael Andrew Cooper , Geoffrey Alan Scarsbrook , Ben Llewlyn Green
IPC: H01J37/32 , C30B29/04 , C23C16/27 , C23C16/511 , C30B25/10 , C23C16/458 , C30B25/20
Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.
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公开(公告)号：US10011491B2
公开(公告)日：2018-07-03
申请号：US14685553
申请日：2015-04-13
Applicant: Element Six Technologies Limited
Inventor： Chee-Leong Lee , Erdan Gu , Geoffrey Alan Scarsbrook , Ian Friel , Martin David Dawson
IPC: C23C16/27 , C01B31/06 , C30B25/10 , C30B25/20 , C30B29/04 , G01N27/30 , H01L21/02 , H01L21/04 , H01L29/04 , H01L29/16 , H01L29/167 , H01L29/36 , G01N21/87 , G01N21/95 , H01J37/32 , C01B32/28
CPC classification number: C01B32/28 , C23C16/27 , C23C16/274 , C23C16/278 , C30B25/105 , C30B25/20 , C30B29/04 , G01N21/87 , G01N21/95 , G01N27/308 , G01N2201/0636 , H01J37/321 , H01J2237/08 , H01J2237/3341 , H01L21/02104 , H01L21/02376 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L21/02634 , H01L21/041 , H01L29/045 , H01L29/1602 , H01L29/167 , H01L29/36 , Y10T428/24355
Abstract: A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.
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公开(公告)号：US10125434B2
公开(公告)日：2018-11-13
申请号：US15374071
申请日：2016-12-09
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor： Herman Philip Godfried , Geoffrey Alan Scarsbrook , Daniel James Twitchen , Evert Pieter Houwman , Wilhemus Gertruda Maria Nelissen , Andrew John Whitehead , Clive Edward Hall , Philip Maurice Martineau
IPC: C01B31/06 , C30B29/04 , C30B25/02 , G02B1/00 , C30B9/00 , C30B19/02 , C30B25/16 , C30B25/20 , C30B33/12 , G02B1/02 , C30B33/02 , C01B32/25
Abstract: A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
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Patent Agency Ranking
公开(公告)号：US09103050B2
公开(公告)日：2015-08-11
申请号：US13838112
申请日：2013-03-15
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor： Geoffrey Alan Scarsbrook , Philip Maurice Martineau , John Lloyd Collins , Ricardo Simon Sussmann , Bärbel Susanne Charlotte Dorn , Andrew John Whitehead , Daniel James Twitchen
CPC classification number: C30B29/04 , C30B25/00 , C30B25/105 , Y10T428/263 , Y10T428/30
Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
Abstract translation: 通过CVD制备并具有一种或多种电子特性的单晶金刚石; 使钻石适合电子应用。 还提供了制造单晶CVD金刚石的方法。
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公开(公告)号：US10851471B2
公开(公告)日：2020-12-01
申请号：US16165868
申请日：2018-10-19
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor： Herman Philip Godfried , Geoffrey Alan Scarsbrook , Daniel James Twitchen , Evert Pieter Houwman , Wilhelmus Gertruda Maria Nelissen , Andrew John Whitehead , Clive Edward Hall , Philip Maurice Martineau
IPC: C01B31/06 , C30B29/04 , C30B25/20 , C30B33/02 , C01B32/25 , C01B32/26 , C30B25/02 , G02B1/00 , C30B9/00 , C30B19/02 , C30B25/16 , C30B33/12 , G02B1/02
Abstract: A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
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公开(公告)号：US10240254B2
公开(公告)日：2019-03-26
申请号：US15507539
申请日：2015-11-02
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor： Andrew Michael Bennett , Laura Anne Hutton , Geoffrey Alan Scarsbrook
IPC: C30B25/20 , B23K15/00 , B23K15/08 , C23C16/27 , C30B29/04 , C30B33/06 , B28D1/22 , B23K26/146 , B23K26/38 , B23K26/402 , C30B33/02 , C30B33/04 , B23K103/00
Abstract: A method of fabricating plates of super-hard material and cutting techniques suitable for such a method. A method of fabricating a plate (14) of super-hard material, the method comprising: •providing a substrate (4) have a lateral dimension of at least 40 mm; •growing a layer of super-hard material on the substrate (4) using a chemical vapor deposition process; and •slicing one or more plates (14) of super-hard material from the substrate using a collimated cutting beam (8), the or each plate of super-hard material (14) having a lateral dimension of at least 40 mm, wherein the collimated cutting beam (8) is collimated with a half angle divergence of no more than 5 degrees.
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公开(公告)号：US09816202B2
公开(公告)日：2017-11-14
申请号：US15298380
申请日：2016-10-20
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Abstract: A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
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公开(公告)号：US09551090B2
公开(公告)日：2017-01-24
申请号：US14462690
申请日：2014-08-19
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor： Herman Philip Godfried , Geoffrey Alan Scarsbrook , Daniel James Twitchen , Evert Pieter Houwman , Wilhelmus Gertruda Maria Nelissen , Andrew John Whitehead , Clive Edward Hall , Philip Maurice Martineau
CPC classification number: C30B29/04 , C01B32/25 , C01P2006/60 , C01P2006/80 , C30B9/00 , C30B19/02 , C30B25/02 , C30B25/165 , C30B25/20 , C30B25/205 , C30B33/02 , C30B33/12 , G02B1/002 , G02B1/02
Abstract: A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
Abstract translation: 适用于光学元件或元件的CVD单晶金刚石材料。 它适用于各种各样的光学应用，例如光学窗口，激光窗口，光反射器，光折射器和光栅以及标准具。 CVD金刚石材料通过CVD方法在受控低水平的氮气存在下产生，以控制晶体缺陷的发展，从而获得具有光学应用关键特性的金刚石材料。
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