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    TEMPORARY BONDING LAMINATES FOR USED IN MANUFACTURE OF SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES
    5.
    发明申请
    TEMPORARY BONDING LAMINATES FOR USED IN MANUFACTURE OF SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES 有权
    用于制造半导体器件的临时粘结层压板及制造半导体器件的方法

    公开(公告)号：US20160104635A1

    公开(公告)日：2016-04-14

    申请号：US14865353

    申请日：2015-09-25

    Applicant: FUJIFILM Corporation

    Inventor： Ichiro KOYAMA ,  Yu IWAI

    IPC: H01L21/683 ,  H01L21/324

    CPC classification number: H01L21/6835 ,  C09J7/40 ,  C09J2201/622 ,  C09J2203/326 ,  H01L21/324 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

    Abstract: Provided is temporary bonding laminates for used in a manufacture of semiconductor devices, by which a member to be processed can be temporarily supported securely and readily during a mechanical or chemical process of the member to be processed and then the processed member can be readily released from the temporary support without damaging the processed member even after a high temperature process, and processes for manufacturing semiconductor devices. The temporary bonding laminate includes comprising (A) a release layer and (B) an adhesive layer wherein the release layer (A) comprises (a1) a resin 1 having a softening point of 200° C. or more and (a2) a resin 2; the resin 2 after curing has capable of being dissolved at 5% by mass or more, at 25° C., in at least one of solvents selected from hexane and the like.

    Abstract translation: 本发明提供用于制造半导体器件的临时粘合层压体，通过该临时粘合层压体，可以在待加工构件的机械或化学过程中可靠且容易地暂时支撑待加工构件，然后处理构件可以容易地从 临时支撑体，即使在高温处理之后也不会损坏处理的构件，以及用于制造半导体器件的工艺。 临时粘合层叠体包括（A）剥离层和（B）粘合剂层，其中剥离层（A）包含（a1）软化点为200℃以上的树脂1和（a2）树脂 2; 固化后的树脂2能够在25℃下，在选自己烷等的至少一种溶剂中溶解5质量％以上。

    METHOD FOR LITHOGRAPHIC PATTERNING OF ORGANIC LAYERS
    6.
    发明申请
    METHOD FOR LITHOGRAPHIC PATTERNING OF ORGANIC LAYERS 审中-公开
    有机层的图形化方法

    公开(公告)号：US20160172595A1

    公开(公告)日：2016-06-16

    申请号：US15053426

    申请日：2016-02-25

    Applicant: FUJIFILM Corporation

    Inventor： Pawel MALINOWSKI ,  Atsushi NAKAMURA ,  Yu IWAI

    IPC: H01L51/00 ,  H01L51/42

    CPC classification number: H01L51/0018 ,  H01L51/0036 ,  H01L51/0047 ,  H01L51/0097 ,  H01L51/0508 ,  H01L51/42 ,  H01L51/4253 ,  H01L51/56

    Abstract: A method is provided for photolithographic patterning of an organic layer, comprising: providing a shielding layer on the organic layer; providing a photoresist layer on the shielding layer; illuminating the photoresist layer through a shadow mask; developing the photoresist layer, thereby forming a patterned photoresist layer; performing a first dry etching step using the patterned photoresist layer as a mask, thereby removing at least an upper portion of the photoresist layer and completely removing the shielding layer at locations not covered by the photoresist layer; performing a second dry etching step using the patterned shielding layer as a mask, thereby removing the organic layer at locations not covered by the shielding layer; and removing the shielding layer, wherein removing the shielding layer comprises exposing it to water. A method of the present disclosure may advantageously be used in a process for fabricating organic semiconductor based devices and circuits.

    Abstract translation: 提供了一种用于有机层的光刻图案化的方法，包括：在有机层上提供屏蔽层; 在所述屏蔽层上提供光致抗蚀剂层; 通过荫罩照射光致抗蚀剂层; 显影光致抗蚀剂层，从而形成图案化的光致抗蚀剂层; 使用图案化的光致抗蚀剂层作为掩模进行第一干蚀刻步骤，从而去除光致抗蚀剂层的至少上部，并且在未被光致抗蚀剂层覆盖的位置处完全除去屏蔽层; 使用图案化屏蔽层作为掩模进行第二干蚀刻步骤，从而在未被屏蔽层覆盖的位置移除有机层; 并且去除屏蔽层，其中去除屏蔽层包括将其暴露于水中。 本公开的方法可有利地用于制造基于有机半导体的器件和电路的工艺。

    LAMINATE AND APPLICATION THEREOF
    8.
    发明申请
    LAMINATE AND APPLICATION THEREOF 审中-公开
    层压板及其应用

    公开(公告)号：US20160167337A1

    公开(公告)日：2016-06-16

    申请号：US15052122

    申请日：2016-02-24

    Applicant: FUJIFILM Corporation

    Inventor： Ichiro KOYAMA ,  Yu IWAI ,  Yoshitaka KAMOCHI

    IPC: B32B7/06 ,  H01L21/683

    CPC classification number: B32B7/06 ,  B32B7/12 ,  B32B9/00 ,  B32B15/08 ,  B32B25/20 ,  B32B27/08 ,  B32B27/22 ,  B32B27/283 ,  B32B27/302 ,  B32B27/304 ,  B32B27/365 ,  B32B2250/02 ,  B32B2255/10 ,  B32B2255/26 ,  B32B2255/28 ,  B32B2307/51 ,  B32B2307/748 ,  B32B2457/00 ,  B32B2457/14 ,  H01L21/02057 ,  H01L21/31133 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

    Abstract: Provided are a temporary bonding layer laminate for producing a semiconductor device, which can reliably and easily provide a temporary support for the device wafer when the device wafer is subjected to a mechanical or chemical treatment and can easily provide a release from the temporary support for the device wafer while not damaging the device wafer even after undergoing a process at a high temperature; and a composition for forming a protective layer, a composition for forming a release layer, and a kit, each of which is used for the production of the laminate.The laminate has a device wafer, a protective layer, a release layer, and a support substrate in this order, in which the protective layer is in contact only with the device wafer and the release layer, the release layer is in contact only with the protective layer and the support substrate, and the release layer contains a fluorine atom and/or a silicon atom.

    Abstract translation: 提供一种用于制造半导体器件的临时接合层层压体，当器件晶片经受机械或化学处理时，其可以可靠且容易地为器件晶片提供临时支撑，并且可以容易地从临时支撑件释放 即使在高温下进行处理也不会损坏器件晶片; 和用于形成保护层的组合物，用于形成剥离层的组合物和试剂盒，其用于制备层压体。 该层压体依次具有器件晶片，保护层，剥离层和支撑基板，其中保护层仅与器件晶片和释放层接触，释放层仅与 保护层和支撑基板，剥离层含有氟原子和/或硅原子。

    TEMPORARY BONDING LAMINATES FOR USED IN MANUFACTURE OF SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES
    9.
    发明申请
    TEMPORARY BONDING LAMINATES FOR USED IN MANUFACTURE OF SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES 有权
    用于制造半导体器件的临时粘结层压板及制造半导体器件的方法

    公开(公告)号：US20160035612A1

    公开(公告)日：2016-02-04

    申请号：US14865961

    申请日：2015-09-25

    Applicant: FUJIFILM Corporation

    Inventor： Ichiro KOYAMA ,  Yu IWAI ,  Masafumi YOSHIDA

    IPC: H01L21/683

    CPC classification number: H01L21/6835 ,  C09J7/40 ,  C09J2201/622 ,  C09J2203/326 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386

    Abstract: Provided is temporary bonding laminates for used in a manufacture of semiconductor devices, by which a member to be processed (a semiconductor wafer or the like) can be temporarily supported securely and readily during a mechanical or chemical process of the member to be processed and then the processed member can be readily released from the temporary support without damaging the processed member even after a high temperature process, and processes for manufacturing semiconductor devices. The temporary bonding laminate includes (A) a release layer and (B) an adhesive layer, wherein the release layer (A) comprises (a1) a first release layer having a softening point of 200° C. or more and adjoining the adhesive layer (B), and (a2) a second release layer adjoining the first release layer (a1); the second release layer (a2) contains a resin; and the resin after curing has a capable of being dissolved at 5% by mass or more, at 25° C., in at least one kind of solvents selected from hexane and the like.

    Abstract translation: 提供了用于制造半导体器件的临时粘合层压体，通过该半导体器件可以在待加工构件的机械或化学过程中可靠且容易地暂时支撑待加工构件（半导体晶片等），然后 即使在高温处理之后，处理过的构件也可以容易地从临时支撑体释放而不损坏处理的构件，以及用于制造半导体器件的工艺。 临时粘合层压体包括（A）剥离层和（B）粘合剂层，其中剥离层（A）包含（a1）软化点为200℃以上的第一剥离层，并且与粘合剂层相邻 （B），和（a2）与第一剥离层（a1）相邻的第二剥离层。 第二剥离层（a2）含有树脂; 固化后的树脂在25℃，5质量％以上溶解于选自己烷等的至少一种溶剂中。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    10.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20140322893A1

    公开(公告)日：2014-10-30

    申请号：US14324626

    申请日：2014-07-07

    Applicant: FUJIFILM CORPORATION

    Inventor： Shiro TAN ,  Kazuhiro FUJIMAKI ,  Yu IWAI ,  Ichiro KOYAMA ,  Atsushi NAKAMURA

    IPC: H01L23/00 ,  H01L21/683

    CPC classification number: H01L23/562 ,  C09J7/22 ,  C09J7/35 ,  C09J2203/326 ,  C09J2205/302 ,  H01L21/67115 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray, radiation or heat to irradiation of the adhesive layer with an actinic ray, radiation or heat, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching a first surface of the treated member from the adhesive layer of the adhesive support, wherein the irradiation of the adhesive layer with an actinic ray, radiation or heat is conducted so that adhesiveness decreases toward an outer surface from an inner surface on the substrate side of the adhesive layer.

    Abstract translation: 一种用于制造具有处理部件的半导体器件的方法，包括：对具有基底的粘合剂支撑体和能够增加或降低粘合性的粘合剂层进行照射时的光化射线，辐射或加热以对所述粘合剂层进行照射 光化射线，辐射或热，将待处理部件的第一表面粘附到粘合剂支撑体的粘合剂层上，对不同于被处理物体的第一表面的第二表面进行机械或化学处理 构件，以获得处理构件，并且从粘合剂支撑体的粘合剂层分离处理构件的第一表面，其中进行具有光化射线，辐射或热的粘合剂层的照射，使得粘附性朝向外表面减小 从粘合剂层的基板侧的内表面。

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