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    Light emitting diodes
    1.
    发明授权
    Light emitting diodes 有权

    公开(公告)号：US10263151B2

    公开(公告)日：2019-04-16

    申请号：US15680977

    申请日：2017-08-18

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Ajey P. Jacob ,  Srinivasa Banna ,  Deepak Nayak

    IPC: H01L27/15 ,  H01L33/24 ,  H01L33/40 ,  H01L21/20 ,  H01L33/18 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L33/46 ,  H01L33/36 ,  H01L33/16

    Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diodes and methods of manufacture. The method includes: forming fin structures with a doped core region, on a substrate material; forming a first color emitting region by cladding the doped core region of a first fin structure of the fin structures, while protecting the doped core regions of a second fin structure and a third fin structure of the fin structures; forming a second color emitting region by cladding the doped core region of the second fin structure, while protecting the doped core regions of the first fin structure and the third fin structure; and forming a third color emitting region by cladding the doped core region of the third fin structure, while protecting the doped core regions of the first fin structure and the second fin structure.

    Nanowire formation methods
    2.
    发明授权
    Nanowire formation methods 有权

    公开(公告)号：US10784402B2

    公开(公告)日：2020-09-22

    申请号：US16366811

    申请日：2019-03-27

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Srinivasa Banna ,  Deepak Nayak

    IPC: H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/30 ,  H01L27/15 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/24 ,  H01L25/16 ,  H01L33/18

    Abstract: Methods of forming an integrated InGaN/GaN or AlInGaP/InGaP LED on Si CMOS for RGB colors and the resulting devices are provided. Embodiments include forming trenches having a v-shaped bottom through an oxide layer and a portion of a substrate; forming AlN or GaAs in the v-shaped bottom; forming a n-GaN or n-InGaP pillar on the AlN or GaAs through and above the first oxide layer; forming an InGaN/GaN MQW or AlInGaP/InGaP MQW over the n-GaN or n-InGaP pillar; forming a p-GaN or p-InGaP layer over the n-GaN pillar and InGaN/GaN MQW or the n-InGaP pillar and AlInGaP/InGaP MQW down to the first oxide layer; forming a TCO layer over the first oxide layer and the p-GaN or p-InGaP layer; forming a second oxide layer over the TCO layer; and forming a metal pad on the TCO layer above each n-GaN or n-InGaP pillar.

    LIGHT EMITTING DIODES
    3.
    发明申请
    LIGHT EMITTING DIODES 审中-公开

    公开(公告)号：US20190058087A1

    公开(公告)日：2019-02-21

    申请号：US15680977

    申请日：2017-08-18

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Ajey P. Jacob ,  Srinivasa Banna ,  Deepak Nayak

    IPC: H01L33/24 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L33/46 ,  H01L33/36 ,  H01L27/15

    Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diodes and methods of manufacture. The method includes: forming fin structures with a doped core region, on a substrate material; forming a first color emitting region by cladding the doped core region of a first fin structure of the fin structures, while protecting the doped core regions of a second fin structure and a third fin structure of the fin structures; forming a second color emitting region by cladding the doped core region of the second fin structure, while protecting the doped core regions of the first fin structure and the third fin structure; and forming a third color emitting region by cladding the doped core region of the third fin structure, while protecting the doped core regions of the first fin structure and the second fin structure.

    LEDs with three color RGB pixels for displays
    5.
    发明授权
    LEDs with three color RGB pixels for displays 有权

    公开(公告)号：US10199429B2

    公开(公告)日：2019-02-05

    申请号：US15901850

    申请日：2018-02-21

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Srinivasa Banna ,  Deepak Nayak ,  Ajey P. Jacob

    IPC: H01L21/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/12 ,  H01L33/62 ,  H01L33/20 ,  H01L33/00 ,  H01L33/24

    Abstract: Devices and methods of forming the devices are disclosed. The device includes a substrate and a color LED pixel disposed on the substrate. The color LED pixel includes a red LED, a green LED and a blue LED. Each of the color LED includes a specific color LED body disposed on the respective color region on the substrate, a specific color multiple quantum well (MQW) on the respective color LED body and a specific color top LED layer disposed over the respective color MQW. The MQWs of the red LED, green LED and blue LED includes at least an indium gallium nitride (InxGa1-xN) layer and a gallium nitride (GaN), where x is the atomic percentage of In in the InxGa1-xN layer, and the MQWs of the red LED, green LED and blue LED have different bandgaps by varying x of the InxGa1-xN layer in the red LED, the green LED and the blue LED.

    Nanowire formation methods
    8.
    发明授权
    Nanowire formation methods 有权

    公开(公告)号：US10290768B2

    公开(公告)日：2019-05-14

    申请号：US15704982

    申请日：2017-09-14

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Srinivasa Banna ,  Deepak Nayak

    IPC: H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/30 ,  H01L27/15 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/24

    Abstract: Methods of forming an integrated InGaN/GaN or AlInGaP/InGaP LED on Si CMOS for RGB colors and the resulting devices are provided. Embodiments include forming trenches having a v-shaped bottom through an oxide layer and a portion of a substrate; forming AlN or GaAs in the v-shaped bottom; forming a n-GaN or n-InGaP pillar on the AlN or GaAs through and above the first oxide layer; forming an InGaN/GaN MQW or AlInGaP/InGaP MQW over the n-GaN or n-InGaP pillar; forming a p-GaN or p-InGaP layer over the n-GaN pillar and InGaN/GaN MQW or the n-InGaP pillar and AlInGaP/InGaP MQW down to the first oxide layer; forming a TCO layer over the first oxide layer and the p-GaN or p-InGaP layer; forming a second oxide layer over the TCO layer; and forming a metal pad on the TCO layer above each n-GaN or n-InGaP pillar.

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