公开(公告)号：US20180261510A1

公开(公告)日：2018-09-13

申请号：US15432016

申请日：2017-02-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiaofeng QIU ,  Michael V. AQUILINO ,  Patrick D. CARPENTER ,  Jessica DECHENE ,  Ming Hao TANG ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/8234 ,  H01L23/535 ,  H01L21/308 ,  H01L21/306 ,  H01L21/768 ,  H01L29/423 ,  H01L29/417 ,  H01L27/088

Abstract: A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.

公开(公告)号：US20180166383A1

公开(公告)日：2018-06-14

申请号：US15377592

申请日：2016-12-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Huy CAO ,  Zhiguo SUN ,  Joseph F. SHEPARD, JR. ,  Moosung M. CHAE

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to airgaps which isolate metal lines and methods of manufacture. The structure includes: a plurality of metal lines formed on an insulator layer; and a dielectric material completely filling a space having a first dimension between metal lines of the plurality of metal lines and providing a uniform airgap with a space having a second dimension between metal lines of the plurality of metal lines. The first dimension is larger than the second dimension.

公开(公告)号：US20150194342A1

公开(公告)日：2015-07-09

申请号：US14150260

申请日：2014-01-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Huy CAO ,  Songkram SRIVATHANAKUL ,  Huang LIU ,  Garo Jacques DERDERIAN ,  Boaz ALPERSON

IPC: H01L21/768 ,  H01L23/482

CPC classification number: H01L23/5329 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76831 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material including a carbon-containing species and an elemental carbon disposed therein, the carbon-containing species and the elemental carbon together defining a set carbon content within the carbon-rich contact liner material; and depositing the carbon-rich contact liner material conformally within the at least one contact opening disposed over the semiconductor substrate.

Abstract translation: 提供电路结构的导电接触结构及其制造方法。 该制造包括例如提供设置在半导体衬底上的至少一个接触开口; 形成包含含碳物质和设置在其中的元素碳的富碳接触衬垫材料，所述含碳物质和所述元素碳一起限定所述富碳接触衬里材料内的固定碳含量; 以及将所述富碳接触衬垫材料共形地沉积在设置在所述半导体衬底上的所述至少一个接触开口内。

公开(公告)号：US20190237363A1

公开(公告)日：2019-08-01

申请号：US15882291

申请日：2018-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jinsheng GAO ,  Daniel JAEGER ,  Chih-Chiang CHANG ,  Michael AQUILINO ,  Patrick CARPENTER ,  Junsic HONG ,  Mitchell RUTKOWSKI ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/768 ,  H01L21/28 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

公开(公告)号：US20150104948A1

公开(公告)日：2015-04-16

申请号：US14050472

申请日：2013-10-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. PATIL ,  Huy CAO ,  Hui ZHAN ,  Huang LIU

IPC: H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/31105 ,  H01L21/31116 ,  H01L21/31155 ,  H01L29/66795

Abstract: Methods of facilitating fabrication of circuit structures are provided which include, for instance: providing a structure with a film layer; modifying an etch property of the film layer by implanting at least one species of element or molecule into the upper portion of the film layer, the etch property of the film layer remaining unmodified beneath the upper portion; and subjecting the structure and film layer with the modified etch property to an etching process, the modified etch property of the film layer facilitating the etching process. Modifying the etch property of the upper portion of the film layer may include making the upper portion of the film layer preferentially susceptible or preferentially resistant to the etching process depending on the circuit fabrication approach being facilitated.

Abstract translation: 提供了便于制造电路结构的方法，其包括例如：提供具有膜层的结构; 通过将至少一种元素或分子注入到膜层的上部来改变膜层的蚀刻性质，膜层的蚀刻性质在上部保持不变; 并且对具有改进的蚀刻特性的结构和膜层进行蚀刻处理，使得蚀刻处理的膜层的改性蚀刻性能得以改善。 修改膜层上部的蚀刻性能可以包括使薄膜层的上部优先易于或优先地抵抗蚀刻工艺，这取决于促进的电路制造方法。

公开(公告)号：US20200013672A1

公开(公告)日：2020-01-09

申请号：US16573209

申请日：2019-09-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jinsheng GAO ,  Daniel JAEGER ,  Chih-Chiang CHANG ,  Michael AQUILINO ,  Patrick CARPENTER ,  Junsic HONG ,  Mitchell RUTKOWSKI ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/768 ,  H01L21/28 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

公开(公告)号：US20150357285A1

公开(公告)日：2015-12-10

申请号：US14799116

申请日：2015-07-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Huy CAO ,  Songkram SRIVATHANAKUL ,  Huang LIU ,  Garo Jacques DERDERIAN ,  Boaz ALPERSON

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76831 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material having a set carbon content conformally within the at least one contact opening disposed over the semiconductor substrate.

Abstract translation: 提供电路结构的导电接触结构及其制造方法。 该制造包括例如提供设置在半导体衬底上的至少一个接触开口; 在所述半导体衬底上设置的所述至少一个接触开口中形成具有固定碳含量的富碳接触衬垫材料。

公开(公告)号：US20140346648A1

公开(公告)日：2014-11-27

申请号：US13900976

申请日：2013-05-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Huy CAO ,  Huang LIU ,  Vijayalakshmi SESHACHALAM

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/505 ,  C23C16/515 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02211

Abstract: A low-K nitride film and a method of making are disclosed. Embodiments include forming a nitride film on a substrate by plasma enhanced chemical vapor deposition (PECVD) and periodically fluctuating a production of radicals during the PECVD based, at least in part, on plural cycles of a radiofrequency (RF) induced plasma.

Abstract translation: 公开了一种低K氮化物膜及其制造方法。 实施例包括通过等离子体增强化学气相沉积（PECVD）在衬底上形成氮化物膜，并且至少部分地基于射频（RF）感应等离子体的多个周期周期性地在PECVD期间波动自由基的产生。