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    Self-aligned double patterning process for two dimensional patterns
    5.
    发明授权
    Self-aligned double patterning process for two dimensional patterns 有权
    用于二维图案的自对准双重图案化工艺

    公开(公告)号：US09437481B2

    公开(公告)日：2016-09-06

    申请号：US14674792

    申请日：2015-03-31

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Lei Yuan ,  Jia Zeng ,  Youngtag Woo ,  Jongwook Kye

    IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  H01L21/027

    CPC classification number: H01L21/76802 ,  H01L21/027 ,  H01L21/033 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76877

    Abstract: One method includes forming a mandrel element above a hard mask layer, forming first and second spacers on the mandrel element, removing the mandrel element, a first opening being defined between the first and second spacers and exposing a portion of the hard mask layer and having a longitudinal axis extending in a first direction, forming a block mask covering a middle portion of the first opening, the block mask having a longitudinal axis extending in a second direction different than the first direction, etching the hard mask layer in the presence of the block mask and the first and second spacers to define aligned first and second line segment openings in the hard mask layer extending in the first direction, etching recesses in a dielectric layer disposed beneath the hard mask layer based on the first and second line segment openings, and filling the recesses with a conductive material.

    Abstract translation: 一种方法包括在硬掩模层之上形成心轴元件，在心轴元件上形成第一和第二间隔物，去除心轴元件，限定在第一和第二间隔物之间​​的第一开口，并暴露硬掩模层的一部分并具有 沿第一方向延伸的纵轴，形成覆盖所述第一开口的中间部分的阻挡掩模，所述阻挡掩模具有在与所述第一方向不同的第二方向上延伸的纵向轴线;在所述阻挡掩模的存在下， 阻挡掩模和所述第一和第二间隔物，以限定在所述硬掩模层中沿所述第一方向延伸的对准的第一和第二线段开口，基于所述第一和第二线段开口蚀刻设置在所述硬掩模层下方的电介质层中的凹陷， 并用导电材料填充凹部。

    MOL architecture enabling ultra-regular cross couple
    6.
    发明授权
    MOL architecture enabling ultra-regular cross couple 有权
    MOL架构使超正规交叉对

    公开(公告)号：US09431300B1

    公开(公告)日：2016-08-30

    申请号：US14837222

    申请日：2015-08-27

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Jia Zeng ,  Jongwook Kye ,  Harry J. Levinson

    IPC: H01L21/82 ,  H01L21/8234 ,  H01L23/528 ,  H01L23/522 ,  H01L29/66 ,  H01L27/088 ,  H01L29/45 ,  H01L21/00

    CPC classification number: H01L21/823475 ,  H01L21/823437 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/088 ,  H01L2027/11875

    Abstract: A method of forming an ultra-regular layout with unidirectional M1 metal line and the resulting device are disclosed. Embodiments include forming first and second vertical gate lines, spaced from and parallel to each other; forming a M1 metal line parallel to and between the first and second gate lines; forming first, second, and third M0 metal segments perpendicular to the M1 metal line; connecting the first M0 metal segment to the M1 metal line and the second gate line; connecting the second M0 metal segment to the first gate line and the second gate line; connecting the third M0 metal segment to the first gate line and the M1 metal line; forming a first gate cut on the first gate line between the second and third M0 metal segments; and forming a second gate cut on the second gate line between the first and second M0 segments.

    Abstract translation: 公开了一种用单向M1金属线形成超规则布局的方法及其结果。 实施例包括形成彼此间隔开并平行的第一和第二垂直栅极线; 形成平行于第一和第二栅极线之间的M1金属线; 形成垂直于M1金属线的第一，第二和第三M0金属段; 将第一M0金属段连接到M1金属线和第二栅极线; 将所述第二M0金属段连接到所述第一栅极线和所述第二栅极线; 将第三M0金属段连接到第一栅极线和M1金属线; 在所述第二和第三M0金属段之间的第一栅极线上形成第一栅极切割; 以及在第一和第二M0段之间的第二栅极线上形成第二栅极切割。

    Methods of patterning variable width metallization lines
    7.
    发明授权
    Methods of patterning variable width metallization lines 有权

    公开(公告)号：US10366917B2

    公开(公告)日：2019-07-30

    申请号：US15861799

    申请日：2018-01-04

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Xuelian Zhu ,  Jia Zeng ,  Chenchen Wang ,  Jongwook Kye

    IPC: H01L21/48 ,  H01L21/768

    Abstract: Methods of patterning metallization lines having variable widths in a metallization layer. A first mandrel layer is formed over a mask layer, with the mask layer overlying a second mandrel layer. The first mandrel layer is etched to form mandrel lines that have variable widths. The first non-mandrel trenches are etched in the mask layer, where the non-mandrel trenches have variable widths. The first mandrel lines are used to etch mandrel trenches in the mask layer, so that the mandrel lines and first non-mandrel lines define a mandrel pattern. The second mandrel layer is etched according to the mandrel pattern to form second mandrel lines, with the second mandrel lines having the variable widths of the plurality of first mandrel lines and the variable widths of the plurality of non-mandrel trenches.

    Middle of-line architecture for dense library layout using M0 hand-shake
    9.
    发明授权
    Middle of-line architecture for dense library layout using M0 hand-shake 有权
    使用M0手握密集图书馆布局的中线架构

    公开(公告)号：US09437588B1

    公开(公告)日：2016-09-06

    申请号：US14742935

    申请日：2015-06-18

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Jia Zeng ,  Jongwook Kye ,  Harry J. Levinson

    IPC: H01L29/66 ,  H01L27/02 ,  H01L21/8234 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L27/088

    CPC classification number: H01L27/0207 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5286 ,  H01L2027/11875

    Abstract: A dense library architecture using an M0 hand-shake and the method of forming the layout are disclosed. Embodiments include forming first and second active areas on a substrate, at the top and bottom of a cell, separated from each other; forming first through third gate lines perpendicular to the active areas, where the first and third gate lines are dummy gates at the cell edges; forming trench silicide segments on each of the active areas, between the first, second, and third gate lines; forming first and second M1 metal lines between the first and second gate lines and the second and third gate lines, respectively; forming a M0 segment between the first and second active regions perpendicular to the M1 metal lines; forming a CB between the M0 segment and the second gate line; and forming a V0 from the first metal line to the M0 segment.

    Abstract translation: 公开了使用M0手摇的密集库结构和形成布局的方法。 实施例包括在基板上，在电池的顶部和底部形成彼此分离的第一和第二有源区; 形成垂直于有源区的第一至​​第三栅极线，其中第一和第三栅极线在单元边缘处是伪栅极; 在所述第一，第二和第三栅极线之间的所述有源区域中的每一个上形成沟槽硅化物段; 在第一和第二栅极线与第二和第三栅极线之间分别形成第一和第二M1金属线; 在垂直于M1金属线的第一和第二有源区之间形成M0段; 在M0段和第二栅极线之间形成CB; 并从第一金属线形成V0至M0段。

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