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    Masking mechanism for film-forming device
    1.
    发明申请
    Masking mechanism for film-forming device 审中-公开
    成膜装置的遮蔽机构

    公开(公告)号：US20060057240A1

    公开(公告)日：2006-03-16

    申请号：US10528265

    申请日：2003-09-19

    申请人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： A01J21/00

    CPC分类号： C23C14/044

    摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.

    摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于以单轴方式相对于基板（12）移动掩模（11）的驱动装置 方向（A），其中以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，依次形成三个分量的薄膜，相应的膜厚梯度相互取向在三个不同的方向 以120°的角度间隔开，以使这些膜重叠，从而形成三元相图薄膜13。

    Flux assisted solid phase epitaxy
    2.
    发明授权
    Flux assisted solid phase epitaxy 失效
    助焊剂固相外延

    公开(公告)号：US07507290B2

    公开(公告)日：2009-03-24

    申请号：US10593897

    申请日：2005-03-22

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： C30B1/10

    CPC分类号： C30B9/08 ,  C30B3/00 ,  C30B19/02 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L21/3147 ,  H01L21/31691

    摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

    摘要翻译： 可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

    Flux Assisted Solid Phase Epitaxy
    3.
    发明申请
    Flux Assisted Solid Phase Epitaxy 失效
    助焊剂固相外延

    公开(公告)号：US20070209571A1

    公开(公告)日：2007-09-13

    申请号：US10593897

    申请日：2005-03-22

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： C30B19/02

    CPC分类号： C30B9/08 ,  C30B3/00 ,  C30B19/02 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L21/3147 ,  H01L21/31691

    摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

    摘要翻译： 可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

    Method for preparing single crystal oxide thin film
    5.
    发明授权
    Method for preparing single crystal oxide thin film 失效
    制备单晶氧化物薄膜的方法

    公开(公告)号：US06929695B2

    公开(公告)日：2005-08-16

    申请号：US10363392

    申请日：2001-08-31

    申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Yuji Matsumoto

    发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Yuji Matsumoto

    IPC分类号： C30B29/22 ,  C30B19/04 ,  C30B23/02 ,  C30B25/02 ,  H01L39/24 ,  C30B25/12 ,  C30B25/14

    CPC分类号： H01L39/2438 ,  C30B19/04 ,  C30B23/002 ,  C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  C30B29/225

    摘要： The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

    摘要翻译： 本发明是一种用于制备单晶氧化物薄膜的三相外延法，包括以下步骤：在基片上沉积用作种子层的氧化物薄膜并具有与氧化物薄膜相同的组成为 在种子层上沉积薄膜，该薄膜包括能够通过热从基底熔化和液化的物质，并将待沉积的氧化物溶解到种子层上，加热基底以形成液体层，并沉积 通过使用气相外延法通过液体层在种子层上形成氧化物以形成单晶氧化物薄膜。 在该方法中，在成膜步骤中将液体层上的氧分压设定在1.0至760托的范围内。

    Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them
    6.
    发明授权
    Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them 失效
    这种纳米板的层状Bi复合纳米板阵列，其制造方法和装置使用它们

    公开(公告)号：US07911927B2

    公开(公告)日：2011-03-22

    申请号：US11659428

    申请日：2005-08-01

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： G11B7/00

    CPC分类号： C30B29/605 ,  B01J23/002 ,  B01J23/18 ,  B01J35/004 ,  B01J37/0244 ,  B01J2523/00 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/024 ,  C23C14/088 ,  C23C14/28 ,  C30B25/02 ,  C30B29/22 ,  Y10T428/24942 ,  B01J2523/47 ,  B01J2523/54

    摘要： A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.

    摘要翻译： 提供Bi4Ti3O12纳米板，这种Bi4Ti3O12纳米板的阵列及其制备方法及其应用。 使用气相生长法，将VO x的焊剂层沉积在SrTiO 3（001）面对衬底上，然后将Bi4Ti3O12沉积在焊剂层上。 分别以独立的三面在与单晶衬底的特定结晶方向一致的方向上取向的矩形固体形式的助熔剂层上形成Bi4Ti3O12单晶纳米板。 作为通过自下而上方法生长的纳米结构的纳米板基本上固定在形状上并且密集地排列成彼此不接触，并且可应用于低成本的铁电存储器等。

    Method for flattening surface of oxide crystal to ultra high degree
    10.
    发明授权
    Method for flattening surface of oxide crystal to ultra high degree 失效
    氧化物晶体表面超高度平坦化的方法

    公开(公告)号：US07029528B2

    公开(公告)日：2006-04-18

    申请号：US10469987

    申请日：2002-03-15

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

    IPC分类号： C30B29/22

    CPC分类号： G02F1/37 ,  C30B29/22 ,  C30B33/10 ,  G02F1/3551 ,  G02F2001/3509

    摘要： There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level. According to this method, a chemically stable oxide which because of its complexity in both composition and structure is soluble neither with acid nor with alkaline and is insoluble even with a fluoric acid is allowed by reduction to be converted into a simpler oxide conventionally soluble with hydrochloric, nitric or sulfuric acid; hence a surface of its crystal is rendered capable of dissolving. Then, heat-treating the dissolved surface in the atmosphere at a suitable temperature for a suitable time period allows surface atoms to be rearranged and the surface to be superflattened to an atomic level. The present invention is applicable to the technical fields that require ultraviolet laser light, especially as core technologies of optical devices applied to optical information processing, optical communication or the like.

    摘要翻译： 提供了一种对既不具有酸也不与碱性溶解的氧化物晶体进行超平坦化的方法，制备ReCa 4 O（BO 3 3）3的方法 使用超平坦化方法的ReCa 4 O 3（3-3）3族氧化物单晶薄膜 具有SHG特性的膜，用于光入射/发射表面的超平面方法，以及氧化物晶体的缺陷评估方法。 用还原剂还原不溶于酸和碱的氧化物晶体的表面，还原的氧化物晶体表面用酸或碱的水溶液溶解，表面溶解的氧化物晶体在大气中进行热处理 由此，不仅酸和碱也不溶解的氧化物晶体的表面被超级原子化。 根据该方法，化学稳定的氧化物由于其组成和结构的复杂性既不溶于酸也不溶于碱，并且即使用氟酸也不溶于还原，可以转化为常规可溶于盐酸的简单氧化物 ，硝酸或硫酸; 因此其晶体的表面能够溶解。 然后，在合适的温度下对溶解在大气中的表面进行适当的时间周期处理，使得表面原子被重新排列并将表面超平坦化到原子水平。 本发明适用于需要紫外线激光的技术领域，特别是作为光学信息处理，光通信等的光学装置的核心技术。