公开(公告)号：US06929695B2

公开(公告)日：2005-08-16

申请号：US10363392

申请日：2001-08-31

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Yuji Matsumoto

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Yuji Matsumoto

IPC分类号： C30B29/22 ,  C30B19/04 ,  C30B23/02 ,  C30B25/02 ,  H01L39/24 ,  C30B25/12 ,  C30B25/14

CPC分类号： H01L39/2438 ,  C30B19/04 ,  C30B23/002 ,  C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  C30B29/225

摘要： The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

摘要翻译： 本发明是一种用于制备单晶氧化物薄膜的三相外延法，包括以下步骤：在基片上沉积用作种子层的氧化物薄膜并具有与氧化物薄膜相同的组成为 在种子层上沉积薄膜，该薄膜包括能够通过热从基底熔化和液化的物质，并将待沉积的氧化物溶解到种子层上，加热基底以形成液体层，并沉积 通过使用气相外延法通过液体层在种子层上形成氧化物以形成单晶氧化物薄膜。 在该方法中，在成膜步骤中将液体层上的氧分压设定在1.0至760托的范围内。

公开(公告)号：US07150788B2

公开(公告)日：2006-12-19

申请号：US10486571

申请日：2002-08-21

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Tomoteru Fukumura ,  Kota Terai

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Tomoteru Fukumura ,  Kota Terai

IPC分类号： C30B29/16

CPC分类号： C30B25/18 ,  C30B23/025 ,  C30B29/32 ,  C30B33/02

摘要： A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1−xTiO3 (where 0

摘要翻译： 提供了调整衬底和面内晶格常数调整衬底的面内晶格常数的方法。 在第一预先制备的温度下，用由第一材料制成的第一外延薄膜（2）形成由SrTiO 3 3制成的晶体衬底（1） 然后在由第二材料制成的第二外延薄膜（6）上的第一外延薄膜（2）上，例如BaTiO 3 3， 例如，含有第一材料的物质和与其一起形成的另一物质的BaxSr 1-x N 2 O 3（其中0

公开(公告)号：US06617539B1

公开(公告)日：2003-09-09

申请号：US09786460

申请日：2001-03-05

申请人： Hideomi Koinuma ,  Masashi Kawasaki

发明人： Hideomi Koinuma ,  Masashi Kawasaki

IPC分类号： B23K2600

CPC分类号： C23C14/541

摘要： A laser heating apparatus (20) for heating a thin film forming substrate (1) in a thin film manufacturing process is disclosed. The substrate (1) set in position in a vacuum chamber (101) of a film forming apparatus (100) is irradiated with a laser light and is thereby heated to a desired temperature. The laser light is guided to a region of the substrate (1) by means of an optical fiber (23), and the laser beams emanating from the outlet end of the optical fiber (23) is incident directly or indirectly via a reflecting mirror (33) on the substrate (1). The optical fiber (23) is sheathed with a jacket tube (24) whose interior is vacuum drawn. Using a laser light enables the arrangement to be used even in an oxidizing atmosphere and even an insulating substrate to be heated.

摘要翻译： 公开了一种用于在薄膜制造工艺中加热薄膜形成基板（1）的激光加热装置（20）。 将成膜装置（100）的真空室（101）中的基板（1）照射激光，由此被加热到期望的温度。 激光通过光纤（23）被引导到基板（1）的区域，并且从光纤（23）的出口端发出的激光束直接或间接地通过反射镜（ 33）放置在基板（1）上。 光纤（23）用内套真空抽吸的护套管（24）套管。 使用激光使得即使在氧化气氛中甚至是要加热的绝缘基板也可以使用这种布置。

公开(公告)号：US06459763B1

公开(公告)日：2002-10-01

申请号：US09744304

申请日：2001-03-26

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Kazuhiko Omote ,  Tetsuo Kikuchi

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Kazuhiko Omote ,  Tetsuo Kikuchi

IPC分类号： G01N2320

CPC分类号： G01N23/207 ,  B01J2219/00527 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00659 ,  B01J2219/00689 ,  B01J2219/00707 ,  B01J2219/00756

摘要： A combinatorial X-ray diffractor, particularly a combinatorial X-ray diffractor which can measure one row of samples among a plurality of samples arranged into a matrix simultaneously by X-ray diffraction. For the purpose of high throughput screening, a plurality of samples (10) are arranged into a row X1, a row X2, a row X3, and a row X4 on a sample stage and samples in each row are measured simultaneously by X-ray diffraction, measured data are processed by an information processor (20), information data useful for the evaluation of thin film material are automatically extracted and arranged and the extracted and arranged information data are displayed on a display apparatus (27).

摘要翻译： 组合X射线衍射器，特别是组合X射线衍射器，其可以通过X射线衍射同时测量排列成矩阵的多个样本中的一行样本。 为了高通量筛选的目的，将多个样品（10）排列在样品台上的行X1，行X2，行X3和行X4中，并且通过X射线同时测量每行中的样品 衍射，测量数据由信息处理器（20）处理，自动提取和布置用于评估薄膜材料的信息数据，并将提取和排列的信息数据显示在显示装置（27）上。

公开(公告)号：US06888156B2

公开(公告)日：2005-05-03

申请号：US10179006

申请日：2002-06-26

申请人： Toyohiro Chikyow ,  Hideomi Koinuma ,  Masashi Kawasaki ,  Yoo Young Zo ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

发明人： Toyohiro Chikyow ,  Hideomi Koinuma ,  Masashi Kawasaki ,  Yoo Young Zo ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/06 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L21/0328

CPC分类号： H01L21/02381 ,  H01L21/02472 ,  H01L21/02474 ,  H01L21/02491 ,  H01L21/0254

摘要： The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

摘要翻译： 本发明提供了一种薄膜器件，其中通过适当的缓冲层在Si单晶衬底上外延生长离子晶体及其制造方法。 首先将ZnS层沉积在Si单晶衬底上。 在其上沉积离子晶体薄膜（n-GaN层，GaN层和p-GaN层）。 ZnS薄膜是结晶性优异且表面平坦性优异的取向膜。 当ZnS可以在Si单晶衬底上一次外延生长时，离子晶体薄膜随后可以容易地外延生长。 因此，ZnS形成为缓冲层，由此，即使在Si单晶衬底上具有很少晶格缺陷的外延薄膜中也可以容易地外延生长与Si的晶格常数不同的离子晶体。 可以提高利用它的薄膜器件的特性。

公开(公告)号：US4933300A

公开(公告)日：1990-06-12

申请号：US155546

申请日：1988-02-12

申请人： Hideomi Koinuma ,  Kazuo Fueki ,  Masashi Kawasaki

发明人： Hideomi Koinuma ,  Kazuo Fueki ,  Masashi Kawasaki

IPC分类号： C30B25/10 ,  C30B25/14 ,  H01L21/20 ,  H01L21/205 ,  H01L21/365

CPC分类号： H01L21/02529 ,  C30B25/105 ,  C30B25/14 ,  C30B29/68 ,  H01L21/02447 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02592 ,  H01L21/0262

摘要： A superlattice film is formed by introducing a mixture of a first gas reactant capable of only plasma-excited chemical reaction and a second gas reactant capable of both plasma-excited chemical reactions into a reaction chamber, discontinuously carrying out plasma-excited chemical reaction, and continuously carrying out light-excited chemical reaction, thereby alternately depositing on a substrate a thin film layer which is formed when the plasma- and light-excited chemical reactions are carried out and another thin film layer which is formed when the plasma-excited chemical reaction is interrupted, thereby forming a thin film of alternately deposited layers.

摘要翻译： 通过将能够仅进行等离子体激发的化学反应的第一气体反应物和能够等离子体激发的化学反应的第二气体反应物的混合物引入反应室，不连续地进行等离子体激发的化学反应，形成超晶格膜，以及 连续地进行光激发的化学反应，从而在基板上交替地沉积在进行等离子体和光激发的化学反应时形成的薄膜层和当等离子体激发的化学反应形成的另一薄膜层时 被中断，从而形成交替沉积层的薄膜。

公开(公告)号：US20050179034A1

公开(公告)日：2005-08-18

申请号：US11097186

申请日：2005-04-04

申请人： Toyohiro Chikyow ,  Hideomi Koinuma ,  Masashi Kawasaki ,  Yoo Zo ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

发明人： Toyohiro Chikyow ,  Hideomi Koinuma ,  Masashi Kawasaki ,  Yoo Zo ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/10

CPC分类号： H01L21/02381 ,  H01L21/02472 ,  H01L21/02474 ,  H01L21/02491 ,  H01L21/0254

摘要： The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

摘要翻译： 本发明提供了一种薄膜器件，其中通过适当的缓冲层在Si单晶衬底上外延生长离子晶体及其制造方法。 首先将ZnS层沉积在Si单晶衬底上。 在其上沉积离子晶体薄膜（n-GaN层，GaN层和p-GaN层）。 ZnS薄膜是结晶性优异且表面平坦性优异的取向膜。 当ZnS可以在Si单晶衬底上一次外延生长时，离子晶体薄膜随后可以容易地外延生长。 因此，ZnS形成为缓冲层，由此，即使在Si单晶衬底上具有很少晶格缺陷的外延薄膜中也可以容易地外延生长与Si的晶格常数不同的离子晶体。 可以提高利用它的薄膜器件的特性。

公开(公告)号：US06855972B2

公开(公告)日：2005-02-15

申请号：US10166055

申请日：2002-06-11

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Toyohiro Chikyow ,  Yoshiyuki Yonezawa ,  Yoshinori Konishi

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Toyohiro Chikyow ,  Yoshiyuki Yonezawa ,  Yoshinori Konishi

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L25/18 ,  H01L27/04 ,  H01L27/06 ,  H01L31/119 ,  H01L29/00

CPC分类号： H01L27/0694 ,  H01G4/33 ,  H01G4/40 ,  H01L21/31691 ,  H01L21/8221

摘要： A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate 1a, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.

摘要翻译： 复合集成电路的特征在于，为了将氧化物薄膜实际用作电子器件，在硅衬底上生长高结晶氧化物薄膜。 独立地形成MOS电路和薄膜电容器，并且使用环氧树脂层压两个基板。 它们通过埋地布线连接，从而构成复合电路封装。 作为第二基板1a，使用与（100）面的IC基板不同的（110）面取向硅基板。 在终止处理后的（110）硅衬底上，将电介质层膜沉积，然后形成上电极，并形成薄膜线圈。 绝缘磁性凝胶填充在线圈线及其上部之间。 因此，完成了薄膜线圈和复合集成电路的制造工艺。

公开(公告)号：US06344084B1

公开(公告)日：2002-02-05

申请号：US09554011

申请日：2000-05-09

申请人： Hideomi Koinuma ,  Masashi Kawasaki

发明人： Hideomi Koinuma ,  Masashi Kawasaki

IPC分类号： C30B2512

CPC分类号： B01J19/0046 ,  B01J2219/00443 ,  B01J2219/00445 ,  B01J2219/00495 ,  B01J2219/00527 ,  B01J2219/00536 ,  B01J2219/00585 ,  B01J2219/0059 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00659 ,  B01J2219/00689 ,  B01J2219/00745 ,  B01J2219/00747 ,  C30B23/002 ,  C40B30/08 ,  C40B40/18 ,  C40B60/14 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber (22) having pressure therein controllable; one or more conveyable substrate heating units (36) having a substrate holder (48) for holding one or more substrates in the common chamber; and one or more process conducting chambers (24, 26, 28) having pressure therein controllable and provided to correspond to the substrate heating units. The process conducting chambers includes a growth chamber (24) which has a multiple raw material supply means for supplying raw materials onto a substrate (5) held by a substrate heating unit, a gas supply means for feeding a gas onto a surface of the substrate, and an instantaneous observation means for instantaneously observing epitaxial growth of monomolecular layers for each of the layers on the substrate surface, thereby rendering the formation of vacuum chambers constituting from substrate heating unit and process conducting chambers, which are controllable in temperatures and pressures.

摘要翻译： 提供一种组合分子层外延装置，其包括其中具有压力可控的公共室（22） 一个或多个可输送基板加热单元（36），具有用于将一个或多个基板保持在公共室中的基板保持器（48） 以及一个或多个具有压力的工艺导电室（24,26,28），其可控制并且被提供以对应于衬底加热单元。 工艺导电室包括生长室（24），其具有用于将原材料供给到由基板加热单元保持的基板（5）上的多个原料供给装置，用于将气体供给到基板的表面上的气体供给装置 以及用于瞬时观察基板表面上的每个层的单分子层的外延生长的瞬时观察装置，从而形成由温度和压力可控的基板加热单元和加工导电室构成的真空室。

公开(公告)号：US5569502A

公开(公告)日：1996-10-29

申请号：US118829

申请日：1993-09-10

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Masatomo Sumiya

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Masatomo Sumiya

IPC分类号： C23C16/24 ,  C23C16/44 ,  B06B1/00

CPC分类号： C23C16/4415 ,  C23C16/24

摘要： A process and apparatus for depositing a film as desired on the surface of a substrate yet at a low temperature, said process comprising introducing a product gas into a film deposition chamber having provided therein a substrate being mounted on a support, and depositing a film on the surface of said substrate by activating said product gas inside said film deposition chamber while applying ultrasonic oscillation to said substrate.

摘要翻译： 一种用于在低温下在基材表面上根据需要沉积膜的方法和装置，所述方法包括将产物气体引入成膜室中，所述膜沉积室中设置有将基材安装在载体上，并将膜沉积在 通过在所述成膜室内激活所述产品气体，同时向所述基板施加超声振荡，从而使所述基板的表面。