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    Masking mechanism for film-forming device
    1.
    发明申请
    Masking mechanism for film-forming device 审中-公开
    成膜装置的遮蔽机构

    公开(公告)号：US20060057240A1

    公开(公告)日：2006-03-16

    申请号：US10528265

    申请日：2003-09-19

    申请人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： A01J21/00

    CPC分类号： C23C14/044

    摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.

    摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于以单轴方式相对于基板（12）移动掩模（11）的驱动装置 方向（A），其中以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，依次形成三个分量的薄膜，相应的膜厚梯度相互取向在三个不同的方向 以120°的角度间隔开，以使这些膜重叠，从而形成三元相图薄膜13。

    Flux assisted solid phase epitaxy
    2.
    发明授权
    Flux assisted solid phase epitaxy 失效
    助焊剂固相外延

    公开(公告)号：US07507290B2

    公开(公告)日：2009-03-24

    申请号：US10593897

    申请日：2005-03-22

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： C30B1/10

    CPC分类号： C30B9/08 ,  C30B3/00 ,  C30B19/02 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L21/3147 ,  H01L21/31691

    摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

    摘要翻译： 可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

    Flux Assisted Solid Phase Epitaxy
    3.
    发明申请
    Flux Assisted Solid Phase Epitaxy 失效
    助焊剂固相外延

    公开(公告)号：US20070209571A1

    公开(公告)日：2007-09-13

    申请号：US10593897

    申请日：2005-03-22

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： C30B19/02

    CPC分类号： C30B9/08 ,  C30B3/00 ,  C30B19/02 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L21/3147 ,  H01L21/31691

    摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

    摘要翻译： 可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

    Method for preparing single crystal oxide thin film
    5.
    发明授权
    Method for preparing single crystal oxide thin film 失效
    制备单晶氧化物薄膜的方法

    公开(公告)号：US06929695B2

    公开(公告)日：2005-08-16

    申请号：US10363392

    申请日：2001-08-31

    申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Yuji Matsumoto

    发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Yuji Matsumoto

    IPC分类号： C30B29/22 ,  C30B19/04 ,  C30B23/02 ,  C30B25/02 ,  H01L39/24 ,  C30B25/12 ,  C30B25/14

    CPC分类号： H01L39/2438 ,  C30B19/04 ,  C30B23/002 ,  C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  C30B29/225

    摘要： The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

    摘要翻译： 本发明是一种用于制备单晶氧化物薄膜的三相外延法，包括以下步骤：在基片上沉积用作种子层的氧化物薄膜并具有与氧化物薄膜相同的组成为 在种子层上沉积薄膜，该薄膜包括能够通过热从基底熔化和液化的物质，并将待沉积的氧化物溶解到种子层上，加热基底以形成液体层，并沉积 通过使用气相外延法通过液体层在种子层上形成氧化物以形成单晶氧化物薄膜。 在该方法中，在成膜步骤中将液体层上的氧分压设定在1.0至760托的范围内。

    Masking mechanism for film forming apparatus
    6.
    发明授权
    Masking mechanism for film forming apparatus 有权
    成膜装置的遮蔽机构

    公开(公告)号：US09157144B2

    公开(公告)日：2015-10-13

    申请号：US12652340

    申请日：2010-01-05

    申请人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： C23C16/00 ,  C23C14/04

    CPC分类号： C23C14/044

    摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.

    摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于沿着单轴方向（A（A））移动掩模（11）相对于基板（12）的驱动装置 ），由此以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，连续地形成三个分量的薄膜，各自的膜厚度梯度在三个不同的方向上互相间隔开 以120°的角度使得这些膜重叠，由此形成三元相图薄膜13。

    Semiconductor Device Using Titanium Dioxide as Active Layer and Method for Producing Semiconductor Device
    7.
    发明申请
    Semiconductor Device Using Titanium Dioxide as Active Layer and Method for Producing Semiconductor Device 审中-公开
    使用二氧化钛作为活性层的半导体器件及其制造方法

    公开(公告)号：US20080210934A1

    公开(公告)日：2008-09-04

    申请号：US11909119

    申请日：2006-02-23

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Masao Katayama

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Masao Katayama

    IPC分类号： H01L29/10 ,  H01L21/00

    CPC分类号： H01L29/7869 ,  H01L29/242

    摘要： Object: To provide a semiconductor device using titanium dioxide as an active layer and a method for producing thereof.Means for Solving the Problems: The semiconductor device 10 according to the present invention includes TiO2 as an active layer thereof. The semiconductor device 10 according to the present invention includes a gate electrode 20, a TiO2 layer 12 which functions as a semiconductor active layer and forming a channel, a source electrode and a drain electrode being electrically connected to the TiO2 layer, and an insulating film formed between the gate electrode and the TiO2 layer. The TiO2 layer 12 may be a single crystal substrate including a Rutile or Anatase structure which has a step-terrace structure. The TiO2 layer 12 may be a vapor deposition film of TiO2. Further the present invention provides a method for producing the semiconductor device using titanium dioxide as the active layer.

    摘要翻译： 目的：提供使用二氧化钛作为活性层的半导体装置及其制造方法。 解决问题的手段根据本发明的半导体器件10包括作为其活性层的TiO 2。 根据本发明的半导体器件10包括用作半导体有源层并形成沟道的栅电极20，TiO 2层12，源电极和漏电极，电连接到 TiO 2层，以及形成在栅电极和TiO 2层之间的绝缘膜。 TiO 2层12可以是包括具有阶梯平台结构的金红石或锐钛矿结构的单晶基板。 TiO 2层12可以是TiO 2的气相沉积膜。 此外，本发明提供一种使用二氧化钛作为活性层的半导体器件的制造方法。

    Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them
    8.
    发明授权
    Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them 失效
    这种纳米板的层状Bi复合纳米板阵列，其制造方法和装置使用它们

    公开(公告)号：US07911927B2

    公开(公告)日：2011-03-22

    申请号：US11659428

    申请日：2005-08-01

    申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Ryota Takahashi

    IPC分类号： G11B7/00

    CPC分类号： C30B29/605 ,  B01J23/002 ,  B01J23/18 ,  B01J35/004 ,  B01J37/0244 ,  B01J2523/00 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/024 ,  C23C14/088 ,  C23C14/28 ,  C30B25/02 ,  C30B29/22 ,  Y10T428/24942 ,  B01J2523/47 ,  B01J2523/54

    摘要： A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.

    摘要翻译： 提供Bi4Ti3O12纳米板，这种Bi4Ti3O12纳米板的阵列及其制备方法及其应用。 使用气相生长法，将VO x的焊剂层沉积在SrTiO 3（001）面对衬底上，然后将Bi4Ti3O12沉积在焊剂层上。 分别以独立的三面在与单晶衬底的特定结晶方向一致的方向上取向的矩形固体形式的助熔剂层上形成Bi4Ti3O12单晶纳米板。 作为通过自下而上方法生长的纳米结构的纳米板基本上固定在形状上并且密集地排列成彼此不接触，并且可应用于低成本的铁电存储器等。