公开(公告)号：US4740819A

公开(公告)日：1988-04-26

申请号：US680118

申请日：1986-06-30

申请人： Hirobumi Ouchi ,  Hiroshi Matsuda ,  Makoto Morioka ,  Masahiko Kawata ,  Kazuhiro Kurata ,  Yasushi Koga

发明人： Hirobumi Ouchi ,  Hiroshi Matsuda ,  Makoto Morioka ,  Masahiko Kawata ,  Kazuhiro Kurata ,  Yasushi Koga

IPC分类号： H01L31/00 ,  H01L31/107 ,  H01L29/90

CPC分类号： H01L31/1075

摘要： Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate, at least a first semiconductor layer which exhibits a first conductivity type, a second semiconductor layer which is disposed on said first semiconductor layer, which has a forbidden band gap greater than that of said first semiconductor layer and which exhibits the first conductivity type, and a p-n junction which is formed by a region disposed in said second semiconductor layer and exhibiting a second conductivity type; characterized by comprising a third semiconductor layer which is disposed on said second semiconductor layer, which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer is usually made of a group III-V compound semiconductor of a quaternary system. By way of example, in a case where the first semiconductor layer is formed of InGaAsP and where the second semiconductor layer is formed of InP, the third semiconductor layer is made of InGaAsP, InGaAs or the like. A photo-detective semiconductor device of low dark current can be provided.

摘要翻译： 公开了一种光检测半导体器件，其在预定半导体衬底上具有至少第一导电类型的第一半导体层，设置在所述第一半导体层上的禁止带隙大于第二半导体层的第二半导体层， 所述第一半导体层的表面具有第一导电类型，以及pn结，其由设置在所述第二半导体层中并呈现第二导电类型的区域形成; 其特征在于包括：第三半导体层，其设置在所述第二半导体层上，其具有第一导电类型并具有表面保护功能。 第三半导体层通常由四元系的III-V族化合物半导体制成。 作为示例，在第一半导体层由InGaAsP形成且第二半导体层由InP形成的情况下，第三半导体层由InGaAsP，InGaAs等构成。 可以提供低暗电流的光检测半导体器件。

公开(公告)号：US4367483A

公开(公告)日：1983-01-04

申请号：US192991

申请日：1980-10-02

申请人： Takeo Takahashi ,  Kazuhiro Kurata ,  Yuichi Ono ,  Kazuhiro Ito ,  Makoto Morioka ,  Mitsuhiro Mori ,  Ginro Takemura ,  Makoto Sakamoto ,  Masahiro Ichiki ,  Youichi Yasuda ,  Hirobumi Ouchi

发明人： Takeo Takahashi ,  Kazuhiro Kurata ,  Yuichi Ono ,  Kazuhiro Ito ,  Makoto Morioka ,  Mitsuhiro Mori ,  Ginro Takemura ,  Makoto Sakamoto ,  Masahiro Ichiki ,  Youichi Yasuda ,  Hirobumi Ouchi

IPC分类号： G02B6/42 ,  H01L27/15 ,  H01L31/12

CPC分类号： H04B10/40 ,  G02B6/4246 ,  H01L25/167 ,  H01L31/12 ,  H01L2924/0002

摘要： An optical semiconductor device includes a light emitting element disposed on a silicon sub-mount having a light receiving element formed in a surface region. By virtue of integral arrangement of the light emitting element and the light receiving element, a single lens can be used for both optical transmission and optical reception, whereby an optical communication system can be manufactured very inexpensively. Further, transmission and reception can be carried out simultaneously.

摘要翻译： 光学半导体器件包括设置在具有形成在表面区域中的光接收元件的硅子座上的发光元件。 通过发光元件和光接收元件的整体布置，可以将单个透镜用于光传输和光接收两者，从而可以非常便宜地制造光通信系统。 此外，可以同时进行发送和接收。

公开(公告)号：US4212021A

公开(公告)日：1980-07-08

申请号：US41318

申请日：1979-05-22

申请人： Yuichi Ono ,  Mitsuhiro Mori ,  Makoto Morioka ,  Kazuhiro Ito ,  Masahiko Kawata ,  Kazuhiro Kurata

发明人： Yuichi Ono ,  Mitsuhiro Mori ,  Makoto Morioka ,  Kazuhiro Ito ,  Masahiko Kawata ,  Kazuhiro Kurata

IPC分类号： G02B6/42 ,  H01L33/00 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/48 ,  H01L33/58

CPC分类号： H01L33/20 ,  G02B6/4202 ,  H01L33/0025 ,  H01L33/24 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/38 ,  H01L33/483 ,  H01L33/58

摘要： In a prior-art injection type light emitting device which is constructed so that a predetermined range of a p-n junction formed by a semiconductor substrate and an epitaxial layer provided thereon may radiate, a radiation region in the p-n junction becomes larger in area than the region into which current is introduced, on account of the current spreading phenomenon. The construction of a light emitting device free from the phenomenon and a method for manufacturing the light emitting device are disclosed.

摘要翻译： 在现有技术的注入型发光器件中，其结构使得由半导体衬底形成的pn结的预定范围和设置在其上的外延层可以辐射，pn结中的辐射区域的面积比区域 由于目前的传播现象，引入了电流。 公开了一种没有现象的发光器件的结构和用于制造发光器件的方法。

公开(公告)号：US4122486A

公开(公告)日：1978-10-24

申请号：US771576

申请日：1977-02-24

申请人： Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitsuhiro Mori ,  Masahiko Kawata ,  Kazuhiro Kurata

发明人： Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitsuhiro Mori ,  Masahiko Kawata ,  Kazuhiro Kurata

IPC分类号： H01L33/30 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/0025

摘要： A light emitting element made of a group III - V compound semiconductor has a p-n junction and a hetero-junction which are identical; the mixing ratio (band gap) of a p-type layer on the light emitting side is sufficiently smaller than that of an n-type layer on the opposite side. The semiconductor light-emitting element is especially useful as a light source, for optical communications, photoexcitation, etc.

摘要翻译： 由III-V族化合物半导体制成的发光元件具有相同的p-n结和异质结; 发光侧的p型层的混合比（带隙）比相对侧的n型层的混合比（带隙）充分小。 半导体发光元件作为光源特别有用，用于光通信，光激发等。

公开(公告)号：US3960618A

公开(公告)日：1976-06-01

申请号：US561795

申请日：1975-03-25

申请人： Masao Kawamura ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono ,  Sachio Ishioka ,  Kazuhiro Kurata

发明人： Masao Kawamura ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono ,  Sachio Ishioka ,  Kazuhiro Kurata

IPC分类号： B60C9/20 ,  C30B19/00 ,  C30B19/12 ,  C30B29/40 ,  H01L21/208 ,  H01L33/28 ,  H01L33/30 ,  H01L7/38

CPC分类号： B60C9/2009 ,  C30B19/12 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S438/955

摘要： In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, which is smaller than that of a saturated solution, after heating them at a temperature for crystal growth. The substrate crystal is kept in contact with the solution during a period of time sufficient to remove a surface portion of the substrate crystal. Then the substrate crystal is brought into contact with a solution for crystal growth containing a substance to be grown as solute and a crystal of the substance is grown epitaxially on an exposed clean surface of the substrate crystal.

摘要翻译： 在液相中化合物半导体晶体的外延生长工艺中，使基板晶体与含有预定量的至少一种基板晶体成分的溶质作为溶质接触，所述至少一种成分比饱和溶液 在使晶体生长的温度下加热。 衬底晶体在足以去除衬底晶体的表面部分的时间段内与溶液保持接触。 然后使衬底晶体与用于晶体生长的溶液接触，所述溶液含有要作为溶质生长的物质，并且物质的晶体在衬底晶体的暴露的清洁表面上外延生长。

公开(公告)号：US4183039A

公开(公告)日：1980-01-08

申请号：US913055

申请日：1978-06-06

申请人： Masaaki Aoki ,  Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitshiuro Mori ,  Kazuhiro Kurata

发明人： Masaaki Aoki ,  Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitshiuro Mori ,  Kazuhiro Kurata

IPC分类号： H01L21/22 ,  H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0008

摘要： A light emitting semiconductor device wherein a p-n junction is defined by a ditch and wherein the ditch either extends to a low resistance layer or is away from the low resistance layer at most 1/2 of the width of the ditch is disclosed. It has the merit that the near field pattern is much more uniform than in a prior-art device.

摘要翻译： 一种发光半导体器件，其中p-n结由沟道限定，并且其中沟槽或者延伸到低电阻层或远离沟槽的至多1/2宽度的低电阻层。 具有近场图案比现有技术装置更均匀的优点。

公开(公告)号：US4017881A

公开(公告)日：1977-04-12

申请号：US612282

申请日：1975-09-11

申请人： Yuichi Ono ,  Kazuhiro Kurata ,  Masao Kawamura ,  Makoto Morioka ,  Kazuhiro Ito

发明人： Yuichi Ono ,  Kazuhiro Kurata ,  Masao Kawamura ,  Makoto Morioka ,  Kazuhiro Ito

IPC分类号： H01L21/22 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S3/19

CPC分类号： H01L33/20 ,  H01L33/00 ,  H01L33/0008 ,  H01L33/0062 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/085

摘要： In a method for making a light emitting device having hemispherical dome type geometry, a p-conductivity type and then an n-conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a band gap wider than the two above-mentioned layers. A surface portion of these epitaxially grown layers, which is not covered by a mask deposited on the n-conductivity type layer at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape so that the n-conductivity type region is located at the central portion of the hemisphere.

摘要翻译： 在制造具有半球形圆顶型几何形状的发光器件的方法中，p型导电型和n型导电型层在由混合化合物半导体晶体制成的衬底上外延连续地生长，所述混合化合物半导体晶体的带隙宽于二 上述层。 这些外延生长层的表面部分未被掩模在沉积在n导电型层上的p型结的位置处的掩模覆盖，其中p型结被掺杂有p导电型杂质， 导电类型区域被转换为p导电型的区域包围。 晶体的另一侧形成为半球形状，使得n导电型区域位于半球的中心部分。

公开(公告)号：US4161701A

公开(公告)日：1979-07-17

申请号：US780789

申请日：1977-03-24

申请人： Yutaka Takeda ,  Satoshi Nakamura ,  Naoki Chinone ,  Hisao Nakashima ,  Kazuhiro Kurata

发明人： Yutaka Takeda ,  Satoshi Nakamura ,  Naoki Chinone ,  Hisao Nakashima ,  Kazuhiro Kurata

IPC分类号： H01L23/48 ,  H01S5/00 ,  H01S5/024 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/024 ,  H01L33/642 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2059

摘要： A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.

摘要翻译： 形成用于支撑半导体激光器的二极管芯片的半导体层高于包含导电区域的半导体层，由此安装二极管芯片的作用在二极管芯片上的应力减轻以防止性能下降和寿命缩短 的半导体激光器。

公开(公告)号：US5257335A

公开(公告)日：1993-10-26

申请号：US824078

申请日：1992-01-23

申请人： Kazuhiro Kurata ,  Koya Komatsu ,  Koji Yamamoto

发明人： Kazuhiro Kurata ,  Koya Komatsu ,  Koji Yamamoto

IPC分类号： G02B6/00 ,  G02B6/24 ,  G02B6/26 ,  G02B6/36

CPC分类号： G02B6/264 ,  G02B6/262

摘要： An optical terminal structure includes a single mode optical fiber having a short length, and a cylindrical member in which the single mode optical fiber is fixed. The cylindrical member has the co-axis as that of a core of the single mode optical fiber. Each of both facets of the cylindrical member is polished to have a mirror surface. The core and a clad of the single mode optical fiber have refractive indexes so that the normalized frequency in operation state of the single mode optical fiber becomes at most 2.405 as a value converted at a wavelength in use of 1.28 .mu.m. The wavelength in use is preferably in the range of 1.29 to 1.33 .mu.m.

公开(公告)号：US4984035A

公开(公告)日：1991-01-08

申请号：US178648

申请日：1988-04-07

申请人： Ryosaku Kanzawa ,  Ken Takahashi ,  Hisumi Sano ,  Kazuhiro Kurata

发明人： Ryosaku Kanzawa ,  Ken Takahashi ,  Hisumi Sano ,  Kazuhiro Kurata

IPC分类号： B41J2/45 ,  H01L27/15 ,  H01L33/00

CPC分类号： H01L33/0025 ,  B41J2/45 ,  H01L27/153 ,  H01L33/0062

摘要： A monolithic light emitting diode array includes: at least one mixed crystal layer formed on a substrate by an epitaxial growth to provide a P-N junction at the boundary surface thereof; row of a plurality of light emitting diode portions each having the P-N junction; at least one forward mesa etching groove provided along the row of a plurality of light emitting diode portions on the at least one mixed crystal layer; a plurality of reverse mesa etching grooves provided so to be orthogonal to the at least one forward mesa etching groove and positioned between the plurality of light emitting diode portions on the at least one mixed crystal layer; a plurality of individual electrodes having electrode portions extending respectively to the plurality of light emitting diode portions so as to cross the at least one forward mesa etching groove, and a common electrode provided on a back surface of said substrate. Each of the emitting diode portions is surrounded by the forward and reverse mesa etching grooves so that the manufacturing thereof becomes easier and the characteristic thereof is improved.

摘要翻译： 单片发光二极管阵列包括：通过外延生长在衬底上形成的至少一个混晶层，以在其边界表面提供P-N结; 行的多个发光二极管部分，每个具有P-N结; 沿着所述至少一个混晶层上的多个发光二极管部分的行设置的至少一个前台面蚀刻槽; 多个反向台面蚀刻槽，设置成与所述至少一个前台面蚀刻槽正交，并位于所述至少一个混晶层上的所述多个发光二极管部分之间; 多个单独电极，具有分别延伸到所述多个发光二极管部分以与所述至少一个前台面蚀刻槽交叉的电极部分和设置在所述基板的背面上的公共电极。 每个发光二极管部分被正向和反向台面蚀刻槽包围，使得其制造变得更容易并且其特性得到改善。