公开(公告)号：US5257335A

公开(公告)日：1993-10-26

申请号：US824078

申请日：1992-01-23

申请人： Kazuhiro Kurata ,  Koya Komatsu ,  Koji Yamamoto

发明人： Kazuhiro Kurata ,  Koya Komatsu ,  Koji Yamamoto

IPC分类号： G02B6/00 ,  G02B6/24 ,  G02B6/26 ,  G02B6/36

CPC分类号： G02B6/264 ,  G02B6/262

摘要： An optical terminal structure includes a single mode optical fiber having a short length, and a cylindrical member in which the single mode optical fiber is fixed. The cylindrical member has the co-axis as that of a core of the single mode optical fiber. Each of both facets of the cylindrical member is polished to have a mirror surface. The core and a clad of the single mode optical fiber have refractive indexes so that the normalized frequency in operation state of the single mode optical fiber becomes at most 2.405 as a value converted at a wavelength in use of 1.28 .mu.m. The wavelength in use is preferably in the range of 1.29 to 1.33 .mu.m.

公开(公告)号：US4161701A

公开(公告)日：1979-07-17

申请号：US780789

申请日：1977-03-24

申请人： Yutaka Takeda ,  Satoshi Nakamura ,  Naoki Chinone ,  Hisao Nakashima ,  Kazuhiro Kurata

发明人： Yutaka Takeda ,  Satoshi Nakamura ,  Naoki Chinone ,  Hisao Nakashima ,  Kazuhiro Kurata

IPC分类号： H01L23/48 ,  H01S5/00 ,  H01S5/024 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/024 ,  H01L33/642 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2059

摘要： A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.

摘要翻译： 形成用于支撑半导体激光器的二极管芯片的半导体层高于包含导电区域的半导体层，由此安装二极管芯片的作用在二极管芯片上的应力减轻以防止性能下降和寿命缩短 的半导体激光器。

公开(公告)号：US4984035A

公开(公告)日：1991-01-08

申请号：US178648

申请日：1988-04-07

申请人： Ryosaku Kanzawa ,  Ken Takahashi ,  Hisumi Sano ,  Kazuhiro Kurata

发明人： Ryosaku Kanzawa ,  Ken Takahashi ,  Hisumi Sano ,  Kazuhiro Kurata

IPC分类号： B41J2/45 ,  H01L27/15 ,  H01L33/00

CPC分类号： H01L33/0025 ,  B41J2/45 ,  H01L27/153 ,  H01L33/0062

摘要： A monolithic light emitting diode array includes: at least one mixed crystal layer formed on a substrate by an epitaxial growth to provide a P-N junction at the boundary surface thereof; row of a plurality of light emitting diode portions each having the P-N junction; at least one forward mesa etching groove provided along the row of a plurality of light emitting diode portions on the at least one mixed crystal layer; a plurality of reverse mesa etching grooves provided so to be orthogonal to the at least one forward mesa etching groove and positioned between the plurality of light emitting diode portions on the at least one mixed crystal layer; a plurality of individual electrodes having electrode portions extending respectively to the plurality of light emitting diode portions so as to cross the at least one forward mesa etching groove, and a common electrode provided on a back surface of said substrate. Each of the emitting diode portions is surrounded by the forward and reverse mesa etching grooves so that the manufacturing thereof becomes easier and the characteristic thereof is improved.

摘要翻译： 单片发光二极管阵列包括：通过外延生长在衬底上形成的至少一个混晶层，以在其边界表面提供P-N结; 行的多个发光二极管部分，每个具有P-N结; 沿着所述至少一个混晶层上的多个发光二极管部分的行设置的至少一个前台面蚀刻槽; 多个反向台面蚀刻槽，设置成与所述至少一个前台面蚀刻槽正交，并位于所述至少一个混晶层上的所述多个发光二极管部分之间; 多个单独电极，具有分别延伸到所述多个发光二极管部分以与所述至少一个前台面蚀刻槽交叉的电极部分和设置在所述基板的背面上的公共电极。 每个发光二极管部分被正向和反向台面蚀刻槽包围，使得其制造变得更容易并且其特性得到改善。

公开(公告)号：US4212021A

公开(公告)日：1980-07-08

申请号：US41318

申请日：1979-05-22

申请人： Yuichi Ono ,  Mitsuhiro Mori ,  Makoto Morioka ,  Kazuhiro Ito ,  Masahiko Kawata ,  Kazuhiro Kurata

发明人： Yuichi Ono ,  Mitsuhiro Mori ,  Makoto Morioka ,  Kazuhiro Ito ,  Masahiko Kawata ,  Kazuhiro Kurata

IPC分类号： G02B6/42 ,  H01L33/00 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/48 ,  H01L33/58

CPC分类号： H01L33/20 ,  G02B6/4202 ,  H01L33/0025 ,  H01L33/24 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/38 ,  H01L33/483 ,  H01L33/58

摘要： In a prior-art injection type light emitting device which is constructed so that a predetermined range of a p-n junction formed by a semiconductor substrate and an epitaxial layer provided thereon may radiate, a radiation region in the p-n junction becomes larger in area than the region into which current is introduced, on account of the current spreading phenomenon. The construction of a light emitting device free from the phenomenon and a method for manufacturing the light emitting device are disclosed.

摘要翻译： 在现有技术的注入型发光器件中，其结构使得由半导体衬底形成的pn结的预定范围和设置在其上的外延层可以辐射，pn结中的辐射区域的面积比区域 由于目前的传播现象，引入了电流。 公开了一种没有现象的发光器件的结构和用于制造发光器件的方法。

公开(公告)号：US4122486A

公开(公告)日：1978-10-24

申请号：US771576

申请日：1977-02-24

申请人： Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitsuhiro Mori ,  Masahiko Kawata ,  Kazuhiro Kurata

发明人： Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitsuhiro Mori ,  Masahiko Kawata ,  Kazuhiro Kurata

IPC分类号： H01L33/30 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/0025

摘要： A light emitting element made of a group III - V compound semiconductor has a p-n junction and a hetero-junction which are identical; the mixing ratio (band gap) of a p-type layer on the light emitting side is sufficiently smaller than that of an n-type layer on the opposite side. The semiconductor light-emitting element is especially useful as a light source, for optical communications, photoexcitation, etc.

摘要翻译： 由III-V族化合物半导体制成的发光元件具有相同的p-n结和异质结; 发光侧的p型层的混合比（带隙）比相对侧的n型层的混合比（带隙）充分小。 半导体发光元件作为光源特别有用，用于光通信，光激发等。

公开(公告)号：US4933601A

公开(公告)日：1990-06-12

申请号：US282175

申请日：1988-12-09

申请人： Toshio Sagawa ,  Kazuhiro Kurata

发明人： Toshio Sagawa ,  Kazuhiro Kurata

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  H01L25/075 ,  H01L27/15 ,  H01L33/08 ,  H01L33/30 ,  H01L33/40 ,  H01L33/58 ,  H01L33/62

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L25/0753 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L33/58

摘要： An LED array chip comprising; a first semiconductor layer having p-type conduction; a second semiconductor layer having a n-type conduction, possessing forbidden band width smaller than the first layer and provided on the first layer, so as to form a semiconductor chip having a pn junction at the interface with the first layer; the second layer being divided into a first region and a second region by etching the second layer through to the pn junction, the first region thereof being divided to form individual plural LEDs of predetermined configuration, and the n-type layer in the second region being converted to the p-type layer as so to serve as a common region; individual electrodes respectively provided to the surfaces of the LEDs; and a common electrode provided to the common region, parts of the exposed surface of the p-type layer corresponding to the LEDs serving as light emitting surfaces. The LED array chip is mounted on a printed circuit board by directly bonding the individual electrodes and the common electrode to the corresponding electrode pads of the printed circuit.

公开(公告)号：US3960618A

公开(公告)日：1976-06-01

申请号：US561795

申请日：1975-03-25

申请人： Masao Kawamura ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono ,  Sachio Ishioka ,  Kazuhiro Kurata

发明人： Masao Kawamura ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono ,  Sachio Ishioka ,  Kazuhiro Kurata

IPC分类号： B60C9/20 ,  C30B19/00 ,  C30B19/12 ,  C30B29/40 ,  H01L21/208 ,  H01L33/28 ,  H01L33/30 ,  H01L7/38

CPC分类号： B60C9/2009 ,  C30B19/12 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S438/955

摘要： In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, which is smaller than that of a saturated solution, after heating them at a temperature for crystal growth. The substrate crystal is kept in contact with the solution during a period of time sufficient to remove a surface portion of the substrate crystal. Then the substrate crystal is brought into contact with a solution for crystal growth containing a substance to be grown as solute and a crystal of the substance is grown epitaxially on an exposed clean surface of the substrate crystal.

摘要翻译： 在液相中化合物半导体晶体的外延生长工艺中，使基板晶体与含有预定量的至少一种基板晶体成分的溶质作为溶质接触，所述至少一种成分比饱和溶液 在使晶体生长的温度下加热。 衬底晶体在足以去除衬底晶体的表面部分的时间段内与溶液保持接触。 然后使衬底晶体与用于晶体生长的溶液接触，所述溶液含有要作为溶质生长的物质，并且物质的晶体在衬底晶体的暴露的清洁表面上外延生长。

公开(公告)号：US06273946B1

公开(公告)日：2001-08-14

申请号：US08050078

申请日：1993-05-05

申请人： Kazuhiro Kurata ,  Hajime Nakamura ,  Hiroshi Tomida

发明人： Kazuhiro Kurata ,  Hajime Nakamura ,  Hiroshi Tomida

IPC分类号： C30B1906

CPC分类号： C30B19/064

摘要： A used melt receptacle 40, a holder 60 for the alignment of crystalline substrates and a melt receptacle 20 are piled up in this order along a vertically extending central axis. A plurality of melt reservoirs 21a to 21d for different kinds of melts are disposed in the melt receptacle 20 concentrically about the central axis, while a plurality of used melt reservoirs are disposed in the used melt receptacle 40 in the same way. The supply of each melt from the corresponding melt reservoir 21a to 21d to the receiving cavity 63 of the holder 60 is changed by a cover 65, in which a melt supply hole 66 is formed, rotatable together with the holder 60. The melt used for crystal growth is discharged from the holder 60 to the used melt receptacle 40 through a cover 42 having used melt dropping holes 43a to 43d. Since the melt fills the receiving cavity 63 while partially remaining in the corresponding melt reservoir 21a to 21d, neither oxide films nor microcrystals are introduced into the receiving cavity 63. Hereby, a multi-layered crystal grows on the surface of each crystalline substrate without the harmful influence of the oxide films and the microcrystals.

摘要翻译： 使用的熔体容器40，用于对准结晶衬底的保持器60和熔体容器20沿着垂直延伸的中心轴依次堆积。 用于不同种类的熔体的多个熔体储存器21a至21d在熔体容器20中围绕中心轴线同心地设置，而多个使用的熔体储存器以相同的方式设置在所使用的熔体容器40中。 通过其中形成有熔体供给孔66的盖65与保持器60一起旋转，将来自相应的熔体储存器21a至21d的每个熔体的供应改变为保持器60的容纳腔63。 晶体生长通过具有使用的熔滴点孔43a至43d的盖42从保持器60排出到使用的熔体容器40。 由于熔体填充接收腔63而部分保留在相应的熔体储存器21a至21d中，所以氧化物膜和微晶都不会被引入到容纳腔63中。因此，多层晶体在每个晶体衬底的表面上生长， 氧化膜和微晶的有害影响。

公开(公告)号：US4740819A

公开(公告)日：1988-04-26

申请号：US680118

申请日：1986-06-30

申请人： Hirobumi Ouchi ,  Hiroshi Matsuda ,  Makoto Morioka ,  Masahiko Kawata ,  Kazuhiro Kurata ,  Yasushi Koga

发明人： Hirobumi Ouchi ,  Hiroshi Matsuda ,  Makoto Morioka ,  Masahiko Kawata ,  Kazuhiro Kurata ,  Yasushi Koga

IPC分类号： H01L31/00 ,  H01L31/107 ,  H01L29/90

CPC分类号： H01L31/1075

摘要： Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate, at least a first semiconductor layer which exhibits a first conductivity type, a second semiconductor layer which is disposed on said first semiconductor layer, which has a forbidden band gap greater than that of said first semiconductor layer and which exhibits the first conductivity type, and a p-n junction which is formed by a region disposed in said second semiconductor layer and exhibiting a second conductivity type; characterized by comprising a third semiconductor layer which is disposed on said second semiconductor layer, which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer is usually made of a group III-V compound semiconductor of a quaternary system. By way of example, in a case where the first semiconductor layer is formed of InGaAsP and where the second semiconductor layer is formed of InP, the third semiconductor layer is made of InGaAsP, InGaAs or the like. A photo-detective semiconductor device of low dark current can be provided.

摘要翻译： 公开了一种光检测半导体器件，其在预定半导体衬底上具有至少第一导电类型的第一半导体层，设置在所述第一半导体层上的禁止带隙大于第二半导体层的第二半导体层， 所述第一半导体层的表面具有第一导电类型，以及pn结，其由设置在所述第二半导体层中并呈现第二导电类型的区域形成; 其特征在于包括：第三半导体层，其设置在所述第二半导体层上，其具有第一导电类型并具有表面保护功能。 第三半导体层通常由四元系的III-V族化合物半导体制成。 作为示例，在第一半导体层由InGaAsP形成且第二半导体层由InP形成的情况下，第三半导体层由InGaAsP，InGaAs等构成。 可以提供低暗电流的光检测半导体器件。

公开(公告)号：US4367483A

公开(公告)日：1983-01-04

申请号：US192991

申请日：1980-10-02

申请人： Takeo Takahashi ,  Kazuhiro Kurata ,  Yuichi Ono ,  Kazuhiro Ito ,  Makoto Morioka ,  Mitsuhiro Mori ,  Ginro Takemura ,  Makoto Sakamoto ,  Masahiro Ichiki ,  Youichi Yasuda ,  Hirobumi Ouchi

发明人： Takeo Takahashi ,  Kazuhiro Kurata ,  Yuichi Ono ,  Kazuhiro Ito ,  Makoto Morioka ,  Mitsuhiro Mori ,  Ginro Takemura ,  Makoto Sakamoto ,  Masahiro Ichiki ,  Youichi Yasuda ,  Hirobumi Ouchi

IPC分类号： G02B6/42 ,  H01L27/15 ,  H01L31/12

CPC分类号： H04B10/40 ,  G02B6/4246 ,  H01L25/167 ,  H01L31/12 ,  H01L2924/0002

摘要： An optical semiconductor device includes a light emitting element disposed on a silicon sub-mount having a light receiving element formed in a surface region. By virtue of integral arrangement of the light emitting element and the light receiving element, a single lens can be used for both optical transmission and optical reception, whereby an optical communication system can be manufactured very inexpensively. Further, transmission and reception can be carried out simultaneously.

摘要翻译： 光学半导体器件包括设置在具有形成在表面区域中的光接收元件的硅子座上的发光元件。 通过发光元件和光接收元件的整体布置，可以将单个透镜用于光传输和光接收两者，从而可以非常便宜地制造光通信系统。 此外，可以同时进行发送和接收。