公开(公告)号：US4183039A

公开(公告)日：1980-01-08

申请号：US913055

申请日：1978-06-06

申请人： Masaaki Aoki ,  Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitshiuro Mori ,  Kazuhiro Kurata

发明人： Masaaki Aoki ,  Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitshiuro Mori ,  Kazuhiro Kurata

IPC分类号： H01L21/22 ,  H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0008

摘要： A light emitting semiconductor device wherein a p-n junction is defined by a ditch and wherein the ditch either extends to a low resistance layer or is away from the low resistance layer at most 1/2 of the width of the ditch is disclosed. It has the merit that the near field pattern is much more uniform than in a prior-art device.

摘要翻译： 一种发光半导体器件，其中p-n结由沟道限定，并且其中沟槽或者延伸到低电阻层或远离沟槽的至多1/2宽度的低电阻层。 具有近场图案比现有技术装置更均匀的优点。

公开(公告)号：US4212021A

公开(公告)日：1980-07-08

申请号：US41318

申请日：1979-05-22

申请人： Yuichi Ono ,  Mitsuhiro Mori ,  Makoto Morioka ,  Kazuhiro Ito ,  Masahiko Kawata ,  Kazuhiro Kurata

发明人： Yuichi Ono ,  Mitsuhiro Mori ,  Makoto Morioka ,  Kazuhiro Ito ,  Masahiko Kawata ,  Kazuhiro Kurata

IPC分类号： G02B6/42 ,  H01L33/00 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/48 ,  H01L33/58

CPC分类号： H01L33/20 ,  G02B6/4202 ,  H01L33/0025 ,  H01L33/24 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/38 ,  H01L33/483 ,  H01L33/58

摘要： In a prior-art injection type light emitting device which is constructed so that a predetermined range of a p-n junction formed by a semiconductor substrate and an epitaxial layer provided thereon may radiate, a radiation region in the p-n junction becomes larger in area than the region into which current is introduced, on account of the current spreading phenomenon. The construction of a light emitting device free from the phenomenon and a method for manufacturing the light emitting device are disclosed.

摘要翻译： 在现有技术的注入型发光器件中，其结构使得由半导体衬底形成的pn结的预定范围和设置在其上的外延层可以辐射，pn结中的辐射区域的面积比区域 由于目前的传播现象，引入了电流。 公开了一种没有现象的发光器件的结构和用于制造发光器件的方法。

公开(公告)号：US4122486A

公开(公告)日：1978-10-24

申请号：US771576

申请日：1977-02-24

申请人： Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitsuhiro Mori ,  Masahiko Kawata ,  Kazuhiro Kurata

发明人： Yuichi Ono ,  Makoto Morioka ,  Kazuhiro Ito ,  Mitsuhiro Mori ,  Masahiko Kawata ,  Kazuhiro Kurata

IPC分类号： H01L33/30 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/0025

摘要： A light emitting element made of a group III - V compound semiconductor has a p-n junction and a hetero-junction which are identical; the mixing ratio (band gap) of a p-type layer on the light emitting side is sufficiently smaller than that of an n-type layer on the opposite side. The semiconductor light-emitting element is especially useful as a light source, for optical communications, photoexcitation, etc.

摘要翻译： 由III-V族化合物半导体制成的发光元件具有相同的p-n结和异质结; 发光侧的p型层的混合比（带隙）比相对侧的n型层的混合比（带隙）充分小。 半导体发光元件作为光源特别有用，用于光通信，光激发等。

公开(公告)号：US3960618A

公开(公告)日：1976-06-01

申请号：US561795

申请日：1975-03-25

申请人： Masao Kawamura ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono ,  Sachio Ishioka ,  Kazuhiro Kurata

发明人： Masao Kawamura ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono ,  Sachio Ishioka ,  Kazuhiro Kurata

IPC分类号： B60C9/20 ,  C30B19/00 ,  C30B19/12 ,  C30B29/40 ,  H01L21/208 ,  H01L33/28 ,  H01L33/30 ,  H01L7/38

CPC分类号： B60C9/2009 ,  C30B19/12 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S438/955

摘要： In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, which is smaller than that of a saturated solution, after heating them at a temperature for crystal growth. The substrate crystal is kept in contact with the solution during a period of time sufficient to remove a surface portion of the substrate crystal. Then the substrate crystal is brought into contact with a solution for crystal growth containing a substance to be grown as solute and a crystal of the substance is grown epitaxially on an exposed clean surface of the substrate crystal.

摘要翻译： 在液相中化合物半导体晶体的外延生长工艺中，使基板晶体与含有预定量的至少一种基板晶体成分的溶质作为溶质接触，所述至少一种成分比饱和溶液 在使晶体生长的温度下加热。 衬底晶体在足以去除衬底晶体的表面部分的时间段内与溶液保持接触。 然后使衬底晶体与用于晶体生长的溶液接触，所述溶液含有要作为溶质生长的物质，并且物质的晶体在衬底晶体的暴露的清洁表面上外延生长。

公开(公告)号：US4367483A

公开(公告)日：1983-01-04

申请号：US192991

申请日：1980-10-02

申请人： Takeo Takahashi ,  Kazuhiro Kurata ,  Yuichi Ono ,  Kazuhiro Ito ,  Makoto Morioka ,  Mitsuhiro Mori ,  Ginro Takemura ,  Makoto Sakamoto ,  Masahiro Ichiki ,  Youichi Yasuda ,  Hirobumi Ouchi

发明人： Takeo Takahashi ,  Kazuhiro Kurata ,  Yuichi Ono ,  Kazuhiro Ito ,  Makoto Morioka ,  Mitsuhiro Mori ,  Ginro Takemura ,  Makoto Sakamoto ,  Masahiro Ichiki ,  Youichi Yasuda ,  Hirobumi Ouchi

IPC分类号： G02B6/42 ,  H01L27/15 ,  H01L31/12

CPC分类号： H04B10/40 ,  G02B6/4246 ,  H01L25/167 ,  H01L31/12 ,  H01L2924/0002

摘要： An optical semiconductor device includes a light emitting element disposed on a silicon sub-mount having a light receiving element formed in a surface region. By virtue of integral arrangement of the light emitting element and the light receiving element, a single lens can be used for both optical transmission and optical reception, whereby an optical communication system can be manufactured very inexpensively. Further, transmission and reception can be carried out simultaneously.

摘要翻译： 光学半导体器件包括设置在具有形成在表面区域中的光接收元件的硅子座上的发光元件。 通过发光元件和光接收元件的整体布置，可以将单个透镜用于光传输和光接收两者，从而可以非常便宜地制造光通信系统。 此外，可以同时进行发送和接收。

公开(公告)号：US4017881A

公开(公告)日：1977-04-12

申请号：US612282

申请日：1975-09-11

申请人： Yuichi Ono ,  Kazuhiro Kurata ,  Masao Kawamura ,  Makoto Morioka ,  Kazuhiro Ito

发明人： Yuichi Ono ,  Kazuhiro Kurata ,  Masao Kawamura ,  Makoto Morioka ,  Kazuhiro Ito

IPC分类号： H01L21/22 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S3/19

CPC分类号： H01L33/20 ,  H01L33/00 ,  H01L33/0008 ,  H01L33/0062 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/085

摘要： In a method for making a light emitting device having hemispherical dome type geometry, a p-conductivity type and then an n-conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a band gap wider than the two above-mentioned layers. A surface portion of these epitaxially grown layers, which is not covered by a mask deposited on the n-conductivity type layer at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape so that the n-conductivity type region is located at the central portion of the hemisphere.

摘要翻译： 在制造具有半球形圆顶型几何形状的发光器件的方法中，p型导电型和n型导电型层在由混合化合物半导体晶体制成的衬底上外延连续地生长，所述混合化合物半导体晶体的带隙宽于二 上述层。 这些外延生长层的表面部分未被掩模在沉积在n导电型层上的p型结的位置处的掩模覆盖，其中p型结被掺杂有p导电型杂质， 导电类型区域被转换为p导电型的区域包围。 晶体的另一侧形成为半球形状，使得n导电型区域位于半球的中心部分。

公开(公告)号：US4016829A

公开(公告)日：1977-04-12

申请号：US445898

申请日：1974-02-26

申请人： Kazuhiro Ito ,  Yuichi Ono ,  Kiichi Ueyanagi ,  Makoto Morioka ,  Masao Kawamura

发明人： Kazuhiro Ito ,  Yuichi Ono ,  Kiichi Ueyanagi ,  Makoto Morioka ,  Masao Kawamura

IPC分类号： C30B19/06 ,  C30B19/08 ,  C30B29/40 ,  H01L21/208 ,  B01J17/04

CPC分类号： C30B19/063 ,  C30B19/064 ,  C30B19/068

摘要： In order to eliminate non-uniformity in the temperature within the plane of a substrate that causes dispersions or variations in the characteristics of a grown layer during liquid phase epitaxial growth and to produce a grown layer having uniform characteristics, an apparatus for crystal growth according to the invention holds a substrate on a jig so that a flat surface of the substrate is arranged tangentially to an isothermal plane within the jig and aslant with respect to any position perpendicular or parallel to the axis or the center plane of the jig. Where a multiplicity of substrates are set, they are held on at least two flat surfaces which are tangential to an identical isothermal plane and which have different slopes.

摘要翻译： 为了消除在液相外延生长期间引起生长层的分散或特性变化的衬底平面内的温度不均匀并产生具有均匀特性的生长层，根据 本发明在夹具上保持基板，使得基板的平坦表面与夹具内的等温平面相切地布置，并且相对于垂直或平行于夹具的轴线或中心平面的任何位置倾斜。 在设置多个基板的情况下，它们被保持在与相同等温平面相切并且具有不同斜率的至少两个平坦表面上。

公开(公告)号：US4032945A

公开(公告)日：1977-06-28

申请号：US710307

申请日：1976-07-30

申请人： Mitsuhiro Mori ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono

发明人： Mitsuhiro Mori ,  Kazuhiro Ito ,  Makoto Morioka ,  Yuichi Ono

IPC分类号： H01L21/28 ,  H01L33/10 ,  H01L33/30 ,  H01L33/36 ,  H01L33/00

CPC分类号： H01L33/387 ,  H01L33/0025 ,  H01L33/10 ,  H01L33/20 ,  H01L33/642 ,  H01L33/647 ,  H01L33/58

摘要： A light emitting semiconductor diode comprises a first semiconductor region having a first conductivity type and a narrow forbidden band gap, a second semiconductor region, disposed on the first semiconductor region, having the first conductivity type and a low impurity concentration, a third semiconductor region, disposed on the second semiconductor region, having a second conductivity type which is opposite to the first conductivity type, and an ohmic contact disposed on the surface of the first semiconductor region, which is opposite to the second semiconductor region. The surface has a plurality of holes extending from the outer surface through the first semiconductor region toward a p-n junction between the second and third semiconductor regions, which holes are filled with a highly reflective metal having a high thermal conductivity.

公开(公告)号：US3981764A

公开(公告)日：1976-09-21

申请号：US590336

申请日：1975-06-25

申请人： Kazuhiro Ito ,  Masao Kawamura ,  Yuichi Ono ,  Makoto Morioka

发明人： Kazuhiro Ito ,  Masao Kawamura ,  Yuichi Ono ,  Makoto Morioka

IPC分类号： H05B33/14 ,  C30B19/06 ,  C30B19/08 ,  C30B19/10 ,  H01L33/22 ,  H01L33/30 ,  H05B33/12 ,  B01J17/20 ,  C01B19/00 ,  C01B27/00 ,  C01F7/00

CPC分类号： C30B19/10 ,  C30B19/063

摘要： In an epitaxial growth method in liquid phase for III-V compound semiconductor crystals a solution for crystal growth is at first heated to a temperature which is higher than the temperature of crystal growth, and then cooled to that temperature, whereby a part of the solution crystallizes out as small crystals. This solution is separated by means of a filter means into two parts, one of which contains the small crystals and the other of which does not. A substrate crystal is brought into contact with the latter.

摘要翻译： 在III-V族化合物半导体晶体的液相外延生长方法中，首先将晶体生长用溶液加热至比晶体生长温度高的温度，然后冷却至该温度，由此将一部分溶液 以小晶体结晶。 该溶液通过过滤器分离成两部分，其中一个包含小晶体，另一部分不含。 使衬底晶体与后者接触。

公开(公告)号：US4740819A

公开(公告)日：1988-04-26

申请号：US680118

申请日：1986-06-30

申请人： Hirobumi Ouchi ,  Hiroshi Matsuda ,  Makoto Morioka ,  Masahiko Kawata ,  Kazuhiro Kurata ,  Yasushi Koga

发明人： Hirobumi Ouchi ,  Hiroshi Matsuda ,  Makoto Morioka ,  Masahiko Kawata ,  Kazuhiro Kurata ,  Yasushi Koga

IPC分类号： H01L31/00 ,  H01L31/107 ,  H01L29/90

CPC分类号： H01L31/1075

摘要： Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate, at least a first semiconductor layer which exhibits a first conductivity type, a second semiconductor layer which is disposed on said first semiconductor layer, which has a forbidden band gap greater than that of said first semiconductor layer and which exhibits the first conductivity type, and a p-n junction which is formed by a region disposed in said second semiconductor layer and exhibiting a second conductivity type; characterized by comprising a third semiconductor layer which is disposed on said second semiconductor layer, which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer is usually made of a group III-V compound semiconductor of a quaternary system. By way of example, in a case where the first semiconductor layer is formed of InGaAsP and where the second semiconductor layer is formed of InP, the third semiconductor layer is made of InGaAsP, InGaAs or the like. A photo-detective semiconductor device of low dark current can be provided.

摘要翻译： 公开了一种光检测半导体器件，其在预定半导体衬底上具有至少第一导电类型的第一半导体层，设置在所述第一半导体层上的禁止带隙大于第二半导体层的第二半导体层， 所述第一半导体层的表面具有第一导电类型，以及pn结，其由设置在所述第二半导体层中并呈现第二导电类型的区域形成; 其特征在于包括：第三半导体层，其设置在所述第二半导体层上，其具有第一导电类型并具有表面保护功能。 第三半导体层通常由四元系的III-V族化合物半导体制成。 作为示例，在第一半导体层由InGaAsP形成且第二半导体层由InP形成的情况下，第三半导体层由InGaAsP，InGaAs等构成。 可以提供低暗电流的光检测半导体器件。