-
公开(公告)号：US20240080984A1
公开(公告)日：2024-03-07
申请号：US18149660
申请日：2023-01-03
Applicant: Industrial Technology Research Institute
Inventor： Yu-Wei Huang , Ching-Feng Yu , Chih-Cheng Hsiao
IPC: H05K1/18 , H01L23/538 , H01L25/065
CPC classification number: H05K1/181 , H01L23/5385 , H01L25/0655 , H01L24/16
Abstract: A package structure, including a circuit board, multiple circuit structure layers, at least one bridge structure, and at least one supporting structure, is provided. The circuit structure layer is disposed on the circuit board. The bridge structure is connected between the two adjacent circuit structure layers. The supporting structure is located between the two adjacent circuit structure layers, and the supporting structure has a first end and a second end opposite to each other and respectively connecting the bridge structure and the circuit board.
-
公开(公告)号：US20170294421A1
公开(公告)日：2017-10-12
申请号：US15632392
申请日：2017-06-26
Applicant: Industrial Technology Research Institute
Inventor： Yu-Wei Huang , Tao-Chih Chang , Chih-Ming Shen
IPC: H01L25/075 , H01L21/683 , H01L33/00 , H01L33/48 , H01L21/48 , H01L21/68 , H01L33/62
CPC classification number: H01L25/0753 , H01L21/4853 , H01L21/68 , H01L21/6835 , H01L24/00 , H01L33/0079 , H01L33/483 , H01L33/62 , H01L2221/68363 , H01L2933/0066
Abstract: A fabricating method of a semiconductor light emitting device includes disposing a plurality of non-conductive walls on a substrate. An alignment position is formed between every two adjacent non-conductive walls. A plurality of semiconductor light emitting units on a first carrier board are respectively aligned to the alignment positions. The semiconductor light emitting units are divided into a plurality of groups. The semiconductor light emitting units in one of the groups are dissociated from the first carrier board. Thus, the semiconductor light emitting units in the group fall into the corresponding alignment positions due to gravity. Each of the semiconductor light emitting units is electrically connected with the substrate through a first electrode. A conductive layer is formed on the semiconductor light emitting units. Accordingly, the semiconductor light emitting units are electrically connected together to the conductive layer through second electrodes.
-
公开(公告)号：US09721931B2
公开(公告)日：2017-08-01
申请号：US14949893
申请日：2015-11-24
Applicant: Industrial Technology Research Institute
Inventor： Yu-Wei Huang , Tao-Chih Chang , Chih-Ming Shen
IPC: H01L25/07 , H01L25/075 , H01L23/00 , H01L33/62
CPC classification number: H01L25/0753 , H01L21/4853 , H01L21/68 , H01L21/6835 , H01L24/00 , H01L33/0079 , H01L33/483 , H01L33/62 , H01L2221/68363 , H01L2933/0066
Abstract: A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.
-
公开(公告)号：US20160211415A1
公开(公告)日：2016-07-21
申请号：US14949893
申请日：2015-11-24
Applicant: Industrial Technology Research Institute
Inventor： Yu-Wei Huang , Tao-Chih Chang , Chih-Ming Shen
CPC classification number: H01L25/0753 , H01L21/4853 , H01L21/68 , H01L21/6835 , H01L24/00 , H01L33/0079 , H01L33/483 , H01L33/62 , H01L2221/68363 , H01L2933/0066
Abstract: A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.
Abstract translation: 提供了包括基板，多个半导体发光单元和多个非导电壁的半导体发光器件。 半导体发光器件以阵列方式设置在衬底上。 每个半导体发光单元具有第一电极和与第一电极相对的第二电极。 每个半导体发光单元通过第一电极电连接到基板，并且半导体发光单元通过第二电极电连接到导电层。 半导体发光单元具有不同的发射颜色。 非导电壁设置在相邻的半导体发光单元之间，以分离半导体发光单元。 还提供了半导体发光器件的制造方法。
-
公开(公告)号：US20160163940A1
公开(公告)日：2016-06-09
申请号：US14952919
申请日：2015-11-26
Applicant: Industrial Technology Research Institute
Inventor： Yu-Wei Huang , Tao-Chih Chang , Chih-Ming Shen
CPC classification number: H01L33/62 , H01L21/568 , H01L25/0753 , H01L25/0756 , H01L33/58 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/18 , H01L2224/19 , H01L2224/24137 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/92244 , H01L2924/18162 , H01L2924/00
Abstract: A package structure for a light emitting device is provided, wherein an anisotropic conductive film (ACF) and flip-chip bonding technique can be applied for bonding the light emitting device to a carrier. In addition, plural package units are stacked by performing a build-up process or a lamination process to form a full color micro-display. The package structure for the light emitting device provides simple and quick manufacturing process and is suitable for mass production. Furthermore, solutions for optical issues such as light guiding or light mixing are also provided.
Abstract translation: 提供了一种用于发光器件的封装结构，其中可以应用各向异性导电膜（ACF）和倒装芯片接合技术来将发光器件接合到载体上。 此外，通过执行积聚处理或层压处理来堆叠多个封装单元以形成全色微显示器。 用于发光器件的封装结构提供简单且快速的制造工艺，并且适用于批量生产。 此外，还提供了诸如光导或光混合的光学问题的解决方案。
-
Patent Agency Ranking
公开(公告)号：US12021018B2
公开(公告)日：2024-06-25
申请号：US17694445
申请日：2022-03-14
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Yu-Wei Huang , Shau-Fei Cheng
IPC: H01L23/498
CPC classification number: H01L23/49838 , H01L23/49816
Abstract: This disclosure provides a conductive circuit carrier module including a carrier and a conductive circuit film layer. The conductive circuit film layer is disposed on the carrier. The conductive circuit film layer has at least one conductive circuit structure including a vertical wire part and at least four horizontal wire parts. The vertical wire part extends along a thickness direction of the conductive circuit film layer. The at least four horizontal wire parts are connected to one another via the vertical wire part and extend along a direction substantially perpendicular to the vertical wire part. The at least four horizontal wire parts are symmetrically arranged or asymmetrically arranged with respect to the vertical wire part.
-
公开(公告)号：US11756865B2
公开(公告)日：2023-09-12
申请号：US17141035
申请日：2021-01-04
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Sheng-Che Hung , Shih-Hsien Wu , Yu-Wei Huang
IPC: H01L23/485 , H05K1/11 , H05K3/30 , H05K3/42
CPC classification number: H01L23/485 , H05K1/114 , H05K1/115 , H05K3/303 , H05K3/421 , H05K2201/09609
Abstract: An electronic device having a substrate includes a substrate and at least one outer layer. The substrate has a plurality of first vias. The outer layer has a plurality of second vias. The outer layer is disposed on a side of the substrate. The first vias have a larger distribution density or quantity than the second vias so that a portion of the first vias are electrically connected to the second vias, and a portion of the first vias are electrically floating.
-
公开(公告)号：US10593644B2
公开(公告)日：2020-03-17
申请号：US15222958
申请日：2016-07-29
Applicant: Industrial Technology Research Institute
Inventor： Chin-Hung Wang , Yu-Wei Huang
Abstract: An apparatus for assembling devices, comprising a plurality of actuated devices disposed on a substrate, each of the actuated devices comprising a first electrode disposed on and electrically connect to the substrate, a connecting pad disposed on the substrate, an electro-active polymer layer comprising a first surface disposed on the connecting pad and a second surface, and a second electrode disposed on the second surface of the electro-active polymer layer and electrically connected to the substrate.
-
9.发明授权公开(公告)号：US10276908B2
公开(公告)日：2019-04-30
申请号：US15468796
申请日：2017-03-24
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Yu-Wei Huang , Shih-Hsien Wu , Wei-Chung Lo
IPC: H01P3/12
Abstract: An electromagnetic wave transmission board comprises a substrate. The substrate comprises a first dielectric layer and a second dielectric layer, and the first dielectric layer is stacked on the second dielectric layer. The first dielectric layer and the second dielectric layer together form a wave guiding space. The wave guiding space is configured for transmitting electromagnetic wave.
-
公开(公告)号：US20170104027A1
公开(公告)日：2017-04-13
申请号：US14979533
申请日：2015-12-28
Applicant: Industrial Technology Research Institute
Inventor： Wei-Chung Lo , Yu-Wei Huang , Tao-Chih Chang , Chih-Ming Shen
CPC classification number: H01L27/156 , H01L25/0753 , H01L33/005 , H01L33/38 , H01L33/62 , H01L2224/48139 , H01L2933/0016 , H01L2933/0066
Abstract: In an embodiment, a light emitting device comprises a light emitting diode chip and a spherical extending electrode. The light emitting diode chip includes a semiconductor epitaxial structure, a first electrode and a second electrode. The first electrode and the second electrode are disposed on two opposite sides of the semiconductor epitaxial structure, respectively. The first electrode is disposed between the semiconductor epitaxial structure and the spherical extending electrode, and the spherical extending electrode is electrically connected to the semiconductor epitaxial structure electrically through the first electrode. The volume of the spherical extending electrode is greater than that of the light emitting diode chip.
-
-
-
-
-
-
-
-
-
Search Results
17
records
(took 0.013 seconds)
