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    OVERCOMING ERROR CORRECTION CODING MIS-CORRECTS IN NON-VOLATILE MEMORY
    2.
    发明申请
    OVERCOMING ERROR CORRECTION CODING MIS-CORRECTS IN NON-VOLATILE MEMORY 有权

    公开(公告)号：US20210117270A1

    公开(公告)日：2021-04-22

    申请号：US17133995

    申请日：2020-12-24

    Applicant: Intel Corporation

    Inventor： Krishna K. PARAT ,  Ravi H. MOTWANI ,  Rohit S. SHENOY ,  Ali KHAKIFIROOZ

    IPC: G06F11/10 ,  G11C16/26 ,  G11C11/56

    Abstract: Error correction coding (ECC) mis-corrected reads, if undetected, result in silent data corruption of a non-volatile memory device. Overcoming ECC mis-corrected reads is based on a read signature of a result of reading a page in the non-volatile memory device. An ECC mis-correct logic counts the number of bits in the end-most buckets into which the bits of the result is divided. End-most buckets that are overpopulated or starved reveal a tell-tale read signature of an ECC mis-correct. The ECC mis-correct is likely to occur when the read reference voltage level used to read the page is shifted in one direction or another to an extreme amount that risks reading data from a different page. Detecting ECC mis-corrected reads can be used to overcome the ECC mis-corrects and mitigate silent data corruption.

    STORAGE SYSTEM WITH RECONFIGURABLE NUMBER OF BITS PER CELL
    4.
    发明申请
    STORAGE SYSTEM WITH RECONFIGURABLE NUMBER OF BITS PER CELL 审中-公开

    公开(公告)号：US20190227751A1

    公开(公告)日：2019-07-25

    申请号：US16370743

    申请日：2019-03-29

    Applicant: Intel Corporation

    Inventor： Ali KHAKIFIROOZ ,  Pranav KALAVADE ,  Xin GUO ,  Aliasgar S. MADRASWALA ,  Bharat M. PATHAK

    IPC: G06F3/06 ,  G11C11/56 ,  G11C16/10

    Abstract: A memory device is designed to store data in multilevel storage cells (MLC storage cells). The memory device includes a controller that dynamically writes data to the storage cells according to a first MLC density or a second MLC density. The second density is less dense than the first density. For example, the controller can determine to use the first density when there is sufficient write bandwidth to program the storage cells at the first density. When the write throughput increases, the controller can program the same MLC storage cells at the second density instead of the first density, using the same program process and voltage.

    EMISSIVE DEVICES FOR DISPLAYS
    5.
    发明申请
    EMISSIVE DEVICES FOR DISPLAYS 审中-公开

    公开(公告)号：US20190157598A1

    公开(公告)日：2019-05-23

    申请号：US16239193

    申请日：2019-01-03

    Applicant: Intel Corporation

    Inventor： Khaled AHMED ,  Ali KHAKIFIROOZ ,  Richmond HICKS

    IPC: H01L51/50 ,  H01L33/20 ,  H01L27/32 ,  H01L51/56 ,  H01L33/24 ,  H01S5/183 ,  G02B27/01 ,  G06F3/01 ,  G02B27/10 ,  G02B6/35 ,  G02B6/27

    Abstract: Embodiments related to emissive devices for displays are discussed. Some embodiments include light emitting diodes including an electron transport layer core having a tube shape with an inner and an outer sidewall, an emission layer on the inner and outer sidewalls, and a hole transport layer on the emission layer, displays and systems including such light emitting diodes, and methods for fabricating them. Other embodiments include emissive laser devices having an emission layer between a hole transport layer and an electron transport layer and first and second metasurface mirrors adjacent to the hole transport layer and the electron transport layer, respectively, displays and systems including such emissive laser devices, and methods for fabricating them.

    DEFECTIVE BIT LINE MANAGEMENT IN CONNECTION WITH A MEMORY ACCESS
    6.
    发明申请
    DEFECTIVE BIT LINE MANAGEMENT IN CONNECTION WITH A MEMORY ACCESS 有权

    公开(公告)号：US20210193200A1

    公开(公告)日：2021-06-24

    申请号：US17195579

    申请日：2021-03-08

    Applicant: Intel Corporation

    Inventor： Ali KHAKIFIROOZ ,  Pranav KALAVADE ,  Ravi H. MOTWANI ,  Chang Wan HA

    IPC: G11C7/12 ,  G06F11/07 ,  G11C16/14 ,  G11C16/34 ,  G11C29/44

    Abstract: Examples herein relate to determining a number of defective bit lines in a memory region prior to applying a program or erase voltages. If a threshold number of bit lines that pass during a program or erase verify operation is used to determine if the program or erase operation passes or fails, the determined number of defective bit lines can be used to adjust the determined number of passes or fails. In some cases, examples described herein can avoid use of extra bit lines and look-up table circuitry to use in place of defective bit lines and save silicon space and cost associated with the use of extra bit-lines. In some examples, a starting magnitude of a program voltage signal can be determined by considering a number of defective bit lines. In some examples, identification of open or shorted bit lines can be used to identify read operations involving those open or shorted bit lines as weak in connection with performing soft bit read correction.

    MICRO LIGHT-EMITTING DIODE (LED) ELEMENTS AND DISPLAY
    7.
    发明申请
    MICRO LIGHT-EMITTING DIODE (LED) ELEMENTS AND DISPLAY 审中-公开

    公开(公告)号：US20190393377A1

    公开(公告)日：2019-12-26

    申请号：US16563558

    申请日：2019-09-06

    Applicant: Intel Corporation

    Inventor： Khaled AHMED ,  Anup PANCHOLI ,  Ali KHAKIFIROOZ

    IPC: H01L33/02 ,  H01L33/38 ,  H01L33/06 ,  H01L33/04 ,  H01L33/24

    Abstract: Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.

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