公开(公告)号：US08295318B2

公开(公告)日：2012-10-23

申请号：US12906514

申请日：2010-10-18

申请人： Kazuyuki Matsushita ,  Takashi Kondo ,  Kazutaka Takeda

发明人： Kazuyuki Matsushita ,  Takashi Kondo ,  Kazutaka Takeda

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/18386 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0282 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/18394 ,  H01S5/209 ,  H01S2301/166

摘要： A vertical cavity surface emitting laser including a substrate, a first semiconductor multilayer film reflector formed on the substrate, an active region formed on the first semiconductor multilayer film reflector, a second semiconductor multilayer film reflector formed on the active region, an electrode formed on the second semiconductor multilayer film reflector, a light absorption layer, and a light transmission layer. In the electrode, a light emitting aperture is formed. The light absorption layer is formed in a peripheral region of the light emitting aperture, and absorbs emitted light. The light transmission layer is composed of a material which the emitted light can pass through, and formed in a central region of the light emitting aperture. Thicknesses of the light absorption layer and the light transmission layer are selected so that phases of light from the light absorption layer and from the light transmission layer are adjusted.

摘要翻译： 一种垂直空腔表面发射激光器，包括基板，形成在基板上的第一半导体多层膜反射器，形成在第一半导体多层膜反射器上的有源区，形成在有源区上的第二半导体多层膜反射器， 第二半导体多层膜反射器，光吸收层和透光层。 在电极中形成发光孔。 光吸收层形成在发光孔的周边区域，并吸收发光。 光透射层由发射光可以通过的材料构成，并形成在发光孔的中心区域。 选择光吸收层和透光层的厚度，从而调节来自光吸收层和光透射层的光的相位。

公开(公告)号：US20130034922A1

公开(公告)日：2013-02-07

申请号：US13650410

申请日：2012-10-12

申请人： Kazutaka Takeda ,  Masahiro Yoshikawa ,  Kazuyuki Matsushita

发明人： Kazutaka Takeda ,  Masahiro Yoshikawa ,  Kazuyuki Matsushita

IPC分类号： H01L33/10

CPC分类号： H01S5/18311 ,  H01S5/005 ,  H01S5/02212 ,  H01S5/0425 ,  H01S5/18391 ,  H01S2301/166 ,  H01S2301/176

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域 第二半导体多层反射器; 由所述第二半导体多层反射器形成到所述第一半导体多层反射器的柱状结构; 形成在柱状结构内部并具有由氧化区域包围的导电区域的电流变窄层; 形成在所述柱状结构的顶部的第一电极，电连接到所述第二半导体多层反射器并限定光束窗; 第一绝缘膜，由具有第一折射率的材料构成，并形成在第一电极上以覆盖光束窗; 以及第二绝缘膜，其由具有第二折射率的材料构成，并形成在第一绝缘膜上，半导体的半径小于导电区域的半径。

公开(公告)号：US20110150500A1

公开(公告)日：2011-06-23

申请号：US12775683

申请日：2010-05-07

申请人： Kazuyuki Matsushita ,  Hideo Nakayama ,  Masahiro Yoshikawa ,  Kazutaka Takeda

发明人： Kazuyuki Matsushita ,  Hideo Nakayama ,  Masahiro Yoshikawa ,  Kazutaka Takeda

IPC分类号： H04B10/04 ,  H01S5/18 ,  H01L21/28 ,  G11B7/00

CPC分类号： H01S5/18313 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18347 ,  H01S5/18377 ,  H01S5/18394

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed on the substrate; a current narrowing layer that is formed inside of the columnar structure, and has a conductive region surrounded by an oxidization region selectively oxidized; a first electrode that is formed at a top of the columnar structure, and defines a beam window; a first insulating film that covers the beam window; and a second insulating film of which a second refractive index is larger than the first refractive index. A reflection ratio in a second region where the second insulating film is formed is lower than a reflection ratio in a first region where only the first insulating film is formed.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域 第二半导体多层反射器; 形成在基板上的柱状结构; 形成在柱状结构内部的电流变窄层，具有被氧化区域包围的导电区域选择性氧化; 第一电极，其形成在所述柱状结构的顶部，并且限定梁窗; 覆盖梁窗的第一绝缘膜; 第二绝缘膜的第二折射率大于第一折射率。 在形成第二绝缘膜的第二区域中的反射率低于仅形成第一绝缘膜的第一区域中的反射率。

公开(公告)号：US20110135318A1

公开(公告)日：2011-06-09

申请号：US12781175

申请日：2010-05-17

申请人： Kazutaka Takeda ,  Masahiro Yoshikawa ,  Kazuyuki Matsushita

发明人： Kazutaka Takeda ,  Masahiro Yoshikawa ,  Kazuyuki Matsushita

IPC分类号： H04B10/04 ,  H01S5/183 ,  H01L33/00 ,  G11B7/00

CPC分类号： H01S5/18311 ,  H01S5/005 ,  H01S5/02212 ,  H01S5/0425 ,  H01S5/18391 ,  H01S2301/166 ,  H01S2301/176

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域 第二半导体多层反射器; 由所述第二半导体多层反射器形成到所述第一半导体多层反射器的柱状结构; 形成在柱状结构内部并具有由氧化区域包围的导电区域的电流变窄层; 形成在所述柱状结构的顶部的第一电极，电连接到所述第二半导体多层反射器并限定光束窗; 第一绝缘膜，由具有第一折射率的材料构成，并形成在第一电极上以覆盖光束窗; 以及第二绝缘膜，其由具有第二折射率的材料构成，并形成在第一绝缘膜上，半导体的半径小于导电区域的半径。

公开(公告)号：US08465993B2

公开(公告)日：2013-06-18

申请号：US13650410

申请日：2012-10-12

申请人： Kazutaka Takeda ,  Masahiro Yoshikawa ,  Kazuyuki Matsushita

发明人： Kazutaka Takeda ,  Masahiro Yoshikawa ,  Kazuyuki Matsushita

IPC分类号： H01L33/10

CPC分类号： H01S5/18311 ,  H01S5/005 ,  H01S5/02212 ,  H01S5/0425 ,  H01S5/18391 ,  H01S2301/166 ,  H01S2301/176

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域 第二半导体多层反射器; 由所述第二半导体多层反射器形成到所述第一半导体多层反射器的柱状结构; 形成在柱状结构内部并具有由氧化区域包围的导电区域的电流变窄层; 形成在所述柱状结构的顶部的第一电极，电连接到所述第二半导体多层反射器并限定光束窗; 第一绝缘膜，由具有第一折射率的材料构成，并形成在第一电极上以覆盖光束窗; 以及第二绝缘膜，其由具有第二折射率的材料构成，并形成在第一绝缘膜上，半导体的半径小于导电区域的半径。

公开(公告)号：US09166370B2

公开(公告)日：2015-10-20

申请号：US13456909

申请日：2012-04-26

申请人： Takashi Kondo ,  Hideo Nakayama ,  Kazutaka Takeda ,  Fumio Koyama

发明人： Takashi Kondo ,  Hideo Nakayama ,  Kazutaka Takeda ,  Fumio Koyama

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/10 ,  H01S5/32 ,  H01S5/20

CPC分类号： H01S5/18358 ,  H01S5/1039 ,  H01S5/18311 ,  H01S5/209 ,  H01S5/3211

摘要： A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.

摘要翻译： 垂直腔表面发射激光器包括第一半导体多层反射器，谐振器和第二半导体多层反射器。 第一半导体多层反射器形成在基板上，并且通过堆叠具有较高折射率的高折射率层和折射率相对较低的低折射率层而构成。 谐振器包括形成在第一半导体多层反射器上的有源层。 第二半导体多层反射器通过层叠高折射率层和低折射率层而构成。 谐振器包括垂直于有源层设置的一对间隔层和形成在一对间隔层的一侧的谐振器延伸区域。 谐振器延伸区域包含其中具有晶体缺陷的能级高于没有晶体缺陷的一般能级的材料。

公开(公告)号：US08659035B2

公开(公告)日：2014-02-25

申请号：US13476526

申请日：2012-05-21

申请人： Takashi Kondo ,  Taku Kinoshita ,  Kazutaka Takeda

发明人： Takashi Kondo ,  Taku Kinoshita ,  Kazutaka Takeda

IPC分类号： H01L33/00 ,  H01L29/00 ,  H01L21/332

CPC分类号： B41J2/45 ,  H01L27/156 ,  H01L33/0016 ,  H01L33/10 ,  H01L33/40

摘要： Provided is a light-emitting device including a semiconductor substrate of a first conductivity type, a semiconductor multilayer reflection mirror of the first conductivity type, formed on the semiconductor substrate, a first semiconductor layer of the first conductivity type, formed on the semiconductor multilayer reflection mirror, a second semiconductor layer of a second conductivity type, formed on the first semiconductor layer, a third semiconductor layer of the first conductivity type, formed on the second semiconductor layer, a fourth semiconductor layer of the second conductivity type, formed on the third semiconductor layer, a first electrode formed on a rear surface of the semiconductor substrate, and a second electrode formed on the fourth semiconductor layer, wherein the semiconductor multilayer reflection mirror includes a first selectively oxidized region and a first conductive region adjacent to the first oxidized region, and the first conductive region electrically connects the semiconductor substrate and the first semiconductor layer.

摘要翻译： 本发明提供一种发光器件，其包括：第一导电类型的半导体衬底，形成在半导体衬底上的第一导电类型的半导体多层反射镜，形成在半导体多层反射层上的第一导电类型的第一半导体层 反射镜，形成在第一半导体层上的第二导电类型的第二半导体层，形成在第二半导体层上的第一导电类型的第三半导体层，形成在第三半导体层上的第三导电类型的第四半导体层 半导体层，形成在半导体衬底的后表面上的第一电极和形成在第四半导体层上的第二电极，其中半导体多层反射镜包括第一选择性氧化区域和与第一氧化区域相邻的第一导电区域 ，并且第一导电区域电连接 包括半导体衬底和第一半导体层。

公开(公告)号：US08692264B2

公开(公告)日：2014-04-08

申请号：US13564295

申请日：2012-08-01

申请人： Taku Kinoshita ,  Michiaki Murata ,  Takashi Kondo ,  Kazutaka Takeda ,  Hideo Nakayama

发明人： Taku Kinoshita ,  Michiaki Murata ,  Takashi Kondo ,  Kazutaka Takeda ,  Hideo Nakayama

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L33/0016 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/14

摘要： Provided is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein the island structure includes a first side surface having a first depth such that the first side surface does not reach the current confining layer in a formation region of the shift thyristor and a second side surface having a second depth such that the second side surface reaches at least the current confining layer in a formation region of the light-emitting thyristor, and an oxidized region selectively oxidized from the second side surface is formed in the current confining layer in the formation region of the light-emitting thyristor.

摘要翻译： 提供了一种发光元件，包括半导体衬底，形成在半导体衬底上的岛状结构，至少包括电流限制层和p型和n型半导体层，形成在岛状结构中的发光晶闸管和 具有pnpn结构和形成在岛状结构中并具有pnpn结构的位移晶闸管，其中岛状结构包括具有第一深度的第一侧表面，使得第一侧表面在形成区域中不到达电流限制层 的第二侧表面和第二侧表面，使得第二侧表面至少达到发光晶闸管的形成区域中的电流限制层，并且形成从第二侧表面选择性氧化的氧化区域 在发光晶闸管的形成区域的电流限制层中。

公开(公告)号：US08311073B2

公开(公告)日：2012-11-13

申请号：US12879541

申请日：2010-09-10

申请人： Kazutaka Takeda ,  Takashi Kondo ,  Hideaki Ozawa

发明人： Kazutaka Takeda ,  Takashi Kondo ,  Hideaki Ozawa

IPC分类号： H01S3/08

CPC分类号： H01S5/18388 ,  H01L2224/48091 ,  H01S5/0071 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/18361 ,  H01S5/2215 ,  H01S5/3215 ,  H01L2924/00014

摘要： A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductive type formed on the active region; and an intermediate semiconductor layer of a first conductive type or a second conductive type formed under the first semiconductor multilayer reflector or above the second semiconductor multilayer reflector. An oxidized region formed by oxidizing a part of the intermediate semiconductor layer and an un-oxidized region contacting with the oxidized region are formed in the intermediate semiconductor layer, the un-oxidized region is electrically connected to the first or second semiconductor multilayer reflector, and a beam generated in the active region is reflected at a boundary between the oxidized region and the un-oxidized region to a direction parallel to a principal surface of the substrate, and is emitted from a side surface of the intermediate semiconductor layer.

摘要翻译： 一种半导体激光器，包括：基板; 形成在所述基板上的第一导电类型的第一半导体多层反射器; 形成在所述第一半导体多层反射器上的有源区; 形成在有源区上的第二导电类型的第二半导体多层反射器; 以及形成在所述第一半导体多层反射器之下或所述第二半导体多层反射器之下的第一导电类型或第二导电类型的中间半导体层。 在中间半导体层中形成通过氧化中间半导体层的一部分而形成的氧化区域和与氧化区域接触的未氧化区域，未氧化区域与第一或第二半导体多层反射体电连接， 在有源区域中产生的光束在氧化区域和未氧化区域之间的边界处反射到与基板的主表面平行的方向，并且从中间半导体层的侧表面发射。

公开(公告)号：US20110182316A1

公开(公告)日：2011-07-28

申请号：US12843361

申请日：2010-07-26

申请人： Takashi KONDO ,  Kazutaka Takeda

发明人： Takashi KONDO ,  Kazutaka Takeda

IPC分类号： H01S5/06

CPC分类号： H01S5/18358 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0655 ,  H01S5/1039 ,  H01S5/18313 ,  H01S5/3432

摘要： A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers. A cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector is greater than an oscillation wavelength.

摘要翻译： 表面发射半导体激光器包括：基板; 第一导电类型的第一半导体多层反射器，其形成在所述基板上并且由相对较高折射率层和相对低折射率层的叠层组成; 形成在所述第一半导体多层反射体上并且包括有源区的空腔区域; 以及第二导电类型的第二半导体多层反射器，其形成在空腔区域上并且由相对较高折射率层和相对低折射率层的堆叠对组成。 包括空腔区域和第一半导体多层反射器和第二半导体多层反射器之间的有源区域的空腔的空腔长度大于振荡波长。