公开(公告)号：US12198902B2

公开(公告)日：2025-01-14

申请号：US17432003

申请日：2020-03-03

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  John Daugherty ,  Satish Srinivasan ,  David Joseph Wetzel

IPC: B32B15/04 ,  B32B17/06 ,  H01J37/32 ,  C23C24/04 ,  H01L21/687

Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.

公开(公告)号：US10725485B2

公开(公告)日：2020-07-28

申请号：US15824447

申请日：2017-11-28

Applicant: LAM RESEARCH CORPORATION

Inventor： David Joseph Wetzel ,  Alexander Bleakie ,  Jacob Frederick Theisen

IPC: G05D23/24 ,  G05D23/19 ,  G01K13/02 ,  H04L21/00 ,  G01K7/42 ,  G01R21/14 ,  G01R21/127

Abstract: A temperature controller for a substrate support in a substrate processing system includes a power parameter module configured to calculate a power parameter indicative of power supplied to the substrate support. A coolant temperature parameter module configured to calculate a coolant temperature parameter indicative of a temperature of a coolant supplied to the substrate support. A heat transfer gas parameter module is configured to calculate a heat transfer gas parameter indicative of flow rates of a heat transfer gas supplied to the substrate support. A temperature calculation module is configured to calculate a temperature of the substrate support using the power parameter, the coolant temperature parameter, and the heat transfer gas parameter.

公开(公告)号：US12249490B2

公开(公告)日：2025-03-11

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Douglas Detert ,  John Daugherty ,  Pankaj Hazarika ,  Satish Srinivasan ,  Nash W. Anderson ,  John Michael Kerns ,  Robin Koshy ,  David Joseph Wetzel ,  Lei Liu ,  Eric A. Pape

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US12129569B2

公开(公告)日：2024-10-29

申请号：US17795509

申请日：2021-02-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  David Joseph Wetzel ,  John Daugherty ,  Hong Shih ,  Satish Srinivasan ,  Yuanping Song ,  Johnny Pham ,  Yiwei Song ,  Christopher Kimball

IPC: C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32 ,  H01L21/683

CPC classification number: C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12667 ,  Y10T428/12806

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.