公开(公告)号：US11837441B2

公开(公告)日：2023-12-05

申请号：US17595505

申请日：2020-05-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20180347035A1

公开(公告)日：2018-12-06

申请号：US16044357

申请日：2018-07-24

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Bhadri N. Varadarajan ,  Bo Gong ,  Zhe Gui

IPC: C23C16/32 ,  C23C16/452 ,  C23C16/505 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/045 ,  C23C16/325 ,  C23C16/452 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L29/4983 ,  H01L29/4991 ,  H01L2221/1047

Abstract: A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

公开(公告)号：US20240234091A9

公开(公告)日：2024-07-11

申请号：US18493614

申请日：2023-10-24

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20240136153A1

公开(公告)日：2024-04-25

申请号：US18493614

申请日：2023-10-23

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20220216037A1

公开(公告)日：2022-07-07

申请号：US17595505

申请日：2020-05-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  H01L21/027 ,  C23C16/517 ,  C23C16/52 ,  H01L21/311 ,  H01L21/3213

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20230357921A1

公开(公告)日：2023-11-09

申请号：US18247060

申请日：2021-09-27

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Ragesh Puthenkovilakam ,  Kapu Sirish Reddy ,  Chin-Jui Hsu

IPC: C23C16/04

CPC classification number: C23C16/042

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate at high temperatures using an additive that reduces a competing etch process. Sulfur hexafluoride may be used to improve the deposition rate of the AHM with minimal changes to the properties of the resulting film.

公开(公告)号：US20220282366A1

公开(公告)日：2022-09-08

申请号：US17753208

申请日：2020-08-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Ragesh Puthenkovilakam ,  Gordon Alex Macdonald ,  Shaoqing Zhang ,  Shih-Ked Lee ,  Jun Xue ,  Samantha S.H. Tan ,  Xizhu Zhao ,  Mary Anne Manumpil ,  Eric A. Hudson ,  Chin-Jui Hsu

IPC: C23C16/26 ,  C23C16/04 ,  C23C16/40

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

公开(公告)号：US20200027725A1

公开(公告)日：2020-01-23

申请号：US16041153

申请日：2018-07-20

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Bhadri N. Varadarajan

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/32

Abstract: A boron nitride, boron carbide, or boron carbonitride film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. A boron-containing precursor is provided to a reaction chamber, where the boron-containing precursors has at least one boron atom bonded to a hydrogen atom. Radical species, such as hydrogen radical species, are provided from a remote plasma source and into the reaction chamber at a substantially low energy state or ground state. A hydrocarbon precursor may be flowed along with the boron-containing precursor, and a nitrogen-containing plasma species may be introduced along with the radical species from the remote plasma source and into the reaction chamber. The boron-containing precursor may interact with the radical species along with one or both of the hydrocarbon precursor and the nitrogen-containing precursor to deposit the boron nitride, boron carbide, or boron carbonitride film.

公开(公告)号：US20180330945A1

公开(公告)日：2018-11-15

申请号：US16044371

申请日：2018-07-24

Applicant: Lam Research Corporation

Inventor： Bhadri N. Varadarajan ,  Matthew Scott Weimer ,  Galbokka Hewage Layan Savithra ,  Bo Gong ,  Zhe Gui

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/045 ,  C23C16/325 ,  C23C16/452 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L29/4983 ,  H01L29/4991 ,  H01L2221/1047

Abstract: A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.