公开(公告)号：US20030022430A1

公开(公告)日：2003-01-30

申请号：US09910753

申请日：2001-07-24

申请人： MOTOROLA, INC.

发明人： Rudy M. Emrick ,  Bruce Allen Bosco ,  John E. Holmes ,  Steven James Franson ,  Stephen Kent Rockwell

IPC分类号： H01L031/0328 ,  H01L021/336 ,  H01L029/76 ,  H01L031/0336 ,  H01L031/072 ,  H01L031/109 ,  H01L021/8249 ,  H01L029/94 ,  H01L031/119 ,  H01L031/113 ,  H01L031/062

CPC分类号： H01L29/66848 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01S5/021 ,  H01S5/0261 ,  H01S2301/173

摘要： A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

摘要翻译： 半导体结构包括单晶硅衬底，覆盖单晶硅衬底的非晶氧化物材料，覆盖在非晶氧化物材料上的单晶钙钛矿氧化物材料，以及覆盖单晶钙钛矿氧化物材料的单晶化合物半导体材料。 复合晶体管包括具有形成在单晶硅衬底中的第一有源区的第一晶体管，形成在单晶化合物半导体材料中的第二有源区的第二晶体管，以及用于控制第一晶体管和第二晶体管的模式控制端。

公开(公告)号：US20030015768A1

公开(公告)日：2003-01-23

申请号：US09909936

申请日：2001-07-23

申请人： MOTOROLA, INC.

发明人： Bruce Allen Bosco ,  Steven James Franson ,  John E. Holmes ,  Nestor J. Escalera ,  Rudy M. Emrick ,  Stephen K. Rockwell

IPC分类号： H01L027/15 ,  H01L031/12 ,  H01L033/00 ,  H01L029/00 ,  H01L031/0328

CPC分类号： G02B6/122 ,  G02B6/12004 ,  G02B6/131 ,  G02B6/4295 ,  G02B6/43 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12109 ,  G02B2006/12135 ,  G02B2006/12145 ,  G02B2006/12164 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/15 ,  H01L2924/00011 ,  H01S5/0071 ,  H01S5/02248 ,  H01L2224/80001

摘要： Microelectromechanical (MEMS) devices are integrated with high frequency devices on a monolithic substrate or wafer. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. MEMS devices, such as a switch, a variable capacitance device or a temperature control structure, are formed in the base monocrystalline substrate. High frequency devices, such as transistors or diodes, are formed in the overlaying layer of monocrystalline materials.

摘要翻译： 微机电（MEMS）器件与单片衬底或晶片上的高频器件集成。 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 在基底单晶衬底中形成诸如开关，可变电容器件或温度控制结构的MEMS器件。 在单晶材料的覆盖层中形成高频器件，例如晶体管或二极管。

公开(公告)号：US20030020121A1

公开(公告)日：2003-01-30

申请号：US09911464

申请日：2001-07-25

申请人： MOTOROLA, INC.

发明人： Stephen Kent Rockwell ,  John E. Holmes ,  Nestor Javier Escalera ,  Steven James Franson

IPC分类号： H01L029/76 ,  H01L029/94 ,  H01L021/8249 ,  H01L021/8222

CPC分类号： H01L27/0605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258

摘要： A semiconductor structure for a high frequency monolithic switch matrix includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a high frequency semiconductor integrated formed in and over the monocrystalline compound semiconductor material having one or more input ports and one or more output ports. The high frequency semiconductor integrated circuit also includes a high frequency switch circuit that is electrically coupled to a switch driver control circuit that is fabricated on the monocrystalline compound semiconductor material and which provides the DC signals required to control the high frequency circuit.

摘要翻译： 用于高频单片开关矩阵的半导体结构包括单晶硅衬底，覆盖单晶硅衬底的无定形氧化物材料，覆盖在非晶氧化物材料上的单晶钙钛矿氧化物材料，覆盖单晶钙钛矿氧化物材料的单晶化合物半导体材料，以及 集成形成在具有一个或多个输入端口和一个或多个输出端口的单晶化合物半导体材料中和之上的高频半导体。 高频半导体集成电路还包括高频开关电路，其电耦合到制造在单晶化合物半导体材料上的开关驱动器控制电路，并提供控制高频电路所需的DC信号。

公开(公告)号：US20030020069A1

公开(公告)日：2003-01-30

申请号：US09911459

申请日：2001-07-25

申请人： MOTOROLA, INC.

发明人： John E. Holmes ,  Bruce Allen Bosco ,  Rudy M. Emrick ,  Steven James Franson ,  Nestor Javier Escalera ,  Stephen Kent Rockwell

IPC分类号： H01L031/0256 ,  H01L029/47

CPC分类号： H01L21/8258 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/522 ,  H01L23/66 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2223/6627 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/80001

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A variety of transmission media are disclosed which capitalize on the materials and devices disclosed herein.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 公开了利用本文公开的材料和装置的各种传输介质。

公开(公告)号：US20030020107A1

公开(公告)日：2003-01-30

申请号：US09911543

申请日：2001-07-25

申请人： MOTOROLA, INC.

发明人： Bruce Allen Bosco ,  Nestor Javier Escalera ,  Rudy M. Emrick ,  John E. Holmes ,  Steven James Franson

IPC分类号： H01L027/108 ,  H01L029/76 ,  H01L029/94 ,  H01L031/119

CPC分类号： H01L29/66181 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/051 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05599

摘要： Various semiconductor device structures that include one or more capacitors can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.

摘要翻译： 可以使用具有单晶硅衬底，覆盖在单晶硅衬底上的无定形氧化物材料，覆盖无定形氧化物材料的单晶钙钛矿氧化物材料的半导体结构来形成包括一个或多个电容器的各种半导体器件结构; 以及覆盖单晶钙钛矿氧化物材料的单晶化合物半导体材料和/或其它类型的材料如金属和非金属。

公开(公告)号：US20030020070A1

公开(公告)日：2003-01-30

申请号：US09911478

申请日：2001-07-25

申请人： MOTOROLA, INC.

发明人： Stephen Kent Rockwell ,  Steven James Franson ,  John E. Holmes

IPC分类号： H01L031/0256

CPC分类号： H01L21/02488 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/7605 ,  H01L21/762 ,  H01L21/8258 ,  H01L27/0605

摘要： A semiconductor structure for isolating high frequency circuitry includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, a plurality of high frequency circuits formed in and over the monocrystalline compound semiconductor material, and at least one embedded isolation wall lying within the compound semiconductor material to isolate the high frequency circuits.

摘要翻译： 用于隔离高频电路的半导体结构包括单晶硅衬底，覆盖单晶硅衬底的无定形氧化物材料，覆盖非晶氧化物材料的单晶钙钛矿氧化物材料，覆盖单晶钙钛矿氧化物材料的单晶化合物半导体材料， 形成在单晶化合物半导体材料中和之上的高频电路，以及位于化合物半导体材料内的隔离高频电路的至少一个嵌入式隔离壁。

公开(公告)号：US20030015730A1

公开(公告)日：2003-01-23

申请号：US09905903

申请日：2001-07-17

申请人： Motorola, Inc.

发明人： Bruce Allen Bosco ,  Rudy M. Emrick ,  Steven James Franson

IPC分类号： H01L031/0328 ,  H01L029/00

CPC分类号： H01L21/8258 ,  H01L23/642 ,  H01L23/645 ,  H01L27/08 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.

摘要翻译： 公开了一种用于大功率器件的中间阻抗匹配和稳定的集成电路。 在单晶衬底上生长的单晶材料的高质量外延层使得能够形成阻抗匹配和稳定性电路，以将其放置在与有源器件相同的衬底上。 此外，通过使用有源的歧管形成电容器的板，可以紧凑地制造串联电感和并联电容器的阻抗匹配网络，以将输出阻抗增加到中间电平。 有源器件的歧管也用于形成电容器以向高功率有源器件提供稳定性。

公开(公告)号：US20030013241A1

公开(公告)日：2003-01-16

申请号：US09905116

申请日：2001-07-16

申请人： MOTOROLA, INC.

发明人： Stephen Kent Rockwell ,  Steven James Franson ,  Bruce Allen Bosco

IPC分类号： H01L021/336

CPC分类号： H01L27/0605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/823487 ,  H01L21/8258 ,  H01L29/8122

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Also disclosed is a semiconductor structure incorporating a plurality of field effect transistors in a monolithic substrate wherein an amorphous oxide material overlies the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlies the amorphous oxide material, a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material and forms a vertical conductive channel having a vertical conductive pathway comprising a doped n type III-V semiconductor material, and contacts arrayed vertically along the conductive channel forming a source, gate and drain for a vertical field effect transistor.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 还公开了在单片基板中结合有多个场效应晶体管的半导体结构，其中非晶氧化物材料覆盖在单晶硅衬底上，单晶钙钛矿氧化物材料覆盖在非晶氧化物材料上，单晶化合物半导体材料覆盖单晶钙钛矿氧化物材料 并且形成具有垂直导电通路的垂直导电通道，该导电通路包括掺杂的n型III-V族半导体材料，以及沿着形成用于垂直场效应晶体管的源极，栅极和漏极的导电沟道排列的触点。

公开(公告)号：US20030015756A1

公开(公告)日：2003-01-23

申请号：US09909939

申请日：2001-07-23

申请人： MOTOROLA, INC.

发明人： Bryan Keith Farber ,  Steven James Franson ,  John E. Holmes ,  Rudy M. Emrick

IPC分类号： H01L029/06 ,  H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC分类号： H01L21/8258 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8221 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01L2224/80001

摘要： A semiconductor structure for integrated control of an active subcircuit includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, the active subcircuit in the monocrystalline compound semiconductor material, and a bias subcircuit in the monocrystalline silicon substrate and electrically coupled to the active subcircuit to bias the active subcircuit.

摘要翻译： 用于集成控制有源分支电路的半导体结构包括单晶硅衬底，覆盖单晶硅衬底的无定形氧化物材料，覆盖非晶氧化物材料的单晶钙钛矿氧化物材料，覆盖单晶钙钛矿氧化物材料的单晶化合物半导体材料， 单晶化合物半导体材料中的有源子电路，以及单晶硅衬底中的偏置子电路，并且电耦合到有源子电路以偏置有源子电路。

公开(公告)号：US20030015707A1

公开(公告)日：2003-01-23

申请号：US09905869

申请日：2001-07-17

申请人： MOTOROLA, INC.

发明人： Bruce Allen Bosco ,  Rudy M. Emrick ,  Steven James Franson ,  Nestor Javier Escalera ,  Bryan K. Farber

IPC分类号： H01L029/04

CPC分类号： H03F3/602 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H03F3/087 ,  H03F2200/451

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radio frequency, optical, logic and other circuits in both silicon and compound semiconductor materials may be combined and interconnected in a single semiconductor structure.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 硅和化合物半导体材料中的射频，光学，逻辑和其他电路可以在单个半导体结构中组合和互连。