公开(公告)号：US08836100B2

公开(公告)日：2014-09-16

申请号：US12955011

申请日：2010-11-29

Applicant: Mary Nadeau ,  Vipulkumar Patel ,  Prakash Gothoskar ,  John Fangman ,  John Matthew Fangman ,  Mark Webster

Inventor： Mary Nadeau ,  Vipulkumar Patel ,  Prakash Gothoskar ,  John Fangman ,  John Matthew Fangman ,  Mark Webster

IPC: H01L23/06 ,  G02B6/38

CPC classification number: G02B7/025 ,  G02B6/4228 ,  G02B6/4239 ,  G02B7/003 ,  H01L23/345 ,  H01L23/544 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2223/54426 ,  H01L2224/26175 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/83121 ,  H01L2224/83143 ,  H01L2224/83192 ,  H01L2224/83234 ,  H01L2224/83385 ,  H01L2224/83862 ,  H01L2924/14 ,  Y10T428/24479 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An arrangement for improving adhesive attachment of micro-components in an assembly utilizes a plurality of parallel-disposed slots formed in the top surface of the substrate used to support the micro-components. The slots are used to control the flow and “shape” of an adhesive “dot” so as to quickly and accurately attach a micro-component to the surface of a substrate. The slots are formed (preferably, etched) in the surface of the substrate in a manner that lends itself to reproducible accuracy from one substrate to another. Other slots (“channels”) may be formed in conjunction with the bonding slots so that extraneous adhesive material will flow into these channels and not spread into unwanted areas.

Abstract translation: 用于改善组件中微组件的粘合附着的装置利用形成在用于支撑微组件的衬底顶表面中的多个平行布置的槽。 这些槽用于控制粘合剂“点”的流动和“形状”，以便将微组件快速且精确地附着在基板的表面上。 在衬底的表面中形成（优选地，蚀刻）狭槽，使其自身具有从一个衬底到另一个衬底的可再现精度。 其它槽（“通道”）可以与结合槽结合形成，使得外来粘合剂材料将流入这些通道并且不会扩散到不需要的区域。

公开(公告)号：US08618625B2

公开(公告)日：2013-12-31

申请号：US13038470

申请日：2011-03-02

Applicant: Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

Inventor： Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

IPC: H01L31/0224

CPC classification number: H01L31/101 ,  H01L31/1085

Abstract: A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.

Abstract translation: 平面的基于波导的硅肖特基势垒光电检测器包括场板形式的第三端子，以提高检测器的响应度。 优选地，在其中形成其它硅化物接触区域的处理步骤期间形成用于检测区域的硅化物。 场板优选地形成为第一或第二CMOS金属化层的一部分，并且通过施加的电压来控制，以修改检测器硅化物层附近的电场。 通过修改电场，器件的响应度被“调谐”，以相对于器件的肖特基势垒调节“热”载流子（电子或空穴，取决于硅的导电性）的动量。 所施加的电位功能与“硅”载体的优势方向“正常”硅硅化物界面的动量方向相一致，允许增加的数量移动到肖特基势垒上并增加产生的光电流。

公开(公告)号：US08364042B2

公开(公告)日：2013-01-29

申请号：US12796868

申请日：2010-06-09

Applicant: Kalpendu Shastri ,  Bipin Dama ,  Mark Webster

Inventor： Kalpendu Shastri ,  Bipin Dama ,  Mark Webster

IPC: H04B10/00

CPC classification number: H04B10/801 ,  H04B10/505 ,  H04B10/516 ,  H04B10/524 ,  H04L7/0008 ,  H04L7/0075

Abstract: An optical interconnection arrangement for use in high data applications is presented that eliminates the need for extensive serialization/de-serialization (SERDES) functionality by utilizing pulse amplitude modulation (PAM) techniques to represent the data in the optical domain while utilizing a separate channel for transmitting an optical clock signal, eliminating the need for clock recovery circuitry on the receive end of the arrangement.

Abstract translation: 提出了一种用于高数据应用的光互连装置，通过利用脉冲幅度调制（PAM）技术来表示光域中的数据，消除了对广泛的串行/解序列化（SERDES）功能的需要，同时利用单独的信道 发送光时钟信号，消除了对该装置接收端的时钟恢复电路的需要。

公开(公告)号：US08363986B2

公开(公告)日：2013-01-29

申请号：US13029342

申请日：2011-02-17

Applicant: Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar ,  David Piede

Inventor： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar ,  David Piede

IPC: G02F1/035 ,  G02F1/01 ,  G02B6/26 ,  G02B6/42

CPC classification number: G02B6/12 ,  G02B6/26 ,  G02B26/00 ,  G02F1/025

Abstract: A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area.

Abstract translation: 具有控制器件的主体和栅极区域中的掺杂剂分布的高速硅基光学调制器降低了结构的串联电阻而不会引起实质的光功率损耗。 也就是说，在有源区域之外的区域中使用增加的掺杂剂值将允许降低串联电阻（从而增加器件的调制速度），而不会在信号损失中造成太大的惩罚。 调整栅极和体区内的掺杂剂分布，以显示接触区域中的高掺杂剂浓度与载流子集成窗口区域中的低掺杂剂浓度之间的中间值。

公开(公告)号：US08340529B2

公开(公告)日：2012-12-25

申请号：US12813562

申请日：2010-06-11

Applicant: Kalpendu Shastri ,  Bipin Dama ,  Vipulkumar Patel ,  Mark Webster

Inventor： Kalpendu Shastri ,  Bipin Dama ,  Vipulkumar Patel ,  Mark Webster

IPC: H04B10/12

CPC classification number: H04N7/22 ,  G09G5/006 ,  G09G2370/12 ,  G09G2370/18

Abstract: An HDMI interconnect arrangement is presented that performs a pulse-amplitude modulation (PAM) conversion of the TMDS audio/video signals in order to simultaneously transmit all three channels over a single optical fiber. The set of three audio/video TMDS channels is applied as an input to a PAM-8 optical modulator, which functions to encode the set of three channels onto an optically-modulated output signal. The modulated optical signal is thereafter coupled into an optical fiber within an active HDMI cable and transmitted to an HDMI receiver (sink). The TMDS CLK signal is not included in this conversion into the optical domain, but remains as a separate electrical signal to be transmitted along a copper signal path within the active HDMI cable.

Abstract translation: 呈现HDMI互连布置，其执行TMDS音频/视频信号的脉冲幅度调制（PAM）转换，以便通过单根光纤同时传输所有三个通道。 三组音频/视频TMDS通道的组合被用作PAM-8光调制器的输入，PAM-8光调制器用于将三个通道的组合编码到光调制的输出信号上。 调制的光信号此后耦合到有源HDMI电缆中的光纤中，并被传输到HDMI接收器（接收器）。 TMDS CLK信号不包含在该转换到光学域中，而是作为单独的电信号保持在有源HDMI电缆内的铜信号路径上传输。

公开(公告)号：US08320720B2

公开(公告)日：2012-11-27

申请号：US12856144

申请日：2010-08-13

Applicant: Mark Webster ,  Anujit Shastri ,  Kalpendu Shastri

Inventor： Mark Webster ,  Anujit Shastri ,  Kalpendu Shastri

IPC: G02B6/12

CPC classification number: G02F1/0121 ,  G02F1/2257 ,  G02F2001/0152 ,  H04B10/5051 ,  H04B10/5053 ,  H04B10/5055 ,  H04B10/516

Abstract: A silicon-based optical modulator is configured as a multi-segment device that utilizes a modified electrical data input signal format to address phase modulation nonlinearity and attenuation problems associated with free-carrier dispersion-based modulation. The modulator is formed to include M separate segments and a digital signal encoder is utilized to convert an N bit input data signal into a plurality of M drive signals for the M modulator segments, where M≧2N/2. The lengths of the modulator segments may also be adjusted to address the nonlinearity and attenuation problems. Additional phase adjustments may be utilized at the output of the modulator (beyond the combining waveguide).

Abstract translation: 硅基光调制器被配置为多段装置，其利用修改的电数据输入信号格式来解决与自由载波色散调制相关的相位调制非线性和衰减问题。 调制器被形成为包括M个单独的段，并且使用数字信号编码器将N位输入数据信号转换成用于M个调制器段的多个M个驱动信号，其中M≥N2N / 2。 调制器段的长度也可以被调整以解决非线性和衰减问题。 可以在调制器的输出（超过组合波导）的情况下使用附加的相位调整。

公开(公告)号：US20120280344A1

公开(公告)日：2012-11-08

申请号：US13463408

申请日：2012-05-03

Applicant: Kalpendu Shastri ,  Vipulkumar Patel ,  Mark Webster ,  Prakash Gothoskar ,  Ravinder Kachru ,  Soham Pathak ,  Rao V. Yelamarty ,  Thomas Daugherty ,  Bipin Dama ,  Kaushik Patel ,  Kishor Desai

Inventor： Kalpendu Shastri ,  Vipulkumar Patel ,  Mark Webster ,  Prakash Gothoskar ,  Ravinder Kachru ,  Soham Pathak ,  Rao V. Yelamarty ,  Thomas Daugherty ,  Bipin Dama ,  Kaushik Patel ,  Kishor Desai

IPC: H01L31/12

CPC classification number: H01L25/50 ,  G02B6/423 ,  G02B6/4244 ,  G02B6/4245 ,  G02B6/4249 ,  G02B6/4257 ,  G02B6/426 ,  H01L25/167 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014

Abstract: A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules.

Abstract translation: 光电子收发器组件过程的晶片级实现利用硅晶片作为光学参考平面和平台，同时为多个单独的收发器模块组装所有必需的光学和电子部件。 特别地，硅晶片被用作平台（插入器），用于多个收发器模块的所有部件安装或集成在该平台上，硅插入器的顶表面用作用于定义光信号的参考平面 分离的光学元件之间的路径。 实际上，通过使用单个硅晶片作为大量单独的收发器模块的平台，可以使用晶片尺度组装过程以及这些模块的光学对准和测试。

公开(公告)号：US20110044573A1

公开(公告)日：2011-02-24

申请号：US12856144

申请日：2010-08-13

Applicant: Mark Webster ,  Anujit Shastri ,  Kalpendu Shastri

Inventor： Mark Webster ,  Anujit Shastri ,  Kalpendu Shastri

IPC: G02F1/035

CPC classification number: G02F1/0121 ,  G02F1/2257 ,  G02F2001/0152 ,  H04B10/5051 ,  H04B10/5053 ,  H04B10/5055 ,  H04B10/516

Abstract: A silicon-based optical modulator is configured as a multi-segment device that utilizes a modified electrical data input signal format to address phase modulation nonlinearity and attenuation problems associated with free-carrier dispersion-based modulation. The modulator is formed to include M separate segments and a digital signal encoder is utilized to convert an N bit input data signal into a plurality of M drive signals for the M modulator segments, where M≧2N/2. The lengths of the modulator segments may also be adjusted to address the nonlinearity and attenuation problems. Additional phase adjustments may be utilized at the output of the modulator (beyond the combining waveguide).

Abstract translation: 硅基光调制器被配置为多段设备，其利用修改的电数据输入信号格式来解决与自由载波色散调制相关的相位调制非线性和衰减问题。 调制器被形成为包括M个单独的段，并且使用数字信号编码器将N位输入数据信号转换成用于M个调制器段的多个M个驱动信号，其中M≥N2N / 2。 调制器段的长度也可以被调整以解决非线性和衰减问题。 可以在调制器的输出（超过组合波导）的情况下使用附加的相位调整。

公开(公告)号：US20090135861A1

公开(公告)日：2009-05-28

申请号：US12291246

申请日：2008-11-06

Applicant: Mark Webster ,  David Piede ,  Prakash Gothoskar

Inventor： Mark Webster ,  David Piede ,  Prakash Gothoskar

IPC: H01S3/10

CPC classification number: H01S5/141 ,  H01S5/021 ,  H01S5/02248 ,  H01S5/02268 ,  H01S5/06256

Abstract: A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.

Abstract translation: 形成绝缘体上硅（SOI）的可调谐激光器以包括设置在形成于SOI衬底内的空腔内的增益介质（例如半导体光放大器）。 在SOI结构的表面上形成可调波长反射元件和相关的相位匹配元件，其中形成在表面SOI层中的光波导提供这些部件之间的连通。 可调波长元件被控制以调节光学波长。 单独的离散透镜元件可以用增益介质设置在空腔中，从而提供光信号到SOI波导的有效耦合。 或者，增益介质本身可以被形成为包括其端面上的点变换锥度，用于向相关联的光波导提供模式匹配的锥度。

公开(公告)号：US20070292075A1

公开(公告)日：2007-12-20

申请号：US11810591

申请日：2007-06-06

Applicant: Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Paulius Mindaugas Mosinskis ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Mark Webster

Inventor： Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Paulius Mindaugas Mosinskis ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Mark Webster

IPC: G02B6/12

CPC classification number: G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

Abstract: A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index

Abstract translation: 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一种可以容易地与硅基光学调制器结合。 对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率