公开(公告)号：US07982314B2

公开(公告)日：2011-07-19

申请号：US12805261

申请日：2010-07-21

申请人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

发明人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

IPC分类号： H01L23/48

CPC分类号： H01L23/5286 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01027

摘要： Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.

摘要翻译： 构成电路的电路元件和布线以及与这种电路电连接的第一电极设置在半导体衬底的一个主表面上。 除了第一电极的表面上的开口之外，在电路上形成有机绝缘膜。 第一和第二外部连接电极设置在有机绝缘膜上。 用于将第一和第二外部连接电极和第一电极电连接的至少一个导电层被放置在有机绝缘膜上。

公开(公告)号：US20100308458A1

公开(公告)日：2010-12-09

申请号：US12805261

申请日：2010-07-21

申请人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

发明人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

IPC分类号： H01L23/498

CPC分类号： H01L23/5286 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01027

摘要： Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.

摘要翻译： 构成电路的电路元件和布线以及与这种电路电连接的第一电极设置在半导体衬底的一个主表面上。 除了第一电极的表面上的开口之外，在电路上形成有机绝缘膜。 第一和第二外部连接电极设置在有机绝缘膜上。 用于将第一和第二外部连接电极和第一电极电连接的至少一个导电层被放置在有机绝缘膜上。

公开(公告)号：US07547971B2

公开(公告)日：2009-06-16

申请号：US11202352

申请日：2005-08-12

申请人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

发明人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

IPC分类号： H01L23/48

CPC分类号： H01L23/5286 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01027

摘要： Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.

摘要翻译： 构成电路的电路元件和布线以及与这种电路电连接的第一电极设置在半导体衬底的一个主表面上。 除了第一电极的表面上的开口之外，在电路上形成有机绝缘膜。 第一和第二外部连接电极设置在有机绝缘膜上。 用于将第一和第二外部连接电极和第一电极电连接的至少一个导电层被放置在有机绝缘膜上。

公开(公告)号：US07808107B2

公开(公告)日：2010-10-05

申请号：US12453383

申请日：2009-05-08

申请人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

发明人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

IPC分类号： H01L23/48

CPC分类号： H01L23/5286 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01027

摘要： Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.

公开(公告)号：US20090219069A1

公开(公告)日：2009-09-03

申请号：US12453383

申请日：2009-05-08

申请人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

发明人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

IPC分类号： H03L7/06 ,  H01L23/498 ,  G06F1/04

CPC分类号： H01L23/5286 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01027

摘要： Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.

公开(公告)号：US20060006480A1

公开(公告)日：2006-01-12

申请号：US11202352

申请日：2005-08-12

申请人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

发明人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

IPC分类号： H01L29/76

CPC分类号： H01L23/5286 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01027

摘要： Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.

公开(公告)号：US06963136B2

公开(公告)日：2005-11-08

申请号：US10362661

申请日：2001-12-17

申请人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

发明人： Masao Shinozaki ,  Kenji Nishimoto ,  Takashi Akioka ,  Yutaka Kohara ,  Sanae Asari ,  Shusaku Miyata ,  Shinji Nakazato

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/528 ,  H01L29/40

CPC分类号： H01L23/5286 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/01027

摘要： Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.

摘要翻译： 构成电路的电路元件和布线以及与这种电路电连接的第一电极设置在半导体衬底的一个主表面上。 除了第一电极的表面上的开口之外，在电路上形成有机绝缘膜。 第一和第二外部连接电极设置在有机绝缘膜上。 用于将第一和第二外部连接电极和第一电极电连接的至少一个导电层被放置在有机绝缘膜上。

公开(公告)号：US5638335A

公开(公告)日：1997-06-10

申请号：US649166

申请日：1996-05-17

申请人： Noboru Akiyama ,  Seigoh Yukutake ,  Sadayuki Ohkuma ,  Akihiko Emori ,  Takashi Akioka ,  Shuichi Miyaoka ,  Shinji Nakazato ,  Kinya Mitsumoto

发明人： Noboru Akiyama ,  Seigoh Yukutake ,  Sadayuki Ohkuma ,  Akihiko Emori ,  Takashi Akioka ,  Shuichi Miyaoka ,  Shinji Nakazato ,  Kinya Mitsumoto

IPC分类号： G11C11/41 ,  G11C5/00 ,  G06F13/00

CPC分类号： G11C5/06 ,  G11C7/062 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/1069 ,  G11C7/1078 ,  G11C7/1096

摘要： A memory device comprising a memory array having a plurality of bits, including parity bits, and comprising a plurality of memory blocks, and a bit structure changing section for changing the input/output bits of the memory array, wherein the number of the memory blocks are prescribed to be an integral multiple of three and the input/output bits of the plurality of memory blocks are even. Thereby, the bit structure of the semiconductor memory, having parity bits and which is capable of changing the input/output bits to a plurality of bit structures, can be changed while maintaining the bit structure of the memory blocks even and without increase in propagation delay time.

摘要翻译： 一种存储器件，包括具有多个位的存储器阵列，包括奇偶校验位，并且包括多个存储器块，以及位结构改变部分，用于改变存储器阵列的输入/输出位，其中存储器块的数量 被规定为3的整数倍，并且多个存储块的输入/输出位是偶数。 因此，可以改变具有奇偶校验位并且能够将输入/输出位改变为多个位结构的半导体存储器的位结构，同时保持存储器块的位结构并且不增加传播延迟 时间。

公开(公告)号：US5029323A

公开(公告)日：1991-07-02

申请号：US399952

申请日：1989-08-29

申请人： Shinji Nakazato ,  Hideaki Uchida ,  Nobuo Tanba ,  Nobuyuki Gotoo ,  Kazunori Onozawa ,  Atsushi Hiraishi

发明人： Shinji Nakazato ,  Hideaki Uchida ,  Nobuo Tanba ,  Nobuyuki Gotoo ,  Kazunori Onozawa ,  Atsushi Hiraishi

IPC分类号： H01L27/082 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/10 ,  H01L29/73 ,  H01L29/732

CPC分类号： H01L27/0623 ,  Y10S257/903

摘要： A semiconductor device facilitates keeping all parasitic resistance values between contact portion of a common source (V.sub.cc) line and intrinsic collector operation regions of respective transistors small enough so as not to exceed predetermined values and so as to be nearly identical. The parasitic resistance values are made small and nearly identical by disposing collector electrode connecting layers between base impurity introducing layers of respective transistors provided with predetermined intervals in a semiconductor substrate. Because of this arrangement to minimize and equalize resistances, the voltage drops generated by the parasitic resistances applied to respective transistors are suppressed so as to be lower than or not substantially exceed the operation threshold voltages of the parasitic transistors.

公开(公告)号：US4748487A

公开(公告)日：1988-05-31

申请号：US053479

申请日：1987-05-26

申请人： Hideaki Uchida ,  Kinya Mitsumoto ,  Yoshiaki Yazawa ,  Shinji Nakazato ,  Masanori Odaka

发明人： Hideaki Uchida ,  Kinya Mitsumoto ,  Yoshiaki Yazawa ,  Shinji Nakazato ,  Masanori Odaka

IPC分类号： H01L21/8238 ,  G11C11/34 ,  G11C11/419 ,  H01L21/8234 ,  H01L21/8244 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L27/11 ,  H01L27/02

CPC分类号： G11C11/419 ,  H01L27/11

摘要： A semiconductor memory device wherein the equivalent series resistances that are interposed in series in the pairs of complementary data lines D, D, are substantially the same as one another among the individual complementary data lines D, D. The equivalent series resistance is comprised of pull-up MISFET's and column switching MISFET's that exist between the power source V.sub.CC and the sense circuit. Parity is maintained for the pull-up MISFET's (Q.sub.p, Q.sub.p) and the column switching MISFET's (Q.sub.y, Q.sub.y) that exist on the pairs of complementary data lines D, D. To maintain this parity, the two MISFET's are formed to have the same shape. In addition, the arrangement of contacts to the transistors are set so that the directions in which the currents flow and lengths of current paths are also the same. In other words, contact portions between aluminum electrode and source and drain regions are formed at the same positions in the two MISFET's.

摘要翻译： 一种半导体存储器件，其中在互补数据线对D，＆amp; D和D中的串联插入的等效串联电阻在各个互补数据线D，＆amp; L和D之间彼此基本相同。等效串联电阻包括 上拉MISFET和列切换MISFET存在于电源VCC和感测电路之间。 维持上拉MISFET（Qp，Qp）和在互补数据线D和上拉和下降D上存在的列切换MISFET（Qy，Qy）的奇偶校验。为了保持这个奇偶校验，两个MISFET的形成是 相同的形状。 此外，设置与晶体管的接触的布置，使得电流流动的方向和电流路径的长度也相同。 换句话说，铝电极和源极和漏极区域之间的接触部分形成在两个MISFET的相同位置处。