公开(公告)号：US20150179467A1

公开(公告)日：2015-06-25

申请号：US14139582

申请日：2013-12-23

Applicant: Micron Technology, Inc. ,  Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/308

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Abstract translation: 一些实施例包括形成图案的方法。 在材料上形成第一个掩模。 第一掩模具有在其中延伸的特征并且限定第一图案。 第一种模式在特征分布上具有第一级的均匀性。 在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。 所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。 图案从第二个掩模转移到材料中。

公开(公告)号：US20150128992A1

公开(公告)日：2015-05-14

申请号：US14605218

申请日：2015-01-26

Applicant: Micron Technology, Inc.

Inventor： Joseph Neil Greeley ,  Dan Millward ,  Wayne Huang

IPC: B08B3/10 ,  H01L21/02 ,  B08B3/12

CPC classification number: B08B3/10 ,  B08B3/12 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67057

Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.

Abstract translation: 一些实施例包括从半导体衬底的过表面去除颗粒的方法。 液体可以流过表面和颗粒。 当液体流动时，可以使用电泳和/或电渗来增强颗粒从表面和液体中的转运。 在一些实施方案中，可以改变液体内的温度，pH和/或离子强度，以有助于从基底表面上除去颗粒。

公开(公告)号：US20150015860A1

公开(公告)日：2015-01-15

申请号：US14500625

申请日：2014-09-29

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Dan Millward ,  Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael D. Hyatt ,  Jianming Zhou

IPC: G03F7/20

CPC classification number: G03F7/70741 ,  G03F1/38 ,  G03F7/70433 ,  G03F7/70891

Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.

Abstract translation: 使用光掩模光刻地图案化可光成像材料的方法来减轻不对称透镜加热的方法包括当使用掩模版图案可光成像材料时，确定预期在透镜上将出现第一热点位置的位置。 然后制造掩模版以在掩模版的非印刷区域内包括非印刷特征，当使用掩模版对可光成像材料进行图案化时，其在透镜上产生额外的热点位置。 考虑了其他实施方式，包括可以独立于使用或制造方法的标线。

公开(公告)号：US20140349486A1

公开(公告)日：2014-11-27

申请号：US14455583

申请日：2014-08-08

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Dan Millward

IPC: H01L21/308 ,  C08J5/00

CPC classification number: H01L21/3083 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  C08J5/00 ,  C08J2353/00 ,  G03F7/0002 ,  H01L21/0337

Abstract: Some embodiments include methods of forming patterns utilizing copolymer. A main body of copolymer may be formed across a substrate, and self-assembly of the copolymer may be induced to form a pattern of structures across the substrate. A uniform thickness throughout the main body of the copolymer may be maintained during the inducement of the self-assembly. In some embodiments, the uniform thickness may be maintained through utilization of a wall surrounding the main body of copolymer to impede dispersal of the copolymer from the main body. In some embodiments, the uniform thickness may be maintained through utilization of a volume of copolymer in fluid communication with the main body of copolymer.

Abstract translation: 一些实施方案包括使用共聚物形成图案的方法。 共聚物的主体可以横跨基底形成，并且可以诱导共聚物的自组装以在基底上形成结构图案。 在自组装的诱导期间，可以保持整个共聚物主体的均匀厚度。 在一些实施方案中，通过利用围绕共聚物主体的壁阻止共聚物从主体的分散，可以维持均匀的厚度。 在一些实施方案中，可以通过使用与共聚物主体流体连通的一定体积的共聚物来维持均匀的厚度。

公开(公告)号：US10137481B2

公开(公告)日：2018-11-27

申请号：US14605218

申请日：2015-01-26

Applicant: Micron Technology, Inc.

Inventor： Joseph Neil Greeley ,  Dan Millward ,  Wayne Huang

IPC: B08B3/00 ,  B08B3/10 ,  H01L21/02 ,  H01L21/67 ,  B08B3/12

Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.

公开(公告)号：US09418848B2

公开(公告)日：2016-08-16

申请号：US14873089

申请日：2015-10-01

Applicant: Micron Technology, Inc. ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L21/027 ,  H01L21/308 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Abstract translation: 一些实施例包括形成图案的方法。 在材料上形成第一个掩模。 第一掩模具有在其中延伸的特征并且限定第一图案。 第一种模式在特征分布上具有第一级的均匀性。 在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模产生第二掩模。 所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。 图案从第二个掩模转移到材料中。

公开(公告)号：US20160027638A1

公开(公告)日：2016-01-28

申请号：US14873089

申请日：2015-10-01

Applicant: Micron Technology, Inc. ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/027 ,  H01L21/033

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

公开(公告)号：US20130270226A1

公开(公告)日：2013-10-17

申请号：US13912800

申请日：2013-06-07

Applicant: Micron Technology, Inc.

Inventor： Dan Millward

IPC: C23F1/02 ,  B05D3/00 ,  B05D5/00

CPC classification number: C23F1/02 ,  B05D3/00 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  Y10S438/947

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract translation: 嵌段共聚物可以自组装并用于本文所述的用于亚光刻图案化的方法中。 嵌段共聚物可以是二嵌段共聚物，三嵌段共聚物，多嵌段共聚物或其组合。 这样的方法可用于制造包括例如亚光刻导电线的器件。

公开(公告)号：US11139159B2

公开(公告)日：2021-10-05

申请号：US16165296

申请日：2018-10-19

Applicant: Micron Technology, Inc.

Inventor： Joseph Neil Greeley ,  Dan Millward ,  Wayne Huang

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/67 ,  B08B3/10 ,  B08B3/12

Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.

公开(公告)号：US08974678B2

公开(公告)日：2015-03-10

申请号：US13912800

申请日：2013-06-07

Applicant: Micron Technology, Inc.

Inventor： Dan Millward

IPC: H01L21/302 ,  B81C1/00 ,  C23F1/02 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/00 ,  H01L21/027 ,  H01L21/308 ,  B05D3/00 ,  B05D5/00

CPC classification number: C23F1/02 ,  B05D3/00 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  Y10S438/947

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract translation: 嵌段共聚物可以自组装并用于本文所述的用于亚光刻图案化的方法中。 嵌段共聚物可以是二嵌段共聚物，三嵌段共聚物，多嵌段共聚物或其组合。 这样的方法可用于制造包括例如亚光刻导电线的器件。