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公开(公告)号：US20210328094A1
公开(公告)日：2021-10-21
申请号：US17360350
申请日：2021-06-28
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
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公开(公告)号：US09385278B2
公开(公告)日：2016-07-05
申请号：US14617423
申请日：2015-02-09
Applicant: Micron Technology, Inc.
Inventor： Xiaolong Fang , Lifang Xu , Tingkai Li , Thomas Gehrke
CPC classification number: H01L33/32 , H01L21/78 , H01L22/10 , H01L22/32 , H01L22/34 , H01L23/544 , H01L33/0066 , H01L33/007 , H01L33/0095 , H01L33/48 , H01L2924/0002 , H01L2924/00
Abstract: Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.
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公开(公告)号：US20160155893A1
公开(公告)日：2016-06-02
申请号：US15016943
申请日：2016-02-05
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Cem Basceri , Vladimir Odnoblyudov , Casey Kurth , Thomas Gehrke
IPC: H01L33/00
CPC classification number: H01L33/0079 , H01L33/0062 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/02 , H01L33/16 , H01L33/46
Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
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4.发明申请公开(公告)号：US20160087144A1
公开(公告)日：2016-03-24
申请号：US14810092
申请日：2015-07-27
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
CPC classification number: H01L33/06 , C30B25/00 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/32
Abstract: Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.
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5.发明授权Devices, systems, and methods related to removing parasitic conduction in semiconductor devices 有权与去除半导体器件中的寄生导通相关的器件，系统和方法公开(公告)号：US09082748B2
公开(公告)日：2015-07-14
申请号：US13646307
申请日：2012-10-05
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov , Cem Basceri , Thomas Gehrke
IPC: H01L29/15 , H01L29/423 , H01L29/778 , H01L29/20
CPC classification number: H01L29/42316 , H01L29/0603 , H01L29/2003 , H01L29/205 , H01L29/4175 , H01L29/7786 , H01L29/7787 , H01L2224/16227
Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.
Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的方法包括从外延衬底形成半导体材料的堆叠，其中半导体材料堆叠限定异质结，并且其中半导体材料和外延衬底的堆叠进一步限定主体区域，其包括 邻近外延衬底的半导体堆叠部分。 该方法还包括将半导体材料堆叠附接到载体，其中载体被配置为提供到异质结的信号路径。 该方法还包括通过去除外延衬底来暴露体区。
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Patent Agency Ranking
公开(公告)号：US20240128396A1
公开(公告)日：2024-04-18
申请号：US18535966
申请日：2023-12-11
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/16 , H01L33/32
Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
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公开(公告)号：US20210184079A1
公开(公告)日：2021-06-17
申请号：US17175224
申请日：2021-02-12
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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公开(公告)号：US20170345972A1
公开(公告)日：2017-11-30
申请号：US15679958
申请日：2017-08-17
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/007 , H01L33/16 , H01L33/22 , H01L33/32
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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9.发明授权Devices, systems, and methods related to removing parasitic conduction in semiconductor devices 有权与去除半导体器件中的寄生导通相关的器件，系统和方法公开(公告)号：US09577058B2
公开(公告)日：2017-02-21
申请号：US14796974
申请日：2015-07-10
Applicant: Micron Technology, Inc.
Inventor： Martin F. Schubert , Vladimir Odnoblyudov , Cem Basceri , Thomas Gehrke
IPC: H01L29/15 , H01L29/423 , H01L29/205 , H01L29/06 , H01L29/778 , H01L29/20 , H01L29/417
CPC classification number: H01L29/42316 , H01L29/0603 , H01L29/2003 , H01L29/205 , H01L29/4175 , H01L29/7786 , H01L29/7787 , H01L2224/16227
Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.
Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的方法包括从外延衬底形成半导体材料的堆叠，其中半导体材料堆叠限定异质结，并且其中半导体材料堆叠和外延衬底进一步限定包括 邻近外延衬底的半导体堆叠部分。 该方法还包括将半导体材料堆叠附接到载体，其中载体被配置为提供到异质结的信号路径。 该方法还包括通过去除外延衬底来暴露体区。
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公开(公告)号：US08969899B2
公开(公告)日：2015-03-03
申请号：US13780136
申请日：2013-02-28
Applicant: Micron Technology, Inc.
Inventor： Charles M. Watkins , Kevin Tetz , Thomas Gehrke
CPC classification number: H01L33/44 , H01L33/507 , H01L2933/0041
Abstract: A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added.
Abstract translation: 公开了一种用于制造发光二极管（LED）的光转换结构的方法和系统。 该方法包括在LED芯片上形成透明的隔热盖。 该方法还包括将转换材料分配到盖上以在盖上形成转化涂层，并且将密封剂中的LED，硅树脂盖和转化膜封装。 可以添加额外的盖子和转换涂层。
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