摘要:
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要:
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要:
An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, and a positioning assembly aligns the substrate to the receiving plate. In some embodiments, the invention may include a stem interconnected to the substrate, a heat limiting member disposed about the stem, and a shroud extending about the stem.
摘要:
An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, which is supported by a stem having a heat limiting member and a shroud to protect the stem and a positioning assembly aligns the substrate to the receiving plate.
摘要:
A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber. In other preferred embodiments, the second temperature ranges from about 200.degree.-300.degree. C.
摘要:
A method comprises flowing process solution and electrode solution into a BPMED apparatus, applying a voltage such that the process solution is acidified and basified and dissolved CO2 is generated, flowing the process solution out of the apparatus, and desorbing CO2 out of the process solution. A method for desorbing CO2 from an ocean comprises flowing seawater and electrode solution into a BPMED apparatus, applying a voltage such that dissolved CO2 is generated, flowing the seawater out of the apparatus, and desorbing CO2 out of the seawater. A method for producing a desalted solution and CO2 gas comprises flowing process solution and electrode solution into a BPMED apparatus that includes one or more three-compartment cells, applying a voltage such that the process solution is acidified, basified, and desalted, flowing the process solution out of the apparatus, and desorbing CO2 out of the process solution.
摘要:
A method comprises flowing process solution and electrode solution into a BPMED apparatus, applying a voltage such that the process solution is acidified and basified and dissolved CO2 is generated, flowing the process solution out of the apparatus, and desorbing CO2 out of the process solution. A method for desorbing CO2 from an ocean comprises flowing seawater and electrode solution into a BPMED apparatus, applying a voltage such that dissolved CO2 is generated, flowing the seawater out of the apparatus, and desorbing CO2 out of the seawater. A method for producing a desalted solution and CO2 gas comprises flowing process solution and electrode solution into a BPMED apparatus that includes one or more three-compartment cells, applying a voltage such that the process solution is acidified, basified, and desalted, flowing the process solution out of the apparatus, and desorbing CO2 out of the process solution.
摘要:
In accordance with one aspect of the present disclosure, a solar photovoltaic device is disclosed. The semiconductor material of the solar photovoltaic device is a heterostructure of two different binary compounds of the same metal. One or both of the two different binary compounds of the same metal are doped so that they have a conduction band edge offset of greater than about 0.4 eV. The binary compound acting as the optical absorbing material of the solar photovoltaic device has a bandgap of about 1.0 eV to about 1.8 eV.
摘要:
A multi-electrode piezoelectric diaphragm structure includes a diaphragm, piezoelectric material located on the diaphragm, which is defined as having a first area, and a second area. The first area of the piezoelectric is poled in a first direction, and the second area of the piezoelectric is poled in a second direction. The poled first direction is in a Z-axis of the piezoelectric and the poled second direction is in a Radial axis of the piezoelectric. A first electrode is positioned in the first area, on the first surface, of the piezoelectric. A second electrode is positioned in the second area, on the first surface, of the piezoelectric. A third electrode is located on a second surface of the piezoelectric. The application of voltages to the first, second and third electrodes generates electric fields in the piezoelectric material resulting in actuation of the piezoelectric material, or the application of pressure or strain to the diaphragm generates electric potentials at the first, second and third electrodes.
摘要:
An electrode structure has a layer of at least two interdigitated materials, a first material being an electrically conductive material and a second material being an ionically conductive material, the materials residing co-planarly on a membrane in fluid form, at least one of the interdigitated materials forming a feature having an aspect ratio greater than one. A method of forming an electrode structure includes merging flows of an electrically conductive material and a second material in a first direction into a first combined flow, dividing the first combined flow in a second direction to produce at least two separate flows, each separate flow including flows of the electrically conductive material and the second material, merging the two separate flows into a second combined flow, repeating the merging and dividing flow as desired to produce a final combined flow, and depositing the final combined flow as an interdigitated structure in fluid form onto a substrate such that at least one of the materials forms a feature in the structure having an aspect ratio greater than one.