公开(公告)号：US08816373B2

公开(公告)日：2014-08-26

申请号：US13632846

申请日：2012-10-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Kai Gehrke ,  Korbinian Perzlmaier ,  Richard Floeter ,  Christian Schmid

IPC: H01L33/46

CPC classification number: H01L33/60 ,  H01L33/405

Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence for generating an electromagnetic radiation, and also a silver mirror. The silver mirror is arranged at the semiconductor layer sequence. Oxygen is admixed with the silver of the silver mirror. A proportion by weight of the oxygen in the silver mirror is preferably at least 10−5 and furthermore preferably at most 10%.

Abstract translation: 在至少一个实施例中，光电半导体芯片包括用于产生电磁辐射的半导体层序列，以及银镜。 银镜配置在半导体层序列。 氧气与银色镜子的银混合。 银镜中氧的比例优选为10-5以上，进一步优选为10％以下。

公开(公告)号：US20180190874A1

公开(公告)日：2018-07-05

申请号：US15737724

申请日：2016-06-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Simeon Katz ,  Kai Gehrke ,  Massimo Drago ,  Joachim Hertkorn

IPC: H01L33/42 ,  H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  H01L31/0304 ,  H01L31/0224

CPC classification number: H01L33/42 ,  H01L31/022475 ,  H01L31/03044 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.

公开(公告)号：US09196789B2

公开(公告)日：2015-11-24

申请号：US14418913

申请日：2013-07-24

Applicant: OSRAM Opto Semiconductors GmbH ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： Matthias Peter ,  Simeon Katz ,  Jürgen Off ,  Korbinian Perzlmaier ,  Kai Gehrke ,  Rolf Aidam ,  Jürgen Däubler ,  Thorsten Passow

IPC: H01L33/32 ,  H01L33/10 ,  H01L33/40 ,  H01L33/00 ,  H01L33/42 ,  H01L31/02 ,  H01L33/30 ,  H01L33/36 ,  H01L33/46 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/054 ,  H01L31/056

CPC classification number: H01L33/10 ,  H01L31/02002 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/0236 ,  H01L31/0304 ,  H01L31/054 ,  H01L31/056 ,  H01L31/184 ,  H01L33/0008 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32 ,  H01L33/325 ,  H01L33/36 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  Y02E10/52 ,  H01L2924/00

Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.

Abstract translation: 公开了一种用于形成用于光电子部件的反射接触层系统的反射接触层系统和方法。 在一个实施例中，该部件包括布置在第一p掺杂氮化物半导体层和透明导电层之间的第一p掺杂氮化物化合物半导体层，透明导电氧化物层，次要层和第二p掺杂氮化物化合物半导体层 氧化物层，其中第二p掺杂氮化物化合物半导体层在面向透明导电氧化物层的界面处具有N面域，并且其中界面处的N面域具有至少95％的面积比。

公开(公告)号：US10566501B2

公开(公告)日：2020-02-18

申请号：US15737724

申请日：2016-06-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Simeon Katz ,  Kai Gehrke ,  Massimo Drago ,  Joachim Hertkorn

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/12 ,  H01L31/0224 ,  H01L31/0304 ,  H01L33/32

Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.

公开(公告)号：US10043958B2

公开(公告)日：2018-08-07

申请号：US15402689

申请日：2017-01-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Kai Gehrke ,  Robert Walter ,  Karl Engl ,  Guido Weiss ,  Markus Maute ,  Stefanie Rammelsberger

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/56

CPC classification number: H01L33/60 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

公开(公告)号：US20170148962A1

公开(公告)日：2017-05-25

申请号：US15402689

申请日：2017-01-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Kai Gehrke ,  Robert Walter ,  Karl Engl ,  Guido Weiss ,  Markus Maute ,  Stefanie Rammelsberger

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/42 ,  H01L33/56 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/60 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

公开(公告)号：US10008649B2

公开(公告)日：2018-06-26

申请号：US15402689

申请日：2017-01-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Kai Gehrke ,  Robert Walter ,  Karl Engl ,  Guido Weiss ,  Markus Maute ,  Stefanie Rammelsberger

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/56

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

公开(公告)号：US20150270437A1

公开(公告)日：2015-09-24

申请号：US14418913

申请日：2013-07-24

Applicant: OSRAM Opto Semiconductors GmbH ,  Fraunhofer-Gesellschaft zur Förderung der angewan- dten Forschung e.V.

Inventor： Matthias Peter ,  Simeon Katz ,  Jürgen Off ,  Korbinian Perzlmaier ,  Kai Gehrke ,  Rolf Aidam ,  Jürgen Däubler ,  Thorsten Passow

IPC: H01L33/10 ,  H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/10 ,  H01L31/02002 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/0236 ,  H01L31/0304 ,  H01L31/054 ,  H01L31/056 ,  H01L31/184 ,  H01L33/0008 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32 ,  H01L33/325 ,  H01L33/36 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  Y02E10/52 ,  H01L2924/00

Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.

Abstract translation: 公开了一种用于形成用于光电子部件的反射接触层系统的反射接触层系统和方法。 在一个实施例中，该部件包括布置在第一p掺杂氮化物半导体层和透明导电层之间的第一p掺杂氮化物化合物半导体层，透明导电氧化物层，次要层和第二p掺杂氮化物化合物半导体层 氧化物层，其中第二p掺杂氮化物化合物半导体层在面向透明导电氧化物层的界面处具有N面域，并且其中界面处的N面域具有至少95％的面积比。