摘要:
Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.
摘要翻译:本发明的实施例一般涉及在半导体衬底上制造器件的方法。 更具体地,本发明的实施例涉及图案化磁性材料的方法。 本文所述的某些实施方案使用含有氢气或含氢气体的还原化学物质,其具有任选的稀释气体,温度范围为20-300摄氏度,衬底偏压小于1,000直流电压,以减少溅射和再沉积的量。 可与本文所述实施方案一起使用的示例性含氢气体包括NH 3,H 2,CH 4,C 2 H 4,SiH 4和H 2 S. 已经发现,使用包含氢的无氧化剂气体混合物构图磁隧道结保持了磁性隧道结的完整性,而不会产生有害的导电残留物。
摘要:
Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.
摘要翻译:本发明的实施例一般涉及在半导体衬底上制造器件的方法。 更具体地,本发明的实施例涉及图案化磁性材料的方法。 本文所述的某些实施方案使用含有氢气或含氢气体的还原化学物质,其具有任选的稀释气体,温度范围为20-300摄氏度,衬底偏压小于1,000直流电压,以减少溅射和再沉积的量。 可与本文所述实施方案一起使用的示例性含氢气体包括NH 3,H 2,CH 4,C 2 H 4,SiH 4和H 2 S. 已经发现,使用包含氢的无氧化剂气体混合物构图磁隧道结保持了磁性隧道结的完整性,而不会产生有害的导电残留物。
摘要:
The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z(x+y−+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 Å and 4 Å. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2.times.2.92 Å) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2.times.3.27 Å). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.
摘要翻译:本发明涉及一种基于氧化钛的聚合物组合物。 本发明的组合物包含凝胶或溶胶形式的TiO x(OH)y(H 2 O)z(x + y + z = 3)氧化钛基聚合物。 具有一维(1D)结构的所述聚合物由具有介于3.5和4之间的从所述纤维之间的间隔推断的周期性的同心缠绕的纤维制成。 每个纤维包括TiO 6八面体,并且每个TiO 6八面体共享两个相对的边缘,其中两个相邻的八面体(2. 2.92埃)以形成沿着纤维轴发展的无限链。 根据本发明,作为共享边缘的结果,两个相邻的链形成双线(2/3.27埃)。 本发明的聚合物适合用作光伏电池中的光敏元件,例如用于窗户的防晒剂。
摘要:
The instrumented rolling bearing device comprises a rotating ring 5, a non-rotating ring 4, and a detection assembly 3 equipped with a sensor unit 11 comprising an external annular portion 11b and a means of axially retaining the sensor unit on the non-rotating ring positioned on the external annular portion 11b. The outside diameter of the external annular portion 11b is smaller than the inside diameter of a frontal radial surface 4b of the non-rotating ring.
摘要:
The invention relates to a process for making a gate for a CMOS transistor structure, made from a stack realized on a face in a semi-conducting material of a substrate, said stack comprising a gate isolation layer, a gate material layer and a gate mask in sequence, the process comprising the following steps: a) anisotropic etching of the top part of the gate material layer not masked by the gate mask, this etching step leaving the bottom part of the gate material layer and leading to the formation of a deposit composed of etching products on the etching sides resulting from the anisotropic etching, b) treatment of the deposit composed of etching products, to make a protection layer reinforced against subsequent etching of the gate material, c) etching of the bottom part of the gate material layer as far as the gate isolation layer, this etching comprising isotropic etching of the gate material layer to make the gate shorter at the bottom than at the top.
摘要:
The process for etching a polycrystalline Si1−xGex layer or a stack includes a polycrystalline Si1−xGex layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl2) and of either nitrogen (N2) or ammonia (NH3) or of a nitrogen/ammonia mixture.
摘要:
The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z (x+y+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 Å and 4 Å. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2×2.92 Å) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2×3.27 Å). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.
摘要翻译:本发明涉及一种基于氧化钛的聚合物组合物。 本发明的组合物包含凝胶或溶胶形式的TiO x(OH)y(H 2 O)z(x + y + z = 3)氧化钛基聚合物。 具有一维(1D)结构的所述聚合物由具有介于3.5和4之间的从所述纤维之间的间隔推断的周期性的同心缠绕的纤维制成。 每个纤维包括TiO 6八面体,并且每个TiO 6八面体共享两个相对的边缘和两个相邻的八面体(2x2.92埃),以便形成沿着纤维轴发展的无限链。 根据本发明,由于共享边缘(2x3.27),两个相邻的链形成双线。 本发明的聚合物适合用作光伏电池中的光敏元件,例如用于窗户的防晒剂。
摘要:
The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z(x+y+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 Å and 4 Å. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2×2.92 Å) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2×3.27 Å). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.
摘要翻译:本发明涉及一种基于氧化钛的聚合物组合物。 本发明的组合物包含(x + y +)(x + y + z) z = 3)凝胶或溶胶形式的氧化钛基聚合物。 具有一维(1D)结构的所述聚合物由具有介于3.5和4之间的从所述纤维之间的间隔推断的周期性的同心缠绕的纤维制成。 每个纤维包括TiO 6八面体,并且每个TiO 2六面体共享两个相邻的边缘和两个相邻的八面体(2x2.92),以形成沿轴线发展的无限链 的纤维。 根据本发明,由于共享边缘(2x3.27),两个相邻的链形成双线。 本发明的聚合物适合用作光伏电池中的光敏元件,例如用于窗户的防晒剂。
摘要:
A process for etching a PPMS layer that increases the etch selectivity of PPMS relative to PPMSO from an initial low etch selectivity to a higher etch selectivity at a later stage of the etching process. In some embodiments, the etch selectivity used during a first etching step of the process is less than 4:1 and the etch selectivity used during a second etching step, subsequent to the first step, is greater than 5:1. In some other embodiments, the etch selectivity of the first step is between 2-3:1 and the etch selectivity of the second step is greater than 8:1. Optionally, in still other embodiments a third etching step, performed between the first and second etching steps may be employed where the etch selectivity is between 3-8:1.
摘要:
The invention relates to the use of a ceramic of formula Ba2(1−x)M2xIn2(1−y)M′2yO4+δ(OH)δ′ where M represents at least one metal cation with an oxidation number II or III or a combination thereof, M′ represents at least one metal cation with an oxidation number III, IV, V or VI or a combination thereof, 0