Titanium oxide-based sol-gel polymer
    2.
    发明授权
    Titanium oxide-based sol-gel polymer 有权
    氧化钛基溶胶 - 凝胶聚合物

    公开(公告)号:US07723610B2

    公开(公告)日:2010-05-25

    申请号:US12406760

    申请日:2009-03-18

    摘要: The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z(x+y−+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 Å and 4 Å. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2.times.2.92 Å) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2.times.3.27 Å). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.

    摘要翻译: 本发明涉及一种基于氧化钛的聚合物组合物。 本发明的组合物包含凝胶或溶胶形式的TiO x(OH)y(H 2 O)z(x + y + z = 3)氧化钛基聚合物。 具有一维(1D)结构的所述聚合物由具有介于3.5和4之间的从所述纤维之间的间隔推断的周期性的同心缠绕的纤维制成。 每个纤维包括TiO 6八面体,并且每个TiO 6八面体共享两个相对的边缘,其中两个相邻的八面体(2. 2.92埃)以形成沿着纤维轴发展的无限链。 根据本发明,作为共享边缘的结果,两个相邻的链形成双线(2/3.27埃)。 本发明的聚合物适合用作光伏电池中的光敏元件,例如用于窗户的防晒剂。

    TITANIUM OXIDE-BASED SOL-GEL POLYMER
    3.
    发明申请
    TITANIUM OXIDE-BASED SOL-GEL POLYMER 有权
    氧化钛基溶胶凝胶聚合物

    公开(公告)号:US20090173383A1

    公开(公告)日:2009-07-09

    申请号:US12406760

    申请日:2009-03-18

    IPC分类号: H01L31/0216 H01B1/02

    摘要: The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z(x+y−+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 Å and 4 Å. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2.times.292 Å) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2.times.3.27 Å). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.

    摘要翻译: 本发明涉及一种基于氧化钛的聚合物组合物。 本发明的组合物包含凝胶或溶胶形式的TiO x(OH)y(H 2 O)z(x + y + z = 3)氧化钛基聚合物。 具有一维(1D)结构的所述聚合物由具有介于3.5和4之间的从所述纤维之间的间隔推断的周期性的同心缠绕的纤维制成。 每个纤维包括TiO 6八面体,并且每个TiO 6八面体共享两个相对的边缘和两个相邻的八面体(2.282),以形成沿着纤维轴发展的无限链。 根据本发明,作为共享边缘的结果,两个相邻的链形成双线(2/3.27埃)。 本发明的聚合物适合用作光伏电池中的光敏元件,例如用于窗户的防晒剂。

    Titanium oxide-based sol-gel polymer
    4.
    发明授权
    Titanium oxide-based sol-gel polymer 有权
    氧化钛基溶胶 - 凝胶聚合物

    公开(公告)号:US07524482B2

    公开(公告)日:2009-04-28

    申请号:US10502399

    申请日:2003-01-14

    IPC分类号: C01G25/02 C01G27/02 C04B35/00

    摘要: The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z (x+y+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 Å and 4 Å. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2×2.92 Å) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2×3.27 Å). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.

    摘要翻译: 本发明涉及一种基于氧化钛的聚合物组合物。 本发明的组合物包含凝胶或溶胶形式的TiO x(OH)y(H 2 O)z(x + y + z = 3)氧化钛基聚合物。 具有一维(1D)结构的所述聚合物由具有介于3.5和4之间的从所述纤维之间的间隔推断的周期性的同心缠绕的纤维制成。 每个纤维包括TiO 6八面体,并且每个TiO 6八面体共享两个相对的边缘和两个相邻的八面体(2x2.92埃),以便形成沿着纤维轴发展的无限链。 根据本发明,由于共享边缘(2x3.27),两个相邻的链形成双线。 本发明的聚合物适合用作光伏电池中的光敏元件,例如用于窗户的防晒剂。

    Titanium oxide-based sol-gel polymer
    5.
    发明申请
    Titanium oxide-based sol-gel polymer 有权
    氧化钛基溶胶 - 凝胶聚合物

    公开(公告)号:US20050163702A1

    公开(公告)日:2005-07-28

    申请号:US10502399

    申请日:2003-01-14

    摘要: The invention relates to a titanium oxide-based polymer composition. The inventive composition comprises a TiOx(OH)y(H2O)z(x+y+z=3) titanium oxide-based polymer in the form of a gel or sol. Said polymer, which has a one-dimensional (1D) structure, is made from concentrically-wound fibers having a periodicity which is deduced from the spacing between said fibers, of between 3.5 Å and 4 Å. Each fiber comprises TiO6octahedrons and each TiO6octahedron shares two opposite edges with two adjacent octahedrons (2×2.92 Å) in order to form infinite chains which develop along the axis of a fiber. According to the invention, two adjacent chains form double lines as a result of the shared edges (2×3.27 Å). The inventive polymer is suitable for use as a photosensitive element in a photovoltaic cell, such as a sunscreen for a window.

    摘要翻译: 本发明涉及一种基于氧化钛的聚合物组合物。 本发明的组合物包含(x + y +)(x + y + z) z = 3)凝胶或溶胶形式的氧化钛基聚合物。 具有一维(1D)结构的所述聚合物由具有介于3.5和4之间的从所述纤维之间的间隔推断的周期性的同心缠绕的纤维制成。 每个纤维包括TiO 6八面体,并且每个TiO 2六面体共享两个相邻的边缘和两个相邻的八面体(2x2.92),以形成沿轴线发展的无限链 的纤维。 根据本发明,由于共享边缘(2x3.27),两个相邻的链形成双线。 本发明的聚合物适合用作光伏电池中的光敏元件,例如用于窗户的防晒剂。

    Instrumented Roller Bearing Device
    6.
    发明申请
    Instrumented Roller Bearing Device 审中-公开
    仪表滚子轴承装置

    公开(公告)号:US20100098362A1

    公开(公告)日:2010-04-22

    申请号:US12226467

    申请日:2007-02-27

    IPC分类号: F16C32/00

    摘要: The instrumented rolling bearing device comprises a rotating ring 5, a non-rotating ring 4, and a detection assembly 3 equipped with a sensor unit 11 comprising an external annular portion 11b and a means of axially retaining the sensor unit on the non-rotating ring positioned on the external annular portion 11b. The outside diameter of the external annular portion 11b is smaller than the inside diameter of a frontal radial surface 4b of the non-rotating ring.

    摘要翻译: 装配的滚动轴承装置包括旋转环5,非旋转环4和装备有包括外部环形部分11b的传感器单元11的检测组件3和将传感器单元轴向保持在非旋转环上的装置 定位在外部环形部分11b上。 外环形部分11b的外径小于非旋转环的前向径向表面4b的内径。

    Process for making a gate for a short channel CMOS transistor structure
    7.
    发明授权
    Process for making a gate for a short channel CMOS transistor structure 有权
    用于制造短沟道CMOS晶体管结构的栅极的工艺

    公开(公告)号:US06818488B2

    公开(公告)日:2004-11-16

    申请号:US10332451

    申请日:2003-09-08

    IPC分类号: H01L21338

    摘要: The invention relates to a process for making a gate for a CMOS transistor structure, made from a stack realized on a face in a semi-conducting material of a substrate, said stack comprising a gate isolation layer, a gate material layer and a gate mask in sequence, the process comprising the following steps: a) anisotropic etching of the top part of the gate material layer not masked by the gate mask, this etching step leaving the bottom part of the gate material layer and leading to the formation of a deposit composed of etching products on the etching sides resulting from the anisotropic etching, b) treatment of the deposit composed of etching products, to make a protection layer reinforced against subsequent etching of the gate material, c) etching of the bottom part of the gate material layer as far as the gate isolation layer, this etching comprising isotropic etching of the gate material layer to make the gate shorter at the bottom than at the top.

    摘要翻译: 本发明涉及一种用于制造CMOS晶体管结构的栅极的方法,该栅极由在衬底的半导体材料的表面上实现的叠层制成,所述堆叠包括栅极隔离层,栅极材料层和栅极掩模 顺序地,该方法包括以下步骤:a)不被栅极掩模掩蔽的栅极材料层的顶部的各向异性蚀刻,该蚀刻步骤离开栅极材料层的底部并导致形成沉积物 由各向异性腐蚀产生的蚀刻侧面上的蚀刻产物组成,b)处理由蚀刻产物构成的沉积物,以形成对栅极材料的后续蚀刻加强的保护层,c)蚀刻栅极材料的底部 层,直到栅极隔离层,该蚀刻包括栅极材料层的各向同性蚀刻,以使栅极在底部比在顶部更短。

    Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics
    8.
    发明授权
    Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics 失效
    用于蚀刻多晶Si(1-x)Ge(x)层或多晶Si(1-x)Ge(x)层和多晶Si层的堆叠的方法及其在微电子学中的应用

    公开(公告)号:US06271144B1

    公开(公告)日:2001-08-07

    申请号:US09103121

    申请日:1998-06-23

    IPC分类号: H01L21302

    CPC分类号: H01L21/28282 H01L21/32137

    摘要: The process for etching a polycrystalline Si1−xGex layer or a stack includes a polycrystalline Si1−xGex layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl2) and of either nitrogen (N2) or ammonia (NH3) or of a nitrogen/ammonia mixture.

    摘要翻译: 用于蚀刻多晶Si1-xGex层或堆叠的方法包括沉积在基板上并且在其表面上包括无机材料掩模的多晶Si1-xGex层和多晶Si层,其包括主蚀刻步骤,其中 使用所述掩模,通过由氯(Cl 2)和氮(N 2)或氨(NH 3)或由氮(N 2)或氨(NH 3)组成的气体混合物的高密度气体等离子体对所述层或所述堆叠进行各向异性蚀刻 氮/氨混合物。

    Process for depositing and developing a plasma polymerized organosilicon photoresist film
    9.
    发明授权
    Process for depositing and developing a plasma polymerized organosilicon photoresist film 失效
    用于沉积和显影等离子体聚合的有机硅光致抗蚀剂膜的方法

    公开(公告)号:US06589715B2

    公开(公告)日:2003-07-08

    申请号:US09810369

    申请日:2001-03-15

    IPC分类号: G03F736

    摘要: A process for etching a PPMS layer that increases the etch selectivity of PPMS relative to PPMSO from an initial low etch selectivity to a higher etch selectivity at a later stage of the etching process. In some embodiments, the etch selectivity used during a first etching step of the process is less than 4:1 and the etch selectivity used during a second etching step, subsequent to the first step, is greater than 5:1. In some other embodiments, the etch selectivity of the first step is between 2-3:1 and the etch selectivity of the second step is greater than 8:1. Optionally, in still other embodiments a third etching step, performed between the first and second etching steps may be employed where the etch selectivity is between 3-8:1.

    摘要翻译: 用于蚀刻PPMS层的方法,其将PPMS相对于PPMSO的蚀刻选择性从初始低蚀刻选择性增加到在蚀刻工艺的稍后阶段的较高蚀刻选择性。 在一些实施方案中,在该方法的第一蚀刻步骤期间使用的蚀刻选择性小于4:1,并且在第一步骤之后的第二蚀刻步骤期间使用的蚀刻选择性大于5:1。 在一些其它实施方案中,第一步骤的蚀刻选择性在2-3:1之间,并且第二步骤的蚀刻选择性大于8:1。 可选地,在其它实施例中,可以采用在第一和第二蚀刻步骤之间执行的第三蚀刻步骤,其中蚀刻选择性在3-8:1之间。

    METHOD OF PATTERNING OF MAGNETIC TUNNEL JUNCTIONS
    10.
    发明申请
    METHOD OF PATTERNING OF MAGNETIC TUNNEL JUNCTIONS 失效
    电磁隧道结构的方法

    公开(公告)号:US20120276657A1

    公开(公告)日:2012-11-01

    申请号:US13095736

    申请日:2011-04-27

    IPC分类号: H01L21/8246

    CPC分类号: H01L43/12

    摘要: Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.

    摘要翻译: 本发明的实施例一般涉及在半导体衬底上制造器件的方法。 更具体地,本发明的实施例涉及图案化磁性材料的方法。 本文所述的某些实施方案使用含有氢气或含氢气体的还原化学物质,其具有任选的稀释气体,温度范围为20-300摄氏度,衬底偏压小于1,000直流电压,以减少溅射和再沉积的量。 可与本文所述实施方案一起使用的示例性含氢气体包括NH 3,H 2,CH 4,C 2 H 4,SiH 4和H 2 S. 已经发现,使用包含氢的无氧化剂气体混合物构图磁隧道结保持了磁性隧道结的完整性,而不会产生有害的导电残留物。