摘要:
A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.
摘要:
A planar light source apparatus includes a plurality of elongated lighting elements disposed in a common plane, and a plurality of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The lighting elements are equidistantly spaced from each other. The lighting elements face a same direction. The mirror reflectors frame the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the common plane. A distance between one of the reflectors and its nearest lighting element is maximum of half the distance between two adjacent lighting elements.
摘要:
A photo-catalyst air cleaner includes at least one light source, a photo-catalyst filter and a first water supply. The photo-catalyst filter includes a hydrophilic substrate with a layer formed on a surface of the substrate exposed to light from the at least one light source. The water supply is configured for supplying water for absorption by the substrate, thereby humidifying surfaces of the photo-catalyst filter.
摘要:
A thermoelectric cooler includes a plurality of P-type semiconductor elements, a plurality of N-type semiconductor elements, a plurality of connection circuits, a cold end and a hot end. The P-type semiconductor elements are electrically connected to the N-type semiconductor elements by the connection circuits. The P-type semiconductor elements, the N-type semiconductor elements and the connection circuits are sandwiched between the cold end and the hot end providing thermal connection therebetween. The cold end includes a first metal base and a first insulated metal oxide film formed on a side of the first metal base adjacent to the P-type semiconductor elements, the N-type semiconductor elements and the connection circuits.
摘要:
A light emitting diode includes a reflective cup, an LED chip, and many electrodes, a first light scattering layer, and a phosphor layer. The reflective cup includes a bottom and a sidewall extending from the bottom. The LED chip is received in the reflective cup and mounted on the bottom thereof for emitting first light of a first wavelength. The electrodes each has a first end electrically connected to the LED chip and an opposite second end exposed at an outer surface of the reflective cup. The first light scattering layer formed in the reflective cup on the bottom thereof and covering the LED chip, which has a concave surface at an opposite side thereof to the LED chip. The phosphor layer formed on the concave surface of the light scattering layer for converting part of the first light into second light of a second wavelength.
摘要:
A light emitting diode illuminating apparatus for emitting colorful light includes a substrate, a first lighting element, a second lighting element, a third lighting element. The first, second and third lighting elements are juxtaposed at the substrate. The first lighting element includes a first LED chip, and a first filling layer encapsulating it. The first filling layer includes red phosphor generally evenly doped therein. The second lighting element includes a second LED chip and a second filling layer encapsulating it. The third lighting element includes a third LED chip and a third filling layer encapsulating it. All of the first, the second and the third LED chips are the same kind of LED chip selected from the group consisting of GaN LED chips, AlGaN LED chips and InGaN LED chips. Light emitting from the filling layers are capable of mixing to produce light of a uniform color.
摘要:
A flip-chip light emitting diode includes a substrate, an LED chip and a plurality of conductive bumps. The substrate has at least one recess defined in the surface of the substrate, and at least a part of the conductive bumps is embedded the at least one recess. The LED chip is mounted on a surface of the substrate by a flip-chip mounting process. The conductive bumps are sandwiched between the substrate and the LED chip to bond and electrically connect the LED chip to the substrate.
摘要:
An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode electrically is connected with the first-type semiconductor layer. The first electrode includes a first contact pad and a current induced electrode spaced apart and insulated from each other. The second electrode has an opposite polarity with respect to the first electrode. The second electrode includes a transparent conductive layer formed on and electrically connected with the second-type semiconductor layer and a metallic conductive layer formed on the transparent conductive layer and in electrical contact therewith.
摘要:
A solid-state illuminating apparatus for emitting white light with high CRI includes a substrate, a first lighting element, a second lighting element, a third lighting element. The first, second and third lighting elements are respectively placed in a first, a second, and a third receiving groove. The first lighting element includes a first solid-state lighting chip and a first filling layer encapsulating the first solid-state lighting chip therein. Similar to the first lighting element, the second lighting element includes a second solid-state lighting chip and a second filling layer, and the third lighting element includes a third solid-state lighting chip and a third filling layer. The first, second and third solid-state lighting chip are solid-state lighting chip with the same color light. At least two of the first, second, and third filling layer include two different phosphor materials respectively doped therein.
摘要:
An LED light bar comprises a housing, a circuit board with a plurality of separated portions located on the housing, a plurality of LED package devices disposed on the circuit board and electrically connecting to the circuit board, and a plurality of power dispensers respectively electrically connecting to the separated portions of the circuit board. The plurality of LED package devices is divided into a plurality of groups respectively on the plurality of separated portions of the circuit board, wherein the plurality of LED package devices of each of the groups forms a closed loop. Each separated portion of the circuit board includes a metal layer on the housing, an insulating layer on the metal layer and a circuit layer on the insulating layer. Each group of the LED package devices is on a corresponding circuit layer.