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    SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190214555A1

    公开(公告)日：2019-07-11

    申请号：US16208544

    申请日：2018-12-03

    Applicant: ROHM CO., LTD.

    Inventor： Isamu NISHIMURA ,  Hirofumi TAKEDA

    IPC: H01L43/14 ,  H01L43/06 ,  H01L43/04

    CPC classification number: H01L43/14 ,  H01L43/04 ,  H01L43/065

    Abstract: A semiconductor device includes a substrate having a front surface and a mounting surface that are separate from each other in a thickness direction. The substrate is formed with a through-hole that penetrates through in the thickness direction. A semiconductor element is mounted on the front surface of the substrate, and a front-surface wire line is formed on the front surface of the substrate to be electrically connected to the semiconductor element. A column is provided inside the through-hole, and is electrically connected to the front-surface wiring line. An electrode pad is provided on the mounting surface of the substrate, and is electrically connected to the column. A resin-layer through portion is also provided inside the through-hole. The semiconductor element is covered with a sealing resin. The resin-layer through portion has an orthogonal surface in contact with the column. The orthogonal surface is orthogonal to the mounting surface.

    SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT PRODUCTION METHOD
    4.
    发明申请
    SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT PRODUCTION METHOD 有权

    公开(公告)号：US20220352105A1

    公开(公告)日：2022-11-03

    申请号：US17765265

    申请日：2020-09-29

    Applicant: ROHM CO., LTD.

    Inventor： Isamu NISHIMURA ,  Hiroyuki SHINKAI ,  Yoshihisa TAKADA ,  Hideaki YANAGIDA ,  Hirofumi TAKEDA

    IPC: H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L25/16

    Abstract: A semiconductor device includes a substrate, a wire portion, a bonding portion, a semiconductor element, and an encapsulation resin. The substrate includes substrate main and back surfaces facing in opposite directions. The wire portion includes a conductive layer formed on the substrate main surface. The bonding portion includes a first plated layer formed on an upper surface of the wire portion and a first solder layer formed on an upper surface of the first plated layer. The semiconductor element includes an element main surface facing the substrate main surface, an element electrode formed on the element main surface, and a second plated layer formed on a lower surface of the element electrode and bonded to the first solder layer. The encapsulation resin covers the semiconductor element. The bonding portion is larger than the element electrode as viewed in a thickness-wise direction that is perpendicular to the substrate main surface.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20170054071A1

    公开(公告)日：2017-02-23

    申请号：US15233657

    申请日：2016-08-10

    Applicant: ROHM CO., LTD.

    Inventor： Hirofumi TAKEDA ,  Satoshi KIMOTO

    IPC: H01L43/06 ,  H01L43/14 ,  H01L21/768 ,  H01L29/04

    Abstract: A semiconductor device includes a semiconductor element, a semiconductor substrate on which the semiconductor element is mounted, a conductive layer formed on the substrate, and a sealing resin covering the semiconductor element. The substrate is formed with a recess receding from a main surface of the substrate and including a bottom surface and first and second sloped surfaces spaced apart from each other in a first direction perpendicular to the thickness direction of the substrate. The conductive layer includes first conduction paths on the first sloped surface, second conduction paths on the second sloped surface and bottom conduction paths on the bottom surface. The second sloped surface includes exposed regions line-symmetrical to the first conduction paths with respect to a line perpendicular to both the thickness direction of the substrate and the first direction, and the second conduction paths are not disposed at the exposed regions.

    Abstract translation: 半导体器件包括半导体元件，其上安装有半导体元件的半导体衬底，形成在衬底上的导电层和覆盖半导体元件的密封树脂。 衬底形成有从衬底的主表面退出的凹部，并且包括底面和在垂直于衬底的厚度方向的第一方向上彼此间隔开的第一和第二倾斜表面。 导电层包括第一倾斜表面上的第一导电路径，第二倾斜表面上的第二导电路径和底表面上的底部传导路径。 第二倾斜表面包括相对于垂直于基板的厚度方向和第一方向的线与第一导电路径线对称的暴露区域，并且第二导电路径不设置在暴露区域。

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