公开(公告)号：US11810882B2

公开(公告)日：2023-11-07

申请号：US17684292

申请日：2022-03-01

申请人： Micron Technology, Inc.

发明人： Wei Zhou

IPC分类号： H01L23/00

CPC分类号： H01L24/16 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0518 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05178 ,  H01L2224/05181 ,  H01L2224/05183 ,  H01L2224/05184 ,  H01L2224/05541 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11845 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/1318 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/13184 ,  H01L2224/13565 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/8185 ,  H01L2224/81815 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/07025

摘要： A semiconductor device assembly, comprising a first semiconductor device including a first substrate with a frontside surface, a plurality of solder bumps located on the frontside surface of the first substrate, and a first polymer layer on the frontside surface. The semiconductor device assembly also comprises a second semiconductor device including a second substrate with a backside surface, a plurality of TSVs protruding from the backside surface of the second substrate, and a second polymer layer on the backside surface of the first substrate, the second polymer layer having a plurality of openings corresponding to the plurality of TSVs. The first and second semiconductor devices are bonded such that the first polymer layer contacts the second polymer layer and each of the plurality of solder bumps extends into a corresponding one of the plurality of openings and contacts a corresponding one of the plurality of TSVs.

公开(公告)号：US09881900B2

公开(公告)日：2018-01-30

申请号：US15379437

申请日：2016-12-14

申请人： ROHM CO., LTD.

发明人： Hirofumi Takeda ,  Yoshihisa Takada

IPC分类号： H01L23/24 ,  H01L25/065 ,  H01L25/00 ,  H01L23/13 ,  H01L23/14 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L25/0652 ,  G01C17/30 ,  H01L23/13 ,  H01L23/147 ,  H01L23/24 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/11618 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13566 ,  H01L2224/13583 ,  H01L2224/13647 ,  H01L2224/13666 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/10158 ,  H01L2924/15156 ,  H01L2924/15157 ,  H01L2924/15321 ,  H01L2924/19102 ,  H01L2924/19105 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00012

摘要： A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).

公开(公告)号：US08435836B2

公开(公告)日：2013-05-07

申请号：US13007002

申请日：2011-01-14

申请人： Owen R. Fay ,  Warren M. Farnworth ,  David R. Hembree

发明人： Owen R. Fay ,  Warren M. Farnworth ,  David R. Hembree

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC分类号： H01L23/5384 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/03444 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05017 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05551 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05611 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1161 ,  H01L2224/1162 ,  H01L2224/1182 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/11831 ,  H01L2224/11903 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13075 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13562 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13687 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81345 ,  H01L2224/81365 ,  H01L2224/81815 ,  H01L2224/81898 ,  H01L2224/831 ,  H01L2224/83141 ,  H01L2224/83193 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods are disclosed. A system in accordance with a particular embodiment includes a first semiconductor substrate having a first substrate material, and a penetrating structure carried by the first semiconductor substrate. The system further includes a second semiconductor substrate having a second substrate material with a preformed recess. The penetrating structure of the first semiconductor substrate is received in the recess of the second semiconductor substrate and is mechanically engaged with the recess and secured to the second semiconductor substrate.

公开(公告)号：US08378486B2

公开(公告)日：2013-02-19

申请号：US12923885

申请日：2010-10-13

申请人： Fumihiro Bekku

发明人： Fumihiro Bekku

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L23/3114 ,  H01L24/02 ,  H01L24/13 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/11515 ,  H01L2224/11618 ,  H01L2224/11826 ,  H01L2224/13005 ,  H01L2224/13008 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/13191 ,  H01L2224/1329 ,  H01L2224/13291 ,  H01L2224/133 ,  H01L2224/13541 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/1411 ,  H01L2224/14151 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15788 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device includes a protective insulating film, an opening formed in the protective insulating film, an electrode pad located within the opening, a bump formed on the protective insulating film, and an interconnect. The bump includes a bump core and a conductive film. The bump core includes an insulating resin layer and a conductive resin layer located on the insulating resin layer. The conductive film is formed on at least the upper surface of the bump core. The interconnect connects the conductive film of the bump and the electrode pad.

摘要翻译： 半导体器件包括保护绝缘膜，形成在保护绝缘膜中的开口，位于开口内的电极垫，形成在保护绝缘膜上的凸起和互连。 凸块包括凸块和导电膜。 凸块包括绝缘树脂层和位于绝缘树脂层上的导电树脂层。 至少在凸起芯的上表面上形成导电膜。 互连连接凸块的导电膜和电极垫。

公开(公告)号：US20110226841A1

公开(公告)日：2011-09-22

申请号：US13131818

申请日：2008-11-27

申请人： Jun Wei ,  Xiao Fang Ang ,  Chee Cheong Wong ,  Zhong Chen

发明人： Jun Wei ,  Xiao Fang Ang ,  Chee Cheong Wong ,  Zhong Chen

IPC分类号： B23K31/02 ,  B23K20/02 ,  B32B15/04 ,  B32B5/16 ,  C09D7/12 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L21/2007 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11821 ,  H01L2224/11822 ,  H01L2224/11823 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13793 ,  H01L2224/13824 ,  H01L2224/13839 ,  H01L2224/13844 ,  H01L2224/13847 ,  H01L2224/13855 ,  H01L2224/13886 ,  H01L2224/1389 ,  H01L2224/13893 ,  H01L2224/1607 ,  H01L2224/16145 ,  H01L2224/81099 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81207 ,  H01L2224/8182 ,  H01L2225/06513 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/3512 ,  H01L2924/36 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/31678 ,  H01L2924/01074 ,  H01L2924/00

摘要： A method for forming direct metal-metal bond between metallic surfaces is disclosed. The method comprises depositing a first nanostructured organic coating (118) on a first metallic surface (116) to form a first passivation layer thereon, the first nanostructured organic coating (118) comprising an organic phase with nanoparticles dispersed within the organic phase, contacting the first nanostructured organic coating (118) with a second metallic surface (126), and applying on the first and second metallic surfaces (116, 126) at least a bonding temperature of at least room temperature and/or a bonding pressure for a bonding period to bond the first and second metallic surfaces (116, 126) thereby forming the direct metal-metal bond therebetween. A second nanostructured organic coating (128) comprising an organic phase with nanoparticles dispersed within the organic phase may also be deposited on the second metallic surface (126).

摘要翻译： 公开了在金属表面之间形成直接金属 - 金属结合的方法。 该方法包括在第一金属表面（116）上沉积第一纳米结构化有机涂层（118）以在其上形成第一钝化层，第一纳米结构有机涂层（118）包含有机相，纳米颗粒分散在有机相内， 具有第二金属表面（126）的第一纳米结构有机涂层（118），并且在第一和第二金属表面（116,126）上至少施加至少室温的粘结温度和/或粘合时间段的粘合压力 以接合第一和第二金属表面（116,126），从而在它们之间形成直接金属 - 金属粘合。 包含分散在有机相内的纳米颗粒的有机相的第二纳米结构有机涂层（128）也可沉积在第二金属表面（126）上。

公开(公告)号：US20110147177A1

公开(公告)日：2011-06-23

申请号：US13060994

申请日：2008-08-25

申请人： Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

发明人： Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

IPC分类号： H01H59/00 ,  B05D5/12 ,  B05D1/16 ,  B32B15/04 ,  B82Y99/00

CPC分类号： H01H1/0036 ,  B81B2207/07 ,  B81C1/00166 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  D01F9/127 ,  D01F9/133 ,  H01H1/027 ,  H01H2001/0052 ,  H01H2300/036 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05562 ,  H01L2224/05571 ,  H01L2224/11452 ,  H01L2224/1148 ,  H01L2224/1182 ,  H01L2224/11826 ,  H01L2224/13022 ,  H01L2224/13193 ,  H01L2224/13564 ,  H01L2224/136 ,  H01L2224/16237 ,  H01L2224/742 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81486 ,  H01L2224/81493 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/04941 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T428/23943 ,  Y10T428/31678 ,  H01L2224/13693 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A structure includes a conductive film (12) provided in an underlying layer (10); and a carbon nanotube bundle (20) including a plurality of carbon nanotubes each having one end connected to the conductive film (12), wherein, at other end side of the carbon nanotube bundle (20), at least carbon nanotubes allocated at outer side of the carbon nanotube bundle (20) extend with convex curvatures toward the outside of the carbon nanotube bundle (20), and the convex curvatures of the carbon nanotubes allocated at the outer side of the carbon nanotube bundle are larger than those of inner side of the carbon nanotube bundle (20), and diameters of the carbon nanotube bundle (20) decrease toward the other end of the carbon nanotube bundle (20).

摘要翻译： 一种结构包括设置在下层（10）中的导电膜（12）。 以及包含多个碳纳米管的碳纳米管束（20），所述多个碳纳米管的一端与所述导电膜（12）连接，其中，在所述碳纳米管束（20）的另一端侧，至少分配有碳纳米管 的碳纳米管束（20）的外侧的凸曲率朝向碳纳米管束（20）的外侧以凸曲率延伸，并且分配在碳纳米管束外侧的碳纳米管的凸曲率大于 碳纳米管束（20）和碳纳米管束（20）的直径朝向碳纳米管束（20）的另一端减小。

公开(公告)号：US07629202B2

公开(公告)日：2009-12-08

申请号：US11532551

申请日：2006-09-18

申请人： Jonas R Weiss ,  Thomas E. Morf ,  Heike E Riel

发明人： Jonas R Weiss ,  Thomas E. Morf ,  Heike E Riel

IPC分类号： H10L21/44

CPC分类号： H01L23/60 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/10126 ,  H01L2224/11821 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/1184 ,  H01L2224/13109 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13171 ,  H01L2224/13172 ,  H01L2224/13184 ,  H01L2224/13187 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13601 ,  H01L2224/13617 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13687 ,  H01L2224/1369 ,  H01L2224/165 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30205 ,  H01L2924/04941 ,  H01L2924/01003 ,  H01L2924/0535 ,  H01L2924/07812

摘要： A method and apparatus for providing ESD protection of an integrated circuit using a temporary conductive coating. The method deposits a temporary conductive coating upon a chip die between contacts to be protected such that a conductive path is created between contacts, provides a carrier substrate that is then bonded to the chip die and then the conductive coating is deactivated to ready the device for use. The deactivation of the conductive coating may involve physical removal of the conductive coating (or a portion thereof), oxidation of the conductive coating to form a non-conductive coating, or some other process to interrupt the conductive path between contacts. The apparatus of the invention is a chip having a temporary conductive coating deposited thereon to protect the integrated circuit from ESD events.

摘要翻译： 一种用于使用临时导电涂层提供集成电路的ESD保护的方法和装置。 该方法将待保护的触点之间的临时导电涂层沉积在芯片芯片上，使得在触点之间产生导电路径，提供随后结合到芯片模具的载体基板，然后导电涂层停用以准备该装置 使用。 导电涂层的失活可以涉及导电涂层（或其一部分）的物理去除，导电涂层的氧化以形成非导电涂层，或者一些其它中断接触之间的导电路径的过程。 本发明的装置是其上沉积有临时导电涂层的芯片，以保护集成电路免受ESD事件的影响。

公开(公告)号：US20170200687A1

公开(公告)日：2017-07-13

申请号：US15470341

申请日：2017-03-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ying-Ju Chen ,  Hsien-Wei Chen

IPC分类号： H01L23/00

CPC分类号： H01L24/13 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/525 ,  H01L23/53238 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05569 ,  H01L2224/05583 ,  H01L2224/05655 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/11 ,  H01L2224/11334 ,  H01L2224/11826 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/13616 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13681 ,  H01L2224/13686 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/04953 ,  H01L2924/01079 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/04941 ,  H01L2924/01047

摘要： Mechanisms for forming a semiconductor device are provided. The semiconductor device includes a contact pad over a substrate. The semiconductor device also includes a passivation layer over the substrate and a first portion of the contact pad, and a second portion of the contact pad is exposed through an opening. The semiconductor device further includes a post-passivation interconnect layer over the passivation layer and coupled to the second portion of the contact pad. In addition, the semiconductor device includes a bump over the post-passivation interconnect layer and outside of the opening. The semiconductor device also includes a diffusion barrier layer physically insulating the bump from the post-passivation interconnect layer while electrically connecting the bump to the post-passivation interconnect layer.

公开(公告)号：US20170133296A1

公开(公告)日：2017-05-11

申请号：US15410625

申请日：2017-01-19

申请人： Intel Corporation

发明人： Chandra M. Jha ,  Feras EID ,  Johanna M. SWAN ,  Ashish GUPTA

IPC分类号： H01L23/373 ,  H01L23/00

CPC分类号： H01L23/3733 ,  H01L23/3736 ,  H01L23/3737 ,  H01L23/433 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/1133 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/11826 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13078 ,  H01L2224/13147 ,  H01L2224/13193 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/271 ,  H01L2224/27436 ,  H01L2224/2745 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/29347 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32058 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06524 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/16724 ,  H01L2924/16747 ,  H01L2924/3511 ,  Y10T428/249921 ,  Y10T428/26 ,  H01L2224/27 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00014

摘要： A copper nanorod thermal interface material (TIM) is described. The copper nanorod TIM includes a plurality of copper nanorods having a first end thermally coupled with a first surface, and a second end extending toward a second surface. A plurality of copper nanorod branches are formed on the second end. The copper nanorod branches are metallurgically bonded to a second surface. The first surface may be the back side of a die. The second surface may be a heat spread or a second die. The TIM may include a matrix material surrounding the copper nanorods. In an embodiment, the copper nanorods are formed in clusters.

公开(公告)号：US20170098625A1

公开(公告)日：2017-04-06

申请号：US15379437

申请日：2016-12-14

申请人： ROHM CO., LTD.

发明人： Hirofumi TAKEDA ,  Yoshihisa TAKADA

IPC分类号： H01L25/065 ,  H01L23/13 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/00 ,  H01L23/14

CPC分类号： H01L25/0652 ,  G01C17/30 ,  H01L23/13 ,  H01L23/147 ,  H01L23/24 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/11618 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13566 ,  H01L2224/13583 ,  H01L2224/13647 ,  H01L2224/13666 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/10158 ,  H01L2924/15156 ,  H01L2924/15157 ,  H01L2924/15321 ,  H01L2924/19102 ,  H01L2924/19105 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00012

摘要： A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).