Selective damascene chemical mechanical polishing
    1.
    发明授权
    Selective damascene chemical mechanical polishing 失效
    选择性镶嵌化学机械抛光

    公开(公告)号:US06261157B1

    公开(公告)日:2001-07-17

    申请号:US09318225

    申请日:1999-05-25

    IPC分类号: B24B722

    摘要: A selective Damascene chemical mechanical polishing (CMP) technique is used to planarize a semiconductor device to remove surface topography. The semiconductor device includes a semiconductor layer formed on a substrate, an insulating layer formed over the semiconductor layer and patterned to expose a portion of the semiconductor layer, a barrier layer formed over the insulating layer and the exposed portion of the semiconductor layer, and an electrically conductive layer formed over the barrier layer. The semiconductor device is pressed against a first rotating polishing pad that has no embedded abrasive particles to remove a portion of the conductive layer that overlies both the barrier layer and the insulating layer. The semiconductor device is then pressed against a second rotating polishing pad that has embedded abrasive particles to expose a portion of the barrier layer that overlies the insulating layer. The device is then pressed against a third rotating polishing pad that has no embedded abrasive particles to remove the portion of the barrier layer that overlies the insulating layer.

    摘要翻译: 使用选择性的大马士革化学机械抛光(CMP)技术来平面化半导体器件以去除表面形貌。 半导体器件包括形成在衬底上的半导体层,形成在半导体层上并被图案化以暴露半导体层的一部分的绝缘层,形成在绝缘层上的阻挡层和半导体层的暴露部分, 形成在阻挡层上的导电层。 半导体器件被压在没有嵌入的磨料颗粒的第一旋转抛光垫上,以去除覆盖阻挡层和绝缘层两者的导电层的一部分。 然后将半导体器件压在具有嵌入的磨料颗粒的第二旋转抛光垫上,以暴露位于绝缘层上的阻挡层的一部分。 然后将装置压在没有嵌入的磨料颗粒的第三旋转抛光垫上,以去除覆盖在绝缘层上的阻挡层的部分。

    Chemical mechanical polishing composition and process
    3.
    发明授权
    Chemical mechanical polishing composition and process 失效
    化学机械抛光组合物和工艺

    公开(公告)号:US06872329B2

    公开(公告)日:2005-03-29

    申请号:US09842476

    申请日:2001-04-25

    摘要: A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.

    摘要翻译: 提供了用于平坦化基板表面的方法和组合物。 抛光组合物包括能够氧化经历平坦化的金属并产生与氧化金属络合的络合剂和稳定剂如锡酸盐的氧化剂。 组合物还可以包括研磨颗粒和/或抑制剂。 组合物可以用于多步抛光工艺中,包括抛光衬底表面以相对于阻挡层和电介质层选择性去除金属层,并使用该组合物抛光衬底表面以非选择性地去除金属层, 阻挡层和介电层。

    Solution to metal re-deposition during substrate planarization
    7.
    发明授权
    Solution to metal re-deposition during substrate planarization 失效
    在衬底平面化期间金属再沉积的解决方案

    公开(公告)号:US06653242B1

    公开(公告)日:2003-11-25

    申请号:US09608078

    申请日:2000-06-30

    IPC分类号: H01L21302

    CPC分类号: H01L21/3212 C09G1/04

    摘要: A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.

    摘要翻译: 一种用于平坦化衬底的方法和组合物。 组合物包括一种或多种表面活性剂,包括一种或多种阴离子表面活性剂,Zweitter离子表面活性剂,分散剂或其组合,一种或多种螯合剂,一种或多种氧化剂,一种或多种腐蚀抑制剂和去离子水。 组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。 该方法包括使用包含一种或多种阴离子表面活性剂,Zweitter离子型表面活性剂或其组合的表面活性剂的组合物平面化底物。

    Vibration damping in a chemical mechanical polishing system
    8.
    发明授权
    Vibration damping in a chemical mechanical polishing system 有权
    化学机械抛光系统中的振动阻尼

    公开(公告)号:US07014545B2

    公开(公告)日:2006-03-21

    申请号:US10754997

    申请日:2004-01-10

    IPC分类号: B24B7/00

    摘要: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译: 用于化学机械抛光的载体头包括基底,附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构,以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部,下部和分隔上部和下部的振动阻尼器。 振动阻尼器,减震器包括当经受变形时不能反弹到其原始形状的材料。

    Vibration damping in a chemical mechanical polishing system
    9.
    发明授权
    Vibration damping in a chemical mechanical polishing system 有权
    化学机械抛光系统中的振动阻尼

    公开(公告)号:US06676497B1

    公开(公告)日:2004-01-13

    申请号:US09658417

    申请日:2000-09-08

    IPC分类号: B24B700

    摘要: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译: 用于化学机械抛光的载体头包括基底,附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构,以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部,下部和分隔上部和下部的振动阻尼器。 振动阻尼器,减震器包括当经受变形时不能反弹到其原始形状的材料。

    Vibration damping in chemical mechanical polishing system
    10.
    发明授权
    Vibration damping in chemical mechanical polishing system 失效
    化学机械抛光系统中的振动阻尼

    公开(公告)号:US07331847B2

    公开(公告)日:2008-02-19

    申请号:US11333992

    申请日:2006-01-17

    IPC分类号: B24B7/00 B24B9/00

    摘要: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

    摘要翻译: 用于化学机械抛光的载体头包括基底,附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构,以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 抛光台包括压板,安装在压板上的振动阻尼器和安装在振动阻尼器上的衬底抛光垫。 振动阻尼器包括当经受变形时不会反弹到其原始形状的材料。