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1.发明授权公开(公告)号：US11169874B2
公开(公告)日：2021-11-09
申请号：US16547425
申请日：2019-08-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-Min Shin , Hong-Rak Son
Abstract: A memory system includes; a memory device, a memory controller including a first interface, a second interface, and a first data processor having a first error correction code (ECC) engine, and a field programmable gate array (FPGA) including a third interface connected to the first interface, a fourth interface connected to the second interface, a fifth interface connected to an external host, and a second data processor having a second ECC engine. The memory controller may configure a normal write operation path or highly reliable write operation path.
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公开(公告)号：US09583189B2
公开(公告)日：2017-02-28
申请号：US15012881
申请日：2016-02-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pil-Sang Yoon , Eun-Chu Oh , Jun-Jin Kong , Hong-Rak Son , Dong-Min Shin
CPC classification number: G11C13/0097 , G11C11/5607 , G11C11/5657 , G11C11/5664 , G11C11/5678 , G11C11/5685 , G11C13/0033 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0076 , G11C2013/0085 , G11C2213/72
Abstract: A method of operating a memory device including a plurality of memory cells is provided. The method includes receiving a first write command, determining whether a target memory cell is deteriorated or not, in response to the first write command, and writing the second data by selectively erasing the target memory cell according to a result of the determination and by programming the target memory cell.
Abstract translation: 提供一种操作包括多个存储单元的存储器件的方法。 该方法包括响应于第一写入命令，接收第一写命令，确定目标存储器单元是否恶化，以及根据确定结果选择性地擦除目标存储器单元并通过编程来写入第二数据 目标存储单元。
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3.发明授权Memory system and method of operating memory system using reconstructed data 有权使用重构数据操作存储器系统的存储器系统和方法公开(公告)号：US09098391B2
公开(公告)日：2015-08-04
申请号：US14052834
申请日：2013-10-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Seuk Yoo , Jun-Jin Kong , Chang-Kyu Seol , Hong-Rak Son , Young-Geon Yoo
CPC classification number: G06F12/00 , G06F11/10 , G06F11/1048 , G11C11/5628 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/3427 , G11C16/3454 , G11C29/00 , G11C2211/5648
Abstract: Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells.
Abstract translation: 提供了一种操作存储器系统的方法。 该方法包括将第一位数据编程到多个存储器单元中; 识别处于第一状态并且具有等于或大于来自由第一位数据编程的存储器单元的第一电压的阈值电压的目标存储器单元; 接收要编程到存储器单元中的第二位数据; 通过对所述第二位数据执行第一处理来计算多个第三位数据; 以及当所述存储器单元分别被所述多个第三位数据中的每一个编程时，选择将所述最大数目的目标存储单元从所述第一状态改变到第二状态的所计算的多个第三位数据的第三位数据。 所选择的第三位数据被编程到存储器单元中。
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公开(公告)号：US10438684B2
公开(公告)日：2019-10-08
申请号：US14696609
申请日：2015-04-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seong-Hyeog Choi , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon , Chang-Kyu Seol , Ki-Jun Lee
Abstract: A method of operating a memory system, having a non-volatile memory device, includes processing a response to a first request toward the memory device by using an original key, in response to the first request, generating and storing first parity data corresponding to the original key, and deleting the original key.
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公开(公告)号：US09761292B2
公开(公告)日：2017-09-12
申请号：US14693300
申请日：2015-04-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chang-Kyu Seol , Seong-Hyeog Choi , Jun-Jin Kong , Hong-Rak Son
CPC classification number: G11C7/24 , G06F11/1016 , G06F11/1044 , G06F11/1068 , G06F11/1072 , G06F12/0246 , G06F12/1425 , G06F21/31 , G06F2212/1052 , G06F2212/7201 , G09C1/00 , G11C29/50004 , G11C2029/0411 , G11C2029/5004 , H04L9/32 , H04L9/3278
Abstract: Provided are a flash memory device, a flash memory system, and methods of operating the same. A method of operating a flash memory system includes selecting memory cells of a flash memory in response to an authentication challenge, programming pieces of input data into the selected memory cells, respectively, reading the selected memory cells and generating and storing control information, dividing the selected memory cells into at least one first region memory cell and at least one second region memory cell based on the control information, and setting read values of the at least one first region memory cell and the at least one second region memory cell as a first value and a second value, respectively, and generating an authentication response in the response to the authentication challenge.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20150363336A1
公开(公告)日：2015-12-17
申请号：US14725542
申请日：2015-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SEONG-HYEOG CHOI , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon , Chang-Kyu Seol , Jung-Soo Chung
CPC classification number: G06F12/1416 , G06F3/0623 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/1008 , G06F21/44 , G06F21/80 , G06F2212/1052 , G06F2221/2103 , Y02D10/13
Abstract: A method of operating a memory system including a first function block and a second function block includes generating a first authentication response indicating physical characteristics of the memory system, via the second function block, in response to a first authentication request received from the first function block; performing an error correction decoding on the first authentication response, via the first function block, by using first parity data corresponding to the first authentication request; and determining whether the second function block is authentic, depending on a result of the error correction decoding.
Abstract translation: 一种操作包括第一功能块和第二功能块的存储器系统的方法包括响应于从第一功能块接收到的第一认证请求，经由第二功能块生成指示存储器系统的物理特性的第一认证响应 ; 通过使用与第一认证请求对应的第一奇偶校验数据，经由第一功能块对第一认证响应进行纠错解码; 以及根据纠错解码的结果确定第二功能块是否可信。
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公开(公告)号：US10566066B2
公开(公告)日：2020-02-18
申请号：US16421229
申请日：2019-05-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hye-Jeong So , Dong-Hwan Lee , Seong-Hyeog Choi , Eun-Chu Oh , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon
Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
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公开(公告)号：US09570174B2
公开(公告)日：2017-02-14
申请号：US14446350
申请日：2014-07-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Avner Dor , Moshe Twitto , Jun-Jin Kong , Hong-Rak Son , Young-Geon Yoo
CPC classification number: G11C16/10 , G06F11/1048 , G11C11/5628 , G11C16/0483 , G11C16/08
Abstract: Provided are a coding/decoding method for use in a multi-level memory system. The coding method includes searching for a set of symbols that may generate a forbidden pattern that is set initially from an input data stream, and sticking at least one bit included in the searched set of the symbols that may generate the forbidden pattern so as not to generate the forbidden pattern.
Abstract translation: 提供了一种用于多级存储器系统中的编码/解码方法。 编码方法包括搜索可以生成最初从输入数据流设置的禁止模式的一组符号，并且将包含在搜索到的可能生成禁止模式的符号组中的至少一个比特，以便不 生成禁止的模式。
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9.发明授权Data compression apparatus, data compression method, and memory system including the data compression apparatus 有权数据压缩装置，数据压缩方法以及包括数据压缩装置的存储系统公开(公告)号：US09407286B2
公开(公告)日：2016-08-02
申请号：US14017525
申请日：2013-09-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae-Hwan Kim , Jun-Jin Kong , Dae-Wook Kim , Man-Keun Seo , Hong-Rak Son
CPC classification number: H03M7/3084
Abstract: Provided are data compression method, data compression apparatus, and memory system. The data compression method includes receiving input data and generating a hash key for the input data, searching a hash table with the generated hash key, and if it is determined that the input data is a hash hit, compressing the input data using the hash table; and searching a cache memory with the input data, and if it is determined that the input data is a cache hit, compressing the input data using the cache memory.
Abstract translation: 提供数据压缩方法，数据压缩装置和存储系统。 数据压缩方法包括：接收输入数据并产生用于输入数据的哈希密钥，用生成的散列密钥搜索散列表，以及如果确定输入数据是散列命中，则使用散列表压缩输入数据 ; 以及使用所述输入数据搜索高速缓冲存储器，并且如果确定所述输入数据是高速缓存命中，则使用所述高速缓冲存储器压缩所述输入数据。
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10.发明授权公开(公告)号：US11669395B2
公开(公告)日：2023-06-06
申请号：US17499499
申请日：2021-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-Min Shin , Hong-Rak Son
CPC classification number: G06F11/1068 , G06F7/58 , G06F13/1668 , G11C11/409 , G11C29/52 , H03M13/095 , H03M13/1105
Abstract: A memory system includes; a memory device, a memory controller including a first interface, a second interface, and a first data processor having a first error correction code (ECC) engine, and a field programmable gate array (FPGA) including a third interface connected to the first interface, a fourth interface connected to the second interface, a fifth interface connected to an external host, and a second data processor having a second ECC engine. The memory controller may configure a normal write operation path or highly reliable write operation path.
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