High-frequency acceleration type ion acceleration and transportation apparatus having high energy precision
    1.
    发明授权
    High-frequency acceleration type ion acceleration and transportation apparatus having high energy precision 有权
    具有高能量精度的高频加速型离子加速运输装置

    公开(公告)号:US08952340B2

    公开(公告)日:2015-02-10

    申请号:US14313128

    申请日:2014-06-24

    Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

    Abstract translation: 高频加速型离子加速和输送装置是通过具有相对于设定束能量的能量扩散的高频加速系统加速离子束之后的束线,并且包括能量分析偏转电磁体和水平束聚焦元件 。 在离子加速输送装置中,在能量分散和光束尺寸适当的位置处,另外设置由能量扩散限制狭缝和能量分析狭缝构成的双狭缝。 基于能量分析偏转电磁体和水平光束聚焦元件的条件确定位置,并且双缝执行能量分离和能量定义,并且通过在抑制时能够进行更小的能量扩展的调整来减小离子束的能量扩展 光束电流量的减少。

    ION BEAM MEASURING DEVICE AND METHOD OF MEASURING ION BEAM
    2.
    发明申请
    ION BEAM MEASURING DEVICE AND METHOD OF MEASURING ION BEAM 有权
    离子束测量装置和测量离子束的方法

    公开(公告)号:US20150001418A1

    公开(公告)日:2015-01-01

    申请号:US14314448

    申请日:2014-06-25

    Abstract: An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.

    Abstract translation: 一种离子束测量装置,包括:掩模,其用于将原始离子束成形为测量离子束,所述测量离子束包括垂直于离子束的行进方向的ay方向延长的ay光束部分和在垂直于离子束的行进方向延伸的x光束部分 x方向垂直于行进方向和y方向; 检测单元,被配置为检测所述y光束部分的x方向位置和所述x光束部分的y方向位置; 以及射束角计算单元,被配置为使用y方向位置来计算x方向射束角度,并且使用y方向位置来计算y方向射束角度。

    HIGH-ENERGY ION IMPLANTER
    3.
    发明申请
    HIGH-ENERGY ION IMPLANTER 有权
    高能离子植绒

    公开(公告)号:US20140352615A1

    公开(公告)日:2014-12-04

    申请号:US14290406

    申请日:2014-05-29

    Abstract: A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter.

    Abstract translation: 高能离子注入机包括加速离子束以产生高能离子束的高能多级线性加速单元,将高能离子束朝向半导体的方向改变的偏转单元 晶片和将偏转的高能离子束传送到晶片的光束传输单元。 光束传输单元包括光束整形器,高能束扫描器,高能电场型光束准直仪和高能电场型最终能量滤光器。

    ION IMPLANTER, BEAM ENERGY MEASURING DEVICE, AND METHOD OF MEASURING BEAM ENERGY
    4.
    发明申请
    ION IMPLANTER, BEAM ENERGY MEASURING DEVICE, AND METHOD OF MEASURING BEAM ENERGY 有权
    离子植入物,光束能量测量装置和测量光束能量的方法

    公开(公告)号:US20150262787A1

    公开(公告)日:2015-09-17

    申请号:US14656132

    申请日:2015-03-12

    Abstract: A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.

    Abstract translation: 离子注入机中的光束能量测量装置包括平行度测量单元,其测量在离子注入机的光束准直器的下游处的离子束的平行度,以及能量计算单元,其计算来自所测量的平行度的离子束的能量 。 离子注入机还可以包括控制单元,其基于所测量的离子束的能量来控制高能量多级线性加速单元,使得离子束具有目标能量。

    HIGH-ENERGY ION IMPLANTER
    5.
    发明申请
    HIGH-ENERGY ION IMPLANTER 有权
    高能离子植绒

    公开(公告)号:US20140353517A1

    公开(公告)日:2014-12-04

    申请号:US14287767

    申请日:2014-05-27

    Abstract: A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

    Abstract translation: 高能离子注入机包括一个束生成单元,它包括一个离子源和一个质量分析器,一个高能多级线性加速单元,一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器,高能束扫描器,高能束准直仪和高能最终能量滤光器。 此外,高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。

    High-energy ion implanter
    6.
    发明授权
    High-energy ion implanter 有权
    高能离子注入机

    公开(公告)号:US08987690B2

    公开(公告)日:2015-03-24

    申请号:US14287767

    申请日:2014-05-27

    Abstract: A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

    Abstract translation: 高能离子注入机包括一个束生成单元,它包括一个离子源和一个质量分析器,一个高能多级线性加速单元,一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器,高能束扫描器,高能束准直仪和高能最终能量滤光器。 此外,高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。

    ION IMPLANTATION APPARATUS
    7.
    发明申请
    ION IMPLANTATION APPARATUS 有权
    离子植入装置

    公开(公告)号:US20140150723A1

    公开(公告)日:2014-06-05

    申请号:US14096735

    申请日:2013-12-04

    Abstract: An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.

    Abstract translation: 离子注入装置包括:用于加速在离子源中产生的离子束的多个单元; 以及用于调整扫描光束并将离子注入晶片的多个单元。 具有相对的长直线部分的水平U形折叠型光束线包括多个单元,用于将长直线部分中的扫描光束调整为具有与离子源大致相同的长度和用于加速离子束的多个单元。

    HIGH-FREQUENCY ACCELERATION TYPE ION ACCELERATION AND TRANSPORTATION APPARATUS HAVING HIGH ENERGY PRECISION
    8.
    发明申请
    HIGH-FREQUENCY ACCELERATION TYPE ION ACCELERATION AND TRANSPORTATION APPARATUS HAVING HIGH ENERGY PRECISION 有权
    具有高能量精度的高频加速型离子加速和运输装置

    公开(公告)号:US20140374617A1

    公开(公告)日:2014-12-25

    申请号:US14313128

    申请日:2014-06-24

    Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

    Abstract translation: 高频加速型离子加速和输送装置是通过具有相对于设定束能量的能量扩散的高频加速系统加速离子束之后的束线,并且包括能量分析偏转电磁体和水平束聚焦元件 。 在离子加速输送装置中,在能量分散和光束尺寸适当的位置处,另外设置由能量扩散限制狭缝和能量分析狭缝构成的双狭缝。 基于能量分析偏转电磁体和水平光束聚焦元件的条件确定位置,并且双缝执行能量分离和能量定义,并且通过在抑制时能够进行更小的能量扩展的调整来减小离子束的能量扩展 光束电流量的减少。

    HIGH-ENERGY ION IMPLANTER
    9.
    发明申请
    HIGH-ENERGY ION IMPLANTER 有权
    高能离子植绒

    公开(公告)号:US20140366801A1

    公开(公告)日:2014-12-18

    申请号:US14302901

    申请日:2014-06-12

    Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets.

    Abstract translation: 高能离子注入机包括:束生成单元,其包括离子源和质量分析器; 高能量多级线性加速单元,其加速离子束以产生高能离子束; 高能量束偏转单元,其将高能离子束的朝向晶片的方向改变; 以及将偏转的高能离子束输送到晶片的光束传送单元。 偏转单元由多个偏转电磁体构成,并且在多个偏转电磁体之间插入至少一个水平聚焦元件。

    HIGH-ENERGY ION IMPLANTER
    10.
    发明申请
    HIGH-ENERGY ION IMPLANTER 有权
    高能离子植绒

    公开(公告)号:US20140345522A1

    公开(公告)日:2014-11-27

    申请号:US14286083

    申请日:2014-05-23

    Abstract: A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter.

    Abstract translation: 高能离子注入机包括:束生成单元,其包括离子源和质谱仪; 射频多级线性加速单元; 偏转单元,其包括用于通过动量对离子进行过滤的磁场型能量分析装置; 梁输送线单元; 和基板处理/供给单元。 在该装置中,除了磁场型质谱仪之外,还在电场型光束准直仪和晶片之间插入通过电场使高能扫描光束在垂直方向上偏转的电场型最终能量过滤器, 作为动力滤波器的磁场型能量分析装置和作为速度滤波器的射频多级线性加速装置。

Patent Agency Ranking