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1.发明授权Light emitting diode chip having distributed Bragg reflector and method of fabricating the same 有权具有分布式布拉格反射体的发光二极管芯片及其制造方法公开(公告)号：US09324919B2
公开(公告)日：2016-04-26
申请号：US14590493
申请日：2015-01-06
Applicant: Seoul Viosys Co., Ltd.
Inventor： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee , Chung Hoon Lee
CPC classification number: H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
Abstract: A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.
Abstract translation: 一种发光二极管芯片，包括基板，布置在基板上的发光结构，所述发光结构包括布置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以及分布布拉格反射器 反射从发光结构发出的光。 分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率， 布喇格反射器对于400至700nm的全波长范围内的光具有至少90％的反射率。
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2.发明授权公开(公告)号：US10128306B2
公开(公告)日：2018-11-13
申请号：US15401599
申请日：2017-01-09
Applicant: Seoul Viosys Co., Ltd.
Inventor： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee , Chung Hoon Lee
IPC: H01L33/00 , H01L27/15 , H01L33/46 , H01L33/22 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/06 , H01L33/32 , H01L33/42
Abstract: A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.
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3.发明授权Light emitting diode chip having distributed Bragg reflector and method of fabricating the same 有权具有分布式布拉格反射体的发光二极管芯片及其制造方法公开(公告)号：US09577157B2
公开(公告)日：2017-02-21
申请号：US15069260
申请日：2016-03-14
Applicant: Seoul Viosys Co., Ltd.
Inventor： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee , Chung Hoon Lee
CPC classification number: H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
Abstract: A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.
Abstract translation: 一种包括封装体和引线的发光二极管封装，所述封装体包括安装表面，设置在所述安装表面上的发光结构，所述发光结构包括设置在第一导电型半导体 层和第二导电型半导体层，设置在发光结构上的荧光体层和布置在发光结构和安装表面之间的分布式布拉格反射器。 分布式布拉格反射器包括第一分布式布拉格反射器和第二分布布拉格反射器，并且第一分布式布拉格反射器内的材料层的光学厚度大于第二分布布拉格反射器内材料层的光学厚度。
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4.发明申请公开(公告)号：US20140209952A1
公开(公告)日：2014-07-31
申请号：US14229713
申请日：2014-03-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Hee YE , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。
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公开(公告)号：US09455378B2
公开(公告)日：2016-09-27
申请号：US14229713
申请日：2014-03-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Hee Ye , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。
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Patent Agency Ranking
公开(公告)号：US09202973B2
公开(公告)日：2015-12-01
申请号：US14099423
申请日：2013-12-06
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Kyu Kim , So Ra Lee , Ho Jun Suk , Jin Cheol Shin
IPC: H01L29/18 , H01L33/00 , H01L33/08 , H01L27/15 , H01L33/58 , H01L33/14 , H01L33/20 , H01L33/38 , H01L33/62
CPC classification number: H01L33/08 , H01L27/156 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.
Abstract translation: 本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。 发光二极管包括基板和形成在基板上的多个发光单元。 每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。 第一电极焊盘形成在发光单元的第一区域中。 具有直线形状的第二电极焊盘设置成面对第一电极焊盘，同时区域地限定与第二区域的边界一起的周边区域。 导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。
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公开(公告)号：US20140209963A1
公开(公告)日：2014-07-31
申请号：US14229693
申请日：2014-03-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Sum Geun Lee , Jin Cheol Shin , Yeo Jin Yoon , Kyoung Wan Kim , Jeong Hee Yang
IPC: H01L33/38
CPC classification number: H01L33/387 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.
Abstract translation: 发光二极管包括设置在基板上并彼此间隔开的至少两个发光单元，其中至少两个发光单元中的每一个包括第一导电型半导体层，有源层和第二导电 型半导体层。 所述至少两个发光单元中的每一个包括设置在所述第一导电类型半导体层上的阴极，设置在所述第二导电类型半导体层上的阳极和所述至少两个发光的第一发光单元的阴极 电池通过互连部分串联连接到与第一发光单元相邻的至少两个发光单元的第二发光单元的阳极。
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公开(公告)号：US09673355B2
公开(公告)日：2017-06-06
申请号：US14229693
申请日：2014-03-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Sum Geun Lee , Jin Cheol Shin , Yeo Jin Yoon , Kyoung Wan Kim , Jeong Hee Yang
CPC classification number: H01L33/387 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.
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9.发明授权Light emitting diode chip having distributed bragg reflector and method of fabricating the same 有权具有分布式布拉格反射体的发光二极管芯片及其制造方法公开(公告)号：US09343631B2
公开(公告)日：2016-05-17
申请号：US14606863
申请日：2015-01-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee , Chung Hoon Lee
CPC classification number: H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.
Abstract translation: 一种发光二极管芯片，被配置为发射第一波长范围的光和包括基板的第二波长范围的光，设置在所述基板的第一表面上的发光结构，所述发光结构包括有源层 设置在第一导电类型半导体层和第二导电类型半导体层之间并被配置为发射第一波长范围的光，以及布置在基板的第二表面上的第一和第二分布布拉格反射器（DBR）。 第一DBR被设置为比第二DBR更靠近基板，第一波长范围包括蓝色波长范围，第一DBR包括对于第二波长范围的光比第一波长范围的光更高的反射率， 对于第一波长范围的光，DBR包括比对于第二波长范围的光更高的反射率。
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公开(公告)号：US20140110729A1
公开(公告)日：2014-04-24
申请号：US14138917
申请日：2013-12-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheol Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC: H01L33/62
CPC classification number: H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。
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