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    FILM FOR APPLYING COMPRESSIVE STRESS TO CERAMIC MATERIALS
    3.
    发明申请
    FILM FOR APPLYING COMPRESSIVE STRESS TO CERAMIC MATERIALS 审中-公开

    公开(公告)号：US20180375978A1

    公开(公告)日：2018-12-27

    申请号：US16015428

    申请日：2018-06-22

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  DEEPIKA SINGH

    IPC: H04M1/02

    Abstract: A method to provide compressive stress to substrates includes depositing a film on a ceramic substrate at a deposition temperature (Td) to form an article, the film having a difference relative to the ceramic substrate at Td in a coefficient thermal expansion (CTE) of at least 1.0×10−6/K and a difference in a refractive index >0.10. At least a portion of the thickness the film is converted in at least one of composition, phase and microstructure by lowering or raising the temperature from Td to reach a changed temperature (Tc) that is at least 100° C. different from Td. The film converting conditions result in the converted film portion providing a difference in refractive index at the Tc between the converted film and the ceramic substrate of ≤|0.10|. The temperature of the article is then lowered to room temperature.

    CHEMICAL MECHANICAL POLISHING OF ALUMINA
    4.
    发明申请
    CHEMICAL MECHANICAL POLISHING OF ALUMINA 有权
    氧化铝的化学机械抛光

    公开(公告)号：US20160032461A1

    公开(公告)日：2016-02-04

    申请号：US14450885

    申请日：2014-08-04

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  KANNAN BALASUNDARAM ,  ARUL CHAKKARAVARTHI ARJUNAN ,  DEEPIKA SINGH ,  WEI BAI

    IPC: C23F3/00 ,  C09G1/04

    CPC classification number: B24B37/20 ,  C09G1/02 ,  C09G1/04 ,  C23F3/00

    Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size 150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

    Abstract translation: CMP方法使用在水中包含第一金属氧化物或半导体氧化物颗粒（第一氧化物颗粒）的浆料。 至少一个颗粒特征选自（i）具有多分散性> 30％的第一氧化物颗粒，（ii）包括第一或第II族离子的第一氧化物颗粒上的涂层，过渡金属氧化物或有机材料，（iii）第一 与煅制氧化物颗粒混合的氧化物颗粒，（iv）平均初级尺寸> 50nm的第一氧化物颗粒与平均初级尺寸<25nm的热解氧化物颗粒混合，和（v）每单位面积的每个表面积的第一氧化物颗粒< 100m 2 / gm与具有平均每单位面积重量> 150m 2 / gm的另一种氧化物颗粒混合。 将具有氧化铝表面的基板放入CMP设备中，并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。

    CMP POLISHING PAD CONDITIONER
    5.
    发明申请
    CMP POLISHING PAD CONDITIONER 审中-公开

    公开(公告)号：US20190202028A1

    公开(公告)日：2019-07-04

    申请号：US16233943

    申请日：2018-12-27

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  DEEPIKA SINGH

    IPC: B24B53/017

    CPC classification number: B24B53/017 ,  B24B53/12

    Abstract: A method of processing chemical mechanical polishing (CMP) pad conditioners includes providing the CMP pad conditioner including conditioner substrate that is a metal, ceramic or a metal-ceramic material with a plurality of hard conditioner particles with a Vickers hardness greater than 3,000 Kg/mm2 bonded to a top surface of the conditioner substrate, and a slurry including an aqueous medium and a plurality of hard slurry particles having a hardness greater than 3,000 Kg/mm2. The surface of the pad conditioner is polished in a CMP apparatus using a polishing pad. After the polishing each conditioner particle has at least one exposed facet, and the plurality of hard conditioner particles have a maximum average protrusion-to-protrusion flatness (PPF) difference of 20 microns, and a sharpest edge measured by a value of a cutting edge radius (CER) that lies at an edge of the facet for at least 80% of the facets.

    METHOD OF CHEMICAL MECHANICAL POLISHING OF ALUMINA
    6.
    发明申请
    METHOD OF CHEMICAL MECHANICAL POLISHING OF ALUMINA 审中-公开
    铝的化学机械抛光方法

    公开(公告)号：US20170072530A1

    公开(公告)日：2017-03-16

    申请号：US15341130

    申请日：2016-11-02

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  KANNAN BALASUNDARAM ,  ARUL CHAKKARAVARTHI ARJUNAN ,  DEEPIKA SINGH ,  WEI BAI

    IPC: B24B37/20 ,  C09G1/02 ,  C23F3/00

    CPC classification number: B24B37/20 ,  C09G1/02 ,  C09G1/04 ,  C23F3/00

    Abstract: A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size

    Abstract translation: CMP方法使用包含胶体金属氧化物或胶态半导体氧化物颗粒（胶体颗粒）在水中的浆料。 从（i）多分散性> 30％的胶体粒子中选择至少一种粒子特征，和（ii）包含具有平均初级粒径> 50nm的胶体粒子的混合粒子类型与平均一次粒径< 25nm。 将具有氧化铝表面的基板放入CMP设备中，并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。 多分散性通过多分散性公式确定，其分布宽度（w）涉及第二较大粒径的宽度w1和宽度w2。 多分散性公式=（w2-w1）×100 / dav，其含有体积和天数的胶体粒子的总量的63％是胶体粒子的平均粒径。

    CMP TOOL IMPLEMENTING CYCLIC SELF-LIMITING CM PROCESS
    7.
    发明申请
    CMP TOOL IMPLEMENTING CYCLIC SELF-LIMITING CM PROCESS 失效
    CMP工具实施循环自限制程序

    公开(公告)号：US20140000808A1

    公开(公告)日：2014-01-02

    申请号：US13932724

    申请日：2013-07-01

    Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. ,  SINMAT, INC.

    Inventor： RAJIV SINGH ,  DEEPIKA SINGH ,  ABHUDAYA MISHRA

    IPC: H01L21/77

    CPC classification number: H01L21/77 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

    Abstract: A chemical mechanical polishing (CMP) apparatus includes a process controller operable to execute a multi-step CMP algorithm implementing delivering a first chemical composition onto the wafer surface while on a platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first chemical composition onto the wafer surface for a second time duration. CMP is performed with a polishing pad contacting the wafer surface using a slurry including the first chemical composition during the first time duration or the second chemical composition during the second time duration, and a non-polishing process without any contact of the polishing pad to the wafer surface using the other of the first and second chemical composition during the other of the time durations, and repeating the multi-step CMP comprising process a plurality of times on the wafer.

    Abstract translation: 化学机械抛光（CMP）装置包括可操作以执行多步CMP算法的过程控制器，该多步骤CMP算法在第一时间段内在压板上将第一化学成分递送到晶片表面上，并且不从压板移除晶片， 将不同于第一化学成分的第二化学成分输送到晶片表面上持续第二时间。 使用在第一持续时间期间使用包含第一化学成分的浆料或在第二持续时间期间的第二化学成分的抛光垫与抛光垫接触的CMP进行CMP，以及不抛光抛光垫与第二化学成分接触的非抛光工艺 在另一个持续时间期间使用第一和第二化学成分中的另一个的晶片表面，并且重复在晶片上多次处理多步CMP。

    POLISHING OF HARD SUBSTRATES WITH SOFT-CORE COMPOSITE PARTICLES
    8.
    发明申请
    POLISHING OF HARD SUBSTRATES WITH SOFT-CORE COMPOSITE PARTICLES 有权
    硬质基材与软核复合颗粒的抛光

    公开(公告)号：US20160060488A1

    公开(公告)日：2016-03-03

    申请号：US14471755

    申请日：2014-08-28

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  ARUL CHAKKARAVARTHI ARJUNAN ,  KANNAN BALASUNDARAM ,  DEEPIKA SINGH ,  WEI BAI

    IPC: C09G1/04 ,  B24B37/04

    CPC classification number: C09G1/04 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C30B33/00 ,  H01L21/02002 ,  H01L21/02024 ,  H01L21/30625

    Abstract: A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particles have a Mohs hardness at least 1 greater than a Mohs hardness of the soft core particle and/or a Vickers hardness at least 500 Kg/mm2 greater than the soft-core particle. A substrate having a substrate surface with a hardness greater than a Mohs number of 6 or a Vickers hardness greater than 1,000 kg/mm2 is placed into a CMP apparatus having a rotating polishing pad, and CMP is performed with the rotating polishing pad and the slurry to polish the substrate surface.

    Abstract translation: 化学机械抛光（CMP）包括提供包括分散在水性载体中的复合颗粒的浆料，其包含在软核颗粒的外表面上的多个硬颗粒。 硬质颗粒具有比软核颗粒的莫氏硬度至少大1的莫氏硬度和/或比软核颗粒大至少500kg / mm 2的维氏硬度。 将具有大于莫氏数6的维氏硬度大于1000kg / mm2的基板表面的基板放置在具有旋转抛光垫的CMP设备中，并且用旋转抛光垫和浆料进行CMP 抛光衬底表面。

    PATTERNED ARTICLES AND LIGHT EMITTING DEVICES THEREFROM
    9.
    发明申请
    PATTERNED ARTICLES AND LIGHT EMITTING DEVICES THEREFROM 审中-公开
    图案的文字和发光装置

    公开(公告)号：US20140191243A1

    公开(公告)日：2014-07-10

    申请号：US13736372

    申请日：2013-01-08

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  PURUSHOTTAM KUMAR ,  DEEPIKA SINGH

    IPC: H01L33/60 ,  H01L21/02 ,  H01L33/00 ,  F21V5/00 ,  F21V7/22

    CPC classification number: H01L21/02518 ,  H01L33/007 ,  H01L33/10

    Abstract: A patterned article includes a substrate support having planar substrate surface portions including a substrate material having a substrate refractive index. A patterned surface is on the substrate support including a plurality of features lateral to the planar substrate surface portions protruding above a height of the planar substrate surface portions. At least a top surface of the plurality of features include an epi-blocking layer including at least one of (i) a non-single crystal material having a refractive index lower as compared to the substrate refractive index and (ii) a reflecting metal or a metal alloy (reflecting material). The epi-blocking layer is not on the planar substrate surface portions.

    Abstract translation: 图案化的制品包括具有平面衬底表面部分的衬底支撑件，其包括具有衬底折射率的衬底材料。 图案化表面在衬底支撑件上，包括在平面衬底表面部分的高度之上突出的平面衬底表面部分的侧面的多个特征。 多个特征的至少顶表面包括外延阻挡层，其包括以下中的至少一个：（i）与基板折射率相比折射率较低的非单晶材料和（ii）反射金属或 金属合金（反射材料）。 外阻挡层不在平面基板表面部分上。

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