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公开(公告)号：US12207556B2
公开(公告)日：2025-01-21
申请号：US16865227
申请日：2020-05-01
Applicant: SPTS Technologies Limited
Inventor： Adrian Thomas , Steve Burgess , Amit Rastogi , Tony Wilby , Scott Haymore
IPC: H03H3/08 , C01B21/06 , C23C14/00 , C23C14/02 , C23C14/06 , H03H3/02 , H03H9/02 , H03H9/17 , H10N30/045 , H10N30/076 , H10N30/082
Abstract: In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.
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公开(公告)号：US10153135B2
公开(公告)日：2018-12-11
申请号：US15190722
申请日：2016-06-23
Applicant: SPTS Technologies Limited
Inventor： Anthony Paul Wilby , Stephen R Burgess , Ian Moncrieff , Paul Densley , Clive L Widdicks , Paul Rich , Adrian Thomas
Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.
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Patent Agency Ranking
公开(公告)号：US20230136705A1
公开(公告)日：2023-05-04
申请号：US17976798
申请日：2022-10-29
Applicant: SPTS Technologies Limited
Inventor： Scott Haymore , Adrian Thomas , Tony Wilby , Stephen Burgess
Abstract: A substrate is positioned on a substrate supporting upper surface of a substrate support. An arrangement of permanent magnets is positioned beneath the substrate supporting upper surface so that permanent magnets are disposed underneath the substrate. The deposition material is deposited into the recesses formed in the substrate by sputtering a sputtering material from a target of a magnetron device. While depositing the deposition material, the arrangement of permanent magnets provides a substantially uniform lateral magnetic field across the surface of the substrate which extends into a region beyond a periphery of the substrate to enhance resputtering of deposited material deposited into the recesses.
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公开(公告)号：US20220085275A1
公开(公告)日：2022-03-17
申请号：US17461928
申请日：2021-08-30
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： Scott Haymore , Adrian Thomas , Tony Wilby
IPC: H01L41/316 , H01L41/08 , H01L41/187 , H01L41/319 , C23C14/06 , C23C14/00 , C01B21/06
Abstract: Pulsed DC reactive sputtering of a target deposits an additive-containing aluminium nitride film onto a metallic layer of a semiconductor substrate. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium, titanium, chromium, magnesium and hafnium. Depositing the additive-containing aluminium nitride film includes introducing a gaseous mixture comprising nitrogen gas and an inert gas into the chamber at a flow rate, in which the flow rate of the gaseous mixture comprises a nitrogen gas flow rate, and in which the nitrogen gas flow rate is less than or equal to about 50% of the flow rate of the gaseous mixture and also is sufficient to fully poison the target.
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公开(公告)号：US12043891B2
公开(公告)日：2024-07-23
申请号：US17196999
申请日：2021-03-09
Applicant: SPTS Technologies Limited
Inventor： Scott Haymore , Adrian Thomas , Steve Burgess
CPC classification number: C23C14/165 , C23C14/351 , H03H3/08 , H03H9/02047 , H03H9/02574 , H03H9/02614
Abstract: Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.
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公开(公告)号：US11913109B2
公开(公告)日：2024-02-27
申请号：US16541635
申请日：2019-08-15
Applicant: SPTS Technologies Limited
Inventor： Tony Wilby , Steve Burgess , Adrian Thomas , Rhonda Hyndman , Scott Haymore , Clive Widdicks , Ian Moncrieff
CPC classification number: C23C14/50 , C23C14/345 , C23C14/3485 , C23C14/35 , C23C14/351 , C23C14/505 , H01J37/32715 , H01J37/3405 , H01J37/3452 , H01J37/3455 , H01J37/3467 , C23C14/542
Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.
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公开(公告)号：US20210317565A1
公开(公告)日：2021-10-14
申请号：US17196999
申请日：2021-03-09
Applicant: SPTS Technologies Limited
Inventor： Scott Haymore , Adrian Thomas , Steve Burgess
Abstract: Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.
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