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公开(公告)号：US11971284B2
公开(公告)日：2024-04-30
申请号：US17204664
申请日：2021-03-17
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Gabriele Gattere , Francesco Rizzini , Luca Guerinoni , Lorenzo Corso , Domenico Giusti
IPC: G01F1/84
CPC classification number: G01F1/8472 , G01F1/8404
Abstract: Embodiments of a Coriolis-force-based flow sensing device and embodiments of methods for manufacturing embodiments of the Coriolis-force-based flow sensing device, comprising the steps of: forming a driving electrode; forming, on the driving electrode, a first sacrificial region; forming, on the first sacrificial region, a first structural portion with a second sacrificial region buried therein; forming openings for selectively etching the second sacrificial region; forming, within the openings, a porous layer having pores; removing the second sacrificial region through the pores of the porous layer, forming a buried channel; growing, on the porous layer and not within the buried channel, a second structural portion that forms, with the first structural region, a structural body; selectively removing the first sacrificial region thus suspending the structural body on the driving electrode.
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2.发明申请公开(公告)号：US20180342998A1
公开(公告)日：2018-11-29
申请号：US15976611
申请日：2018-05-10
Applicant: STMicroelectronics S.r.l.
Inventor： Gabriele Gattere , Lorenzo Corso , Alessandro Tocchio , Carlo Valzasina
CPC classification number: H03H9/02448 , H03H3/0076 , H03H9/02259 , H03H9/02338 , H03H9/2405 , H03H9/2431 , H03H9/2447 , H03H2009/02322 , H03H2009/02496
Abstract: A microelectromechanical device having a mobile structure including mobile arms formed from a composite material and having a fixed structure including fixed arms capacitively coupled to the mobile arms. The composite material includes core regions of insulating material and a silicon coating.
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公开(公告)号：US11945712B2
公开(公告)日：2024-04-02
申请号：US17320993
申请日：2021-05-14
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Lorenzo Corso , Ilaria Gelmi , Carlo Valzasina
CPC classification number: B81B3/0051 , B81C1/00595 , B81B2201/0235 , B81B2201/0242 , B81C2201/0198
Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.
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公开(公告)号：US10934158B2
公开(公告)日：2021-03-02
申请号：US16240415
申请日：2019-01-04
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Alessandro Tocchio , Lorenzo Corso
Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
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5.发明授权公开(公告)号：US09452922B2
公开(公告)日：2016-09-27
申请号：US13922033
申请日：2013-06-19
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Barbara Simoni , Carlo Valzasina , Lorenzo Corso
CPC classification number: B81B7/0074 , B81B7/007 , B81B7/008 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81B2207/093 , B81B2207/096 , B81B2207/097 , B81C1/0023 , B81C2203/0118 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.
Abstract translation: 微机电装置包括：容纳微机电结构的主体; 以及盖，其结合到主体并通过导电接合区域电耦合到微机电结构。 盖包括选择模块，其具有耦合到微机电结构的第一选择端子，第二选择端子和至少一个控制端子，并且可以通过控制端子控制以将第二选择端子耦合到相应的第一选择端子， 选择性地，对应于相应的操作条件的多个耦合配置之一。
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Patent Agency Ranking
6.发明授权公开(公告)号：US11855604B2
公开(公告)日：2023-12-26
申请号：US17031181
申请日：2020-09-24
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Federico Vercesi , Lorenzo Corso , Giorgio Allegato , Gabriele Gattere
CPC classification number: H03H9/1021 , B81B7/0038 , B81C1/00285 , H03H3/02 , H03H9/17 , B81B2201/0271 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0105 , B81C2203/0118 , H03H2003/022 , H03H2003/027 , H03H2009/155
Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.
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公开(公告)号：US11691870B2
公开(公告)日：2023-07-04
申请号：US17164546
申请日：2021-02-01
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Alessandro Tocchio , Lorenzo Corso
CPC classification number: B81B7/007 , B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81B2207/092 , B81B2207/096 , B81C2201/0132 , B81C2203/0118 , B81C2203/0136 , B81C2203/0771 , B81C2203/0792
Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
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公开(公告)号：US09718675B2
公开(公告)日：2017-08-01
申请号：US14971639
申请日：2015-12-16
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Barbara Simoni , Carlo Valzasina , Lorenzo Corso
CPC classification number: B81B7/0074 , B81B7/007 , B81B7/008 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81B2207/093 , B81B2207/096 , B81B2207/097 , B81C1/0023 , B81C2203/0118 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.
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9.发明申请公开(公告)号：US20140230546A1
公开(公告)日：2014-08-21
申请号：US13922033
申请日：2013-06-19
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Barbara Simoni , Carlo Valzasina , Lorenzo Corso
IPC: B81B7/00
CPC classification number: B81B7/0074 , B81B7/007 , B81B7/008 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81B2207/093 , B81B2207/096 , B81B2207/097 , B81C1/0023 , B81C2203/0118 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.
Abstract translation: 微机电装置包括：容纳微机电结构的主体; 以及盖，其结合到主体并通过导电接合区域电耦合到微机电结构。 盖包括选择模块，其具有耦合到微机电结构的第一选择端子，第二选择端子和至少一个控制端子，并且可以通过控制端子控制以将第二选择端子耦合到相应的第一选择端子， 选择性地，对应于相应的操作条件的多个耦合配置之一。
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公开(公告)号：US11667519B2
公开(公告)日：2023-06-06
申请号：US17164546
申请日：2021-02-01
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Alessandro Tocchio , Lorenzo Corso
CPC classification number: B81B7/007 , B81C1/00246 , B81B2201/0235 , B81B2201/0264 , B81B2207/092 , B81B2207/096 , B81C2201/0132 , B81C2203/0118 , B81C2203/0136 , B81C2203/0771 , B81C2203/0792
Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
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