公开(公告)号：US09293596B2

公开(公告)日：2016-03-22

申请号：US14642326

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wenxu Xianyu ,  Chang-youl Moon ,  Jeong-yub Lee ,  Chang-seung Lee

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/16

CPC classification number: H01L29/78684 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78603

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

公开(公告)号：US09142639B2

公开(公告)日：2015-09-22

申请号：US13975680

申请日：2013-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-sung Kim ,  Chang-seung Lee ,  Joo-ho Lee

IPC: H01L29/16 ,  H01L29/66 ,  B82Y10/00 ,  H01L21/28 ,  H01L29/423 ,  H01L29/778 ,  H01L29/788 ,  H01L27/115 ,  H01L29/78

CPC classification number: H01L29/66477 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28291 ,  H01L21/6835 ,  H01L27/11521 ,  H01L27/1159 ,  H01L29/1606 ,  H01L29/41775 ,  H01L29/42328 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/78391 ,  H01L29/7881 ,  H01L2221/68359 ,  H01L2221/68381

Abstract: A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure and a second gate structure on the graphene layer.

Abstract translation: 石墨烯电子器件包括：在中间层的第一区域上的第一导电层和半导体层; 在所述中间层的第二区域上的第二导电层; 中间层上的石墨烯层，半导体层和第二导电层; 以及石墨烯层上的第一栅极结构和第二栅极结构。

公开(公告)号：US09040958B2

公开(公告)日：2015-05-26

申请号：US13792525

申请日：2013-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-seung Lee ,  Yong-sung Kim ,  Joo-ho Lee ,  Yong-seok Jung

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78684 ,  H01L29/78696

Abstract: Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.

Abstract translation: 晶体管和制造晶体管的方法包括石墨烯和从石墨烯转化的材料。 晶体管可以包括包括石墨烯的沟道层和包括从石墨烯转换的材料的栅极绝缘层。 从石墨烯转化的材料可以是氟化石墨烯。 沟道层可以包括图案化的石墨烯区域。 图案化的石墨烯区域可以由从石墨烯转换的区域限定。 晶体管的栅极可以包括石墨烯。

公开(公告)号：US09030187B2

公开(公告)日：2015-05-12

申请号：US13856026

申请日：2013-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-seung Lee ,  Yong-sung Kim ,  Jeo-young Shim ,  Joo-ho Lee

IPC: G01N27/00 ,  G01R27/08 ,  G01N33/487 ,  B82Y15/00 ,  G01N15/12 ,  G01N27/327

CPC classification number: B82Y15/00 ,  G01N15/1227 ,  G01N27/3271 ,  G01N33/48721 ,  Y10S977/734 ,  Y10S977/938

Abstract: A nanogap device includes a first insulation layer having a nanopore formed therein, a first nanogap electrode which may be formed on the first insulation layer and may be divided into two parts with a nanogap interposed between the two parts, the nanogap facing the nanopore, a second insulation layer formed on the first nanogap electrode, a first graphene layer formed on the second insulation layer, a first semiconductor layer formed on the first graphene layer, a first drain electrode formed on the first semiconductor layer, and a first source electrode formed on the first graphene layer such as to be apart from the first semiconductor layer.

Abstract translation: 纳米测距装置包括其中形成有纳米孔的第一绝缘层，可以形成在第一绝缘层上的第一纳米隙电极，并且可以被分成两部分，其间插入两个部分之间的纳米隙，面对纳米孔的纳米孔， 形成在第一绝缘层上的第二绝缘层，形成在第二绝缘层上的第一石墨烯层，形成在第一石墨烯层上的第一半导体层，形成在第一半导体层上的第一漏电极和形成在第一绝缘层上的第一源电极， 第一石墨烯层，以便与第一半导体层分开。

公开(公告)号：US09540234B2

公开(公告)日：2017-01-10

申请号：US13855991

申请日：2013-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-seung Lee ,  Yong-sung Kim ,  Jeo-young Shim ,  Joo-ho Lee

IPC: G01N33/487 ,  B82Y15/00 ,  B82Y99/00

CPC classification number: B82Y15/00 ,  B82Y99/00 ,  G01N33/48721

Abstract: A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.

Abstract translation: 可以包括其中形成有纳米孔的第一绝缘层的纳米隙装置，可以在第一绝缘层上的第一沟道层，可以分别与第一绝缘层的第二绝缘层 沟道层，可以覆盖第一沟道层的第二绝缘层，第一源电极和第一漏电极，以及可以在第二绝缘层上并且可以被纳米隙分成两部分的第一纳米隙电极， 其面对纳米孔，介于两部分之间。

公开(公告)号：US09196478B2

公开(公告)日：2015-11-24

申请号：US14268053

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Yong-sung Kim ,  Chang-youl Moon ,  Sung-hee Lee ,  Chang-seung Lee

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L21/20

CPC classification number: H01L21/02527 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/2007 ,  H01L29/1606 ,  H01L29/66015

Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Abstract translation: 石墨烯转移方法，使用其的器件制造方法和包括石墨烯的衬底结构包括在第一衬底上形成催化剂层，在催化剂层上形成石墨烯层，在石墨烯层上形成保护金属层， 将保护金属层，石墨烯层和催化剂层保留在支撑体上，从支撑体除去催化剂层，将保护金属层和保护金属层转移到保护金属层， 石墨烯层从支撑体到第二基底。

公开(公告)号：US08932941B2

公开(公告)日：2015-01-13

申请号：US13856022

申请日：2013-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Tae-han Jeon ,  Yong-sung Kim ,  Chang-seung Lee ,  Yong-seok Jung

IPC: H01L21/20 ,  H01L21/36 ,  H01L29/16 ,  H01L21/02 ,  B82Y40/00

CPC classification number: H01L29/1606 ,  B82Y40/00 ,  H01L21/02527 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78684 ,  Y10S977/734

Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

Abstract translation: 制造石墨烯装置的方法包括在基板上形成绝缘材料层，在彼此间隔开的绝缘材料层上形成第一和第二金属焊盘，形成石墨烯层，该石墨烯层被定义为第一和第 在所述绝缘材料层上的第二金属焊盘，在所述石墨烯层上形成第三和第四金属焊盘，所述第二金属焊盘与所述第一金属焊盘和所述第二金属焊盘分别在所述第一金属焊盘和所述第二金属焊盘之上分别延伸， 形成第一保护层以覆盖所有第一和第二金属焊盘，石墨烯层以及第三和第四金属焊盘，并且蚀刻第一保护层的整个表面，直到仅由形成第一和第二金属焊盘的材料制成的残留层 保护层保留在有效区域上。

公开(公告)号：US08877572B2

公开(公告)日：2014-11-04

申请号：US13790534

申请日：2013-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Yong-seok Jung ,  Yong-sung Kim ,  Chang-seung Lee ,  Chang-youl Moon

IPC: H01L29/66 ,  C25D17/00 ,  C01B31/02 ,  C25B9/00 ,  C25F7/00 ,  C25B1/00 ,  C25F5/00 ,  B82Y40/00

CPC classification number: H01L29/66045 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/05 ,  C01B32/186 ,  C25B1/00 ,  C25B9/00 ,  C25D17/00 ,  C25F5/00 ,  C25F7/00

Abstract: A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Abstract translation: 石墨烯装置制造装置包括电极，在基板上形成有金属催化剂层的石墨烯结构，保护层和保护层与金属催化剂层之间的石墨烯层，功率单元，被配置为在保护层和金属催化剂层之间施加电压 电极和金属催化剂层，以及其中石墨烯结构至少部分浸没的电解质。

公开(公告)号：US08742400B2

公开(公告)日：2014-06-03

申请号：US13861726

申请日：2013-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： David Seo ,  Sang-wook Kim ,  Seong-jun Park ,  Young-jun Yun ,  Yung-hee Yvette Lee ,  Chang-seung Lee

IPC: H01L29/06

CPC classification number: H01L29/775 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/42376 ,  H01L29/7781 ,  H01L29/7789

Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.

Abstract translation: 石墨烯开关装置在半导体衬底的第一和第二区域中分别包括第一电极和绝缘层，在第一和第二区域之间的半导体衬底的表面上的多个金属颗粒，多个 金属颗粒并在绝缘层上延伸，在第二区域中的石墨烯层上的第二电极，并且被配置为面对绝缘层，构造成覆盖石墨烯层的栅极绝缘层和栅极绝缘层上的栅电极。 半导体衬底在石墨烯层和第一电极之间形成能量势垒。

公开(公告)号：US09214559B2

公开(公告)日：2015-12-15

申请号：US13659131

申请日：2012-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho Lee ,  Chang-seung Lee ,  Yong-sung Kim ,  Hyun-jae Song

IPC: B29C65/52 ,  B29C65/54 ,  B32B37/26 ,  B32B38/10 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/16

CPC classification number: H01L29/78603 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78684 ,  Y10T428/24917

Abstract: Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer.

Abstract translation: 石墨烯转移剂，石墨烯转移剂，转移石墨烯的方法以及制造石墨烯装置的方法可以包括金属薄膜层图案和依次层叠在粘合剂构件上的石墨烯层。 金属薄膜层和石墨烯层可以具有相同的形状。 在制造石墨烯装置期间将石墨烯层转印到转印对象基板上之后，通过去除金属薄膜层的一部分，对金属薄膜层进行图案化以在石墨烯层的各个端部上形成电极。