公开(公告)号：US20160099378A1

公开(公告)日：2016-04-07

申请号：US14714223

申请日：2015-05-15

申请人： Sang Heon HAN ,  Dong Yul LEE ,  Seung Hyun KIM ,  Jang Mi KIM ,  Suk Ho YOON ,  Sang Jun LEE

发明人： Sang Heon HAN ,  Dong Yul LEE ,  Seung Hyun KIM ,  Jang Mi KIM ,  Suk Ho YOON ,  Sang Jun LEE

IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/06

CPC分类号： H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

摘要翻译： 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。

公开(公告)号：US20150311062A1

公开(公告)日：2015-10-29

申请号：US14578940

申请日：2014-12-22

申请人： Dong Yul LEE ,  Sang Heon HAN ,  Seung Hyun KIM ,  Jang Mi KIM ,  William SOLARI ,  Hyun Wook SHIM ,  Suk Ho YOON

发明人： Dong Yul LEE ,  Sang Heon HAN ,  Seung Hyun KIM ,  Jang Mi KIM ,  William SOLARI ,  Hyun Wook SHIM ,  Suk Ho YOON

IPC分类号： H01L21/02 ,  H01L33/00

CPC分类号： H01L21/0254 ,  C23C16/34 ,  C23C16/4404 ,  H01L21/02107 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02496 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

摘要翻译： 一种制造半导体器件的方法包括通过向处理室提供铝（Al）源，与处理室中的铝源接触的表面，在处理室的表面上形成铝化合物膜; 在形成铝化合物膜之后，在设置在处理室中的基座上设置晶片; 并在晶片上形成用于半导体器件的薄膜。

公开(公告)号：US20130026446A1

公开(公告)日：2013-01-31

申请号：US13557915

申请日：2012-07-25

申请人： Sang Heon HAN ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Sang Heon HAN ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04 ,  H01L33/60

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。

公开(公告)号：US20120160157A1

公开(公告)日：2012-06-28

申请号：US13208639

申请日：2011-08-12

申请人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

发明人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

IPC分类号： C30B25/02 ,  C30B25/08

CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/325

摘要： There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.

摘要翻译： 提供一种制造发光二极管的方法，该方法包括：在第一反应室中在衬底上生长第一导电型氮化物半导体层和有源层; 将具有第一导电型氮化物半导体层的基板和其上生长的活性层转移到第二反应室; 以及在所述第二反应室中的所述有源层上生长第二导电型氮化物半导体层，其中在所述第二导电型氮化物半导体层中产生包含氮化物源气体和供给掺杂剂的掺杂剂源气体的气氛 在将基板转移到第二反应室之前，第二反应室的内部。 该方法提高了系统的运行能力和生产率。 此外，可以提高通过该方法获得的半导体层的结晶度和掺杂均匀性。

公开(公告)号：US20110121259A1

公开(公告)日：2011-05-26

申请号：US12902233

申请日：2010-10-12

申请人： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

发明人： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

摘要翻译： 提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。