METHOD OF MANUFACTURING LIGHT EMITTING DIODE
    4.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DIODE 审中-公开
    制造发光二极管的方法

    公开(公告)号:US20120160157A1

    公开(公告)日:2012-06-28

    申请号:US13208639

    申请日:2011-08-12

    IPC分类号: C30B25/02 C30B25/08

    摘要: There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.

    摘要翻译: 提供一种制造发光二极管的方法,该方法包括:在第一反应室中在衬底上生长第一导电型氮化物半导体层和有源层; 将具有第一导电型氮化物半导体层的基板和其上生长的活性层转移到第二反应室; 以及在所述第二反应室中的所述有源层上生长第二导电型氮化物半导体层,其中在所述第二导电型氮化物半导体层中产生包含氮化物源气体和供给掺杂剂的掺杂剂源气体的气氛 在将基板转移到第二反应室之前,第二反应室的内部。 该方法提高了系统的运行能力和生产率。 此外,可以提高通过该方法获得的半导体层的结晶度和掺杂均匀性。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    氮化物半导体发光器件

    公开(公告)号:US20110121259A1

    公开(公告)日:2011-05-26

    申请号:US12902233

    申请日:2010-10-12

    IPC分类号: H01L33/04

    CPC分类号: H01L33/06 H01L33/32

    摘要: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

    摘要翻译: 提供一种氮化物半导体发光器件,其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。